BS616LV4016AIG70 - Brilliance Semiconductor, Inc.

Revision 1.1

Jan. 2004

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

A17

A16

A15

A14

A13

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

A12

BS616LV4016EC

BS616LV4016EI

R0201-BS616LV4016

POWER DISSIPATION

SPEED

( ns ) STANDBY

( I CCSB1 , Max ) ( I CC , Max )

PRODUCT FAMILY OPERATING

TEMPERATURE

Vcc

RANGE

3.0V 3.0V

PKG TYPE

BS616LV4016DC DICE

BS616LV4016EC TSOP2-44

BS616LV4016AC BGA-48-0608

+0 O C to +70O C2.4V ~ 3.6V 55 / 70 6.0uA 25mA

BS616LV4016DI DICE

BS616LV4016EI TSOP2-44

BS616LV4016AI BGA-48-0608

-40 O C to +85O

C2.4V ~ 3.6V 55 / 70 8.0uA 27mA

Very Low Power/Voltage CMOS SRAM

256K X 16 bit

• Wide Vcc operation voltage : 2.4V ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 25mA (@55ns) operating current

I -grade: 27mA (@55ns) operating current

C-grade: 17mA (@70ns) operating current

I -grade: 18mA (@70ns) operating current

0.45uA (Typ.) CMOS standby current

• High speed access time :

-55 55ns (Max.) at Vcc = 2.7~3.6V / 85oC

-70 70ns (Max.) at Vcc = 2.4~3.6V / 85oC

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

The BS616LV4016 is a high performance, very low power CMOS Static

Random Access Memory organized as 262,144 words by 16 bits and

operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.45uA at 3.0V/25oCand maximum access time of 55ns at 2.7V/85oC.

Easy memory expansion is provided by an active LOW chip enable (CE)

,active LOW output enable(OE) and three-state output drivers.

The BS616LV4016 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV4016 is available in DICE form , JEDEC standard 44-pin

TSOP Type II package and 48-ball BGA package.

DESCRIPTION

FEATURES

Row

Decoder

Memory Array

2048 x 2048

Column I/O

Write Driver

Sense Amp

Column Decoder

Data

Buffer

Output

A9 A8 A7

Data

Buffer

Input

Control

Gnd

Vcc

DQ15

DQ0

A13

A14

A15

128

2048

BLOCK DIAGRAM

2048

A17

A16

A10

A12

A11

Address

Input

Buffer

Address Input Buffer

PRODUCT FAMILY

PIN CONFIGURATIONS

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

BS616LV4016

BSI

Operating

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

Vcc = Vcc =

17mA

18mA

55ns 70ns

55ns: 2.7~3.6V

70ns: 2.4~3.6V

Revision 1.1

Jan. 2004

R0201-BS616LV4016

Name Function

A0-A17 Address Input These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.

CE Chip Enable Input CE is active LOW. Chip enables must be active when data read from or write to the

device. if chip enable is not active, the device is deselected and is in a standby power

mode. The DQ pins will be in the high impedance state when the device is deselected.

WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the

chip selected, when WE is HIGH and OE is LOW, output data will be present on the

DQ pins; when WE is LOW, the data present on the DQ pins will be written into the

selected memory location.

OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is

selected and the write enable is inactive, data will be present on the DQ pins and they

will be enabled. The DQ pins will be in the high impedance state when OE is inactive.

LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins.

DQ0 - DQ15 Data Input/Output

Ports

These 16 bi-directional ports are used to read data from or write data into the RAM.

Vcc Power Supply

Gnd Ground

TRUTH TABLE

PIN DESCRIPTIONS

BSI BS616LV4016

MODE CE WE OE LB UB D0~D7 D8~D15 Vcc CURRENT

HX X X X High Z High Z ICCSB , ICCSB1

Not selected

(Power Down) X X X H H High Z High Z ICCSB , ICCSB1

Output Disabled LH H X X High Z High Z ICC

L L Dout Dout ICC

H L High Z Dout ICC

Read L H L

L H Dout High Z ICC

LL Din Din I

HL X Din I

Write L L X

LH Din X I

LXXHHHigh Z High Z ICC

Revision 1.1

Jan. 2004

CIN Input

Capacitance VIN=0V 6 pF

CDQ Input/Output

Capacitance VI/O=0V 8 pF

RANGE AMBIENT

TEMPERATURE Vcc

Commercial 0 O C to +70 O C2.4V ~ 3.6V

Industrial -40 O C to +85 O C2.4V ~ 3.6V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

4. IccSB1_max. is 6uA @Vcc=3.0V during 0oC~70oC.

5. Icc_Max. is 25mA(@55ns) / 17mA(@70ns) at Vcc=3.0V/ 0~70oC.

ABSOLUTE MAXIMUM RATINGS(1) OPERATING RANGE

CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

1. This parameter is guaranteed and not 100% tested.

DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )

SYMBOL PARAMETER RATING UNITS

TERM Terminal Voltage with

Respect to GND

-0.5 to

Vcc+0.5 V

BIAS Temperature Under Bias -40 to +85 O C

STG Storage Temperature -60 to +150 O C

T Power Dissipation 1.0 W

OUT DC Output Current 20 mA

BSI BS616LV4016

PARAMETER

NAME PARAMETER TEST CONDITIONS MIN. TYP.(1)MAX. UNITS

VIL Guaranteed Input Low

Voltage (2) -0.3 -- V

VIH Guaranteed Input High

Voltage (2) -- Vcc+0.3 V

IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA

ILO Output Leakage Current Vcc = Max, CE = V IH , or OE = VIH

VI/O = 0V to Vcc -- -- 1 uA

VOL Output Low Voltage -- -- V

VOH Output High Voltage -- -- V

ICC Operating Power

Supply Current

CE=VIL ,IDQ= 0mA,

F=Fmax (3) -- -- mA

ICCSB Standby Current-TTL CE = V IH, I DQ= 0mA -- -- mA

ICCSB1 Standby Current-CMOS CE ≧Vcc-0.2V,

VIN ≧Vcc - 0.2V or VIN ≦0.2V -- uA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R0201-BS616LV4016

0.45 8

Vcc=3.0V

Vcc=3.0V 2.0

Vcc=3.0V

0.8

2.4

1.0

0.4

Vcc = Max, I OL = 2.0mA

Vcc = Min, IOH = -1.0mA

(4)

70ns

55ns 27

(5)

Revision 1.1

Jan. 2004

BSI BS616LV4016

SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS

VDR Vcc for Data Retention CE ≧Vcc - 0.2V

VIN ≧Vcc - 0.2V or VIN ≦0.2V 1.5 -- -- V

ICCDR Data Retention Current CE ≧Vcc - 0.2V

VIN ≧Vcc - 0.2V or VIN ≦0.2V -- 0.15 1.7 uA

tCDR

Chip Deselect to Data

Retention Time 0---- ns

tROperation Recovery Time

See Retention Waveform

TRC (2) -- -- ns

DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

1. Vcc = 1.5V,T

A= + 25OC

2. tRC = Read Cycle Time

3. IccDR(Max.) is 1.2uA at TA=70OC.

R0201-BS616LV4016

LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )

Data Retention Mode

Vcc

tCDR

Vcc

VIHVIH

Vcc VDR 1.5V

≥

CE Vcc - 0.2V

≥

(3)

Revision 1.1

Jan. 2004

R0201-BS616LV4016

AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )

READ CYCLE

AC TEST CONDITIONS

(Test Load and Input/Output Reference)

KEY TO SWITCHING WAVEFORMS

WAVEFORM INPUTS OUTPUTS

MUST BE

STEADY

MAY CHANGE

FROM H TO L

DON T CARE:

ANY CHANGE

PERMITTED

DOES NOT

APPLY

MUST BE

STEADY

WILL BE

CHANGE

FROM H TO L

CHANGE :

STATE

UNKNOWN

CENTER

LINE IS HIGH

IMPEDANCE

”OFF ”STATE

MAY CHANGE

FROM L TO H

WILL BE

CHANGE

FROM L TO H

BSI BS616LV4016

Input Pulse Levels

Vcc / 0V

Input Rise and Fall Times

1V/ns

Input and Output

Timing Reference Level

0.5Vcc

Output Load

CL = 30pF+1TTL

CL = 100pF+1TTL

JEDEC

PARAMETER

NAME

PARAMETER

NAME DESCRIPTION

CYCLE TIME : 55ns

(Vcc = 2.7~3.6V) (Vcc = 2.4~3.6V) UNIT

tAVAX tRC Read Cycle Time 55 -- -- 70 -- -- ns

tAVQV tAA Address Access Time -- -- 55 -- -- 70 ns

tELQV tACS Chip Select Access Time -- -- 55 -- -- 70 ns

tBA tBA Data Byte Control Access Time (LB,UB)----30----35 ns

tGLQV tOE Output Enable to Output Valid -- -- 30 -- -- 35 ns

tE1LQX tCLZ Chip Select to Output Low Z 10 -- -- 10 -- -- ns

tBE tBE Data Byte Control to Output Low Z (LB,UB)10----10---- ns

tGLQX tOLZ Output Enable to Output in Low Z 5----5---- ns

tEHQZ tCHZ Chip Deselect to Output in High Z -- -- 30 -- -- 35 ns

tBDO tBDO Data Byte Control to Output High Z (LB,UB) -- -- 30 -- -- 35 ns

tGHQZ tOHZ Output Disable to Output in High Z -- -- 25 -- -- 30 ns

tAXOX tOH Data Hold from Address Change 10 -- -- 10 -- -- ns

(1)

NOTE :

MIN. TYP. MAX. MIN. TYP. MAX.

1. tBA is 30ns/35ns (@speed=55ns/70ns) with address toggle. ; tBA is 55ns/70ns (@speed=55ns/70ns) without address toggle.

CYCLE TIME : 70ns

Revision 1.1

Jan. 2004

R0201-BS616LV4016

BSI BS616LV4016

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL.

3. Address valid prior to or coincident with CE transition low.

4. OE = VIL .

5. The parameter is guaranteed but not 100% tested.

t OH

READ CYCLE3 (1,4)

tRC

t OE

D OUT

LB,UB

ADDRESS

t CLZ

tACS

t CHZ

(1,5)

t OHZ

t OLZ

tAA

READ CYCLE2 (1,3,4)

tCLZ

tCHZ

D OUT

LB,UB

t BA

t ACS

t BE t BDO

t BDO

t BA

t BE

(5)

SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE1 (1,2,4)

t RC

t OH

t AA

DOUT

ADDRESS

t OH

Revision 1.1

Jan. 2004

R0201-BS616LV4016

BSI BS616LV4016

SWITCHING WAVEFORMS (WRITE CYCLE)

t WR

WRITE CYCLE1 (1)

t WC

(3)

t CW

(10)

t BW

(2)

t WP

t AW

t OHZ

(4,11)

t AS

(3)

t DH

t DW

DIN

D OUT

LB,UB

ADDRESS

(5)

AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )

JEDEC

PARAMETER

NAME

PARAMETER

NAME DESCRIPTION

CYCLE TIME : 55ns

(Vcc = 2.7~3.6V) (Vcc = 2.4~3.6V) UNIT

tAVAX tWC Write Cycle Time 55 -- -- 70 -- -- ns

tE1LWH tCW Chip Select to End of Write 55 -- -- 70 -- -- ns

tAVWL tAS Address Setup Time 0 -- -- 0 -- -- ns

tAVWH tAW Address Valid to End of Write 55 -- -- 70 -- -- ns

tWLWH tWP Write Pulse Width 30 -- -- 35 -- -- ns

tWHAX tWR Write recovery Time (CE,WE) 0 -- -- 0 -- -- ns

tBW tBW Date Byte Control to End of Write (LB,UB) 25 -- -- 30 -- -- ns

tWLQZ tWHZ Write to Output in High Z -- -- 25 -- -- 30 ns

tDVWH tDW Data to Write Time Overlap 25 -- -- 30 -- -- ns

tWHDX tDH Data Hold from Write Time 0 -- -- 0 -- -- ns

tGHQZ tOHZ Output Disable to Output in High Z -- -- 25 -- -- 30 ns

tWHOX tOW End of Write to Output Active 5 -- -- 5 -- -- ns

WRITE CYCLE

1. tBW is 25ns/30ns (@speed=55ns/70ns) with address toggle. ; tBW is 55ns/70ns (@speed=55ns/70ns) without address toggle.

(1)

NOTE :

MIN. TYP. MAX. MIN. TYP. MAX.

CYCLE TIME : 70ns

Revision 1.1

Jan. 2004

R0201-BS616LV4016

WRITE CYCLE2 (1,6)

BSI BS616LV4016

t WC

t CW

(10)

(2)

t WP

t AW

t WHZ

(4,11)

t AS

t WR

(3)

t DH

t DW

DIN

D OUT

ADDRESS

(5)

t OW (7) (8)

(8,9)

t BW

LB,UB

NOTES:

1. WE must be high during address transitions.

2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals

must be active to initiate a write and any one signal can terminate a write by going inactive.

The data input setup and hold timing should be referenced to the second transition edge of

the signal that terminates the write.

3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.

4. During this period, DQ pins are in the output state so that the input signals of opposite phase

to the outputs must not be applied.

5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE

transition, output remain in a high impedance state.

6. OE is continuously low (OE = VIL ).

7. DOUT is the same phase of write data of this write cycle.

8. DOUT is the read data of next address.

9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of

opposite phase to the outputs must not be applied to them.

10. TCW is measured from the later of CE going low to the end of write.

11. The parameter is guaranteed but not 100% tested.

Revision 1.1

Jan. 2004

R0201-BS616LV4016

ORDERING INFORMATION

BSI BS616LV4016

PACKAGE DIMENSIONS

TSOP2-44

Note:

BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products

for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support

systems and critical medical instruments.

BS616LV4016 X X ZY Y

GRADE

C: +0oC ~ +70oC

I: -40oC ~ +85oC

SPEED

55: 55ns

70: 70ns

PKG MATERIAL

-: Normal

G: Green

P: Pb free

PACKAGE

E: TSOP2-44

A: BGA-48-0608

D: DICE

Revision 1.1

Jan. 2004

BS616LV4016

BSI

R0201-BS616LV4016

PACKAGE DIMENSIONS (continued)

48 mini-BGA (6 x 8mm)

E0.1

3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.

1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.

2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.

N ED

NOTES:

48 8.0 6.0

E1D1

3.755.25

SIDE VIEW

D0.1

1.4 Max.

0.25 ±0.05

SOLDER BALL 0.35±0.05

VIEW A