DATA SH EET
Product specification
Supersedes data of 1997 Mar 14 1999 Apr 15
DISCRETE SEMICONDUCTORS
BCX70 series
NPN general purpose transistors
o
k, halfpage
M3D088
1999 Apr 15 2
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER MARKING CODE(1)
BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 45 V
VCEO collector-emitter voltage open base 45 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1999 Apr 15 3
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =45V −−20 nA
IE= 0; VCB = 45 V; Tamb = 150 °C−−20 µA
IEBO emitter cut-off current IC= 0; VEB =4V −−20 nA
hFE DC current gain IC=10µA; VCE =5V
BCX70G −−−
BCX70H 40 −−
BCX70J 30 −−
BCX70K 100 −−
DC current gain IC= 2 mA; VCE =5V
BCX70G 120 220
BCX70H 180 310
BCX70J 250 460
BCX70K 380 630
DC current gain IC= 50 mA; VCE =1V
BCX70G 50 −−
BCX70H 70 −−
BCX70J 90 −−
BCX70K 100 −−
V
CEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.25 mA 50 350 mV
IC= 50 mA; IB= 1.25 mA 100 550 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.25 mA 600 850 mV
IC= 50 mA; IB= 1.25 mA 700 1050 mV
VBE base-emitter voltage IC=10µA; VCE =5V 520 mV
IC= 2 mA; VCE = 5 V 550 650 750 mV
IC= 50 mA; VCE =1V 780 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz 1.7 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz 11 pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz;
note 1 100 250 MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2k;
f = 1 kHz; B = 200 Hz 26dB
1999 Apr 15 4
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 Apr 15 5
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 15 6
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
NOTES
1999 Apr 15 7
Philips Semiconductors Product specification
NPN general purpose transistors BCX70 series
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 15 Document order number: 9397 750 05658