S G S=THOMSON 7ac D B rse9237 oo07750 8 I 7 _ _ K 78C OT750_ oD Be peg ee ST TYF505+TYF 6005 sang itis FAST SWITCHING THYRISTORS . a THYRISTORS RAPIDES 7: as-/3 a a eeceee 5, ane os =e =. tTinms) = A/T, = 76C e High frequency applications. VoRM @ VoRM = YRRM up te 600 V. 10V< = <600V @ Glass passivated chip - High stability and reliability. . VRRM @ Available in uninsulated version: TYF series or in tg < 15n8 insulated : TXF series (Insulating voltage 2500 Vrms). e@ Applications hautes frquences. Case . VpRM = VaRMiusqua 600 V. Boitier TO 220 AB (CB-415) plastic @ Pastille glassive - Grande stabilit des caractristiques. @ Disponible en version non isole : srie TYF ou isole : srie TXF (tension d'isolement 2500 Veff). ABSOLUTE RATINGS (LIMITING VALUES) : VALEURS LIMITES ABSOLUES D'UTILISATION Symbol Value - Unit RMS on-state current* ITIRMS) 5 A Courant efficace a I'tat passant* . @T,. = 75C Mean on-state current* IT(AV) 3 A Courant moyen 4 l'tat passant* @T, = 75C Non repetitive surge peak on-state current** ITSM 52,5(t = 8,3 ms) A Courant non rptitif de surcharge crte ITSM 50 (t= 10 ms) A accidentelle 4 Itat passant* @T; < 100C 12t for fusing (2t 12,5(t = 10 ms} As Valeur de la constante 2t @ Tj < 100C Critical rate of rise of on-state current*** . * Vitesse critique de croissance du courant a Itat passant*** di/dt 100 Alus Storage and operating junction temperatures Tempratures extrmes de stockage et de Tetg ~~ an + 128 oc | fonction en fonctionnement J 40, + i @Tj = 100C TYF 505 TYF 1005 TYF 2005 TYF 3005 TYF 4005 TYF 5005 TYF 6005 VpRM = Varo (V) 50 100 200 300 400 500 600 Thermal resistances . Rsistances thermiques Symbol Value Unit Junction to case for D.C. . Jonction-boltier en continu Rehtj-c) 3,08 ecrw Junction to ambient - Jonetion-ambiante Rthij-a) 60 crw *Single phase circuit, 180 conduction angle **Half-sine wave *Gircuit monophas, angle de conduction 180 **Demi-onde sinusoldale ***Gate supply 20 V/20 Q - tr <0,1 ps - Half sine wave of 6,3 ps Gnrateur de gachette Demi-sinusoide May 1984 - 1/4 THOMSON SEMICONDUCTORS . | 45, avenue de l'Europe - 78140 VELIZY - France f \ THOMSON Tl. : 946.97.19 / Tlex : 698 866 F 187 @ COMPONENTSSG S-THONSON 7ac D ff 7s29237 ooor7sa TD ; TYF605 > TYF 6005 . 78C O7751 D GATE CHARACTERISTICS (Maximum values) /- 2$~/, 3 CARACTERISTIQUES DE GACHETTE (Valeurs meximates) Pom = 50W It = 10 4s) IFGM = 2A (t= 10n8) VaGcM = 5V Patav) = 1W VFGM = 16 Vit = 10 4s) ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES Value Symbol Unit Test conditions min tye max let 40 mA Tj = 26C Vp = 12V Ry = 3329 tp > 20 ps VeT 3 v T= 26C Vp = 12V RL = 332 tp #20 ps Vep 0,2 Vv Tj = 100C Vp = VDRM RL = 3,3 kQ Iq 30 mA T= 25C tt = 100 mA Gate open VIM 2,5 Vv T= 26C Itm = 5A tp = 10 ms IDRM 0,5 2 mA Tj = 100C VorM specified IRRM 0,5 2 mA Tj = 100C VARM specified Tj = 25C T=5A Vp = VDRM tat 1 Hs i= 80mA _dig/dt = 1A/ps 15 5 T = 100C if=10A VR = 50V Vp = 0,67 VoRM q B dip/dt = 30A/us dv/dt = 20 V/us Gate open dv/dt* 200 Vins Tj = 100C Linear slope up to 0,67 VpRM specified *For higher quaranted values, please consult us. CASE DESCRIPTION DESCRIPTION DU BOITIER @ 3,55 min 5 max 10,66 max * So 1 E -F Sake | olE =. E | & : 2 | 15 5 : SIE E | | | E x! Cooling method : by conduction (method C) o Hil a Marking : type number Obeid |: = o Weight: 2 g i Us 2,54 2,54 KAG TO 220 AB {CB-415} plastic 2/4 THOMSON SEMICONDUCTORS 188S G S-THOMSON 7ac D Bf 229237 aoo77se 1 TYE 505 > TYF ONS ________- T8C 07752 D 7-25-/3 \ie} Zth & 403 400 402 40 50 4 t (s)} 4074 0 40 4 4 4o-2 4074 4 40 402 403 Fig.4 - Energy per pulse for sinusoidal Fig.2 - Thermal transient impedance junc- pulses. tion to case and junction to ambient versus pulse duration. r Itsu_ (A) I initial < 100C 50 T; initial < tp 40 30 20 200 TS4 Ty initial < 100C 10 % -- rt Number of cycles 4 40 409 100 0 Fig.3 - Non repetitive surge peak on-state current versus number of cycles. Igq {T4] T] 40 2 t (ms) 2 1 2 5 40 Fig.4 - Non repetitive surge peak 1 Ts (C) on-state current for a sinusoidal pulse with width: t <40 ms, and ~40 ~20 9 +25 2 corresponding value of It. Fig.5 Relative variation of gate trigger current and holding current versus junction temperature. 3/4 THOMSON SEMICONDUCTORS 189S G S-THOMSON 4/4 TYF 505> TVF 6005 mame 780 OTT5SS 50 Itm (A) 7- 2S: S3 Ity (A 5 aM IA) @ Ty = 100C Vio = 2-24 V 4 ry = .039 4 [| r / Ty initial = asc / 3 400 A ( / 4 | [ ' i Vim) 0 2.2 2.3 2.4 2.5 Fig.6 On-state characteristics at low level (maximum values) . THOMSON SEMICONDUCTORS Ty initial = 25C 100C <== 10 ' Voy (VI 2 25 3 43.5 4 45 & 5 Fig.7 ~ On-state characteristics at high level (maximum values) . D