A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
ICBO VCB = 8 V 100 nA
IEBO VEB = 1.0 V 1.0 µ
µµ
µA
hFE VCE = 8.0 V IC = 7.0 mA 50 250 ---
CCB VCB = 10 V 0.6 pF
ft VCE = 10 V IC = 20 mA f = 1.0 GHz 8.0 8.5 GHz
S212 VCE = 8 V IC = 20 mA f = 2.0 GHz 10 11 dB
NF
GA VCE = 8 V IC = 10 mA f = 2.0 GHz
10 1.6
11 2.5 dB
NPN SILICON LOW NOISE RF TRANSISTOR
ALN64535
DESCRIPTION:
The ALN64535 is a Common Emitt er
Device Designed for Low Noise Class
A Amplif ier Applications up to 4.0 GHz.
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
•
S21
2 = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package
MAXIMUM RATINGS
IC 60 mA
VCBO 25 V
VCEO 12 V
VEBO 1.5 V
PDISS 300 mW @ T A ≤ 75 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 85 OC/W
PACKAGE STYLE SS35
1 = Base 2 & 4 = Emitter 3 = Collector
