Parameter Min. Typ. Max Units
RθJA Maximum Junction-to-Ambient ––– ––– 62.5 °C/W
HEXFET® Power MOSFET
PD - 9.871B
lAdavanced Process Technology
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7101
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.5
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 2.3
IDM Pulsed Drain Current 14
PD @TC = 25°C Power Dissipation 2.0
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150
Sodering Temperature, for 10 seconds 300(1.6mm from case)
Absolute Maximum Ratings
A
VDSS = 20V
RDS(on) = 0.10Ω
ID = 3.5A
8/25/97
Thermal Resistance Ratings
W
°C
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IRF7101
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.10 VGS = 10V, ID = 1.8A
––– ––– 0.15 VGS = 4.5V, ID = 1.0A
VGS(th) Gate Threshold Voltage 1. 0 – –– 3. 0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.1 ––– ––– S VDS = 15V, ID = 3.5A
––– ––– 2.0 VDS = 20V, V GS = 0V
––– ––– 250 VDS = 16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 12V
QgTotal Gate Charge ––– ––– 15 ID = 1.8A
Qgs Gate-to-Source Charge ––– ––– 2.0 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 3.6 VGS = 10V
td(on) Turn-On Delay Time ––– 7.0 – –– V DD = 10V
trRise Time ––– 10 ––– I D = 1.8A
td(off) Turn-Off Delay Time – –– 24 ––– R G = 8.2Ω
tfFall Time ––– 30 ––– RD = 26Ω
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss Input Capacitance ––– 320 ––– VGS = 0V
Coss Output Capacitance ––– 250 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 75 ––– ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time ––– 36 54 n s TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge ––– 41 62 nC di/dt = 100A/µs
ton Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
––– ––– 14
––– ––– 2.0 A
S
D
G
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance ––– 6.0 – – –
LDInternal Drain Inductance ––– 4.0 ––– nH
ns
nA
µA
ΩRDS(ON) Static Drain-to-Source On-Resistance
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7101
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IRF7101
C,
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IRF7101
10
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRF7101
Fig 12b. Basic Gate Charge Waveform
Fig 12a. Gate Charge Test Circuit
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 11a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 11b. Switching Time Waveforms
RD
VGS
VDD
RGD.U.T.
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IRF7101
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 13. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
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IRF7101
Package Outline
SO8 Outline
SO8
Part Marking Information
EXAM PLE : THIS IS AN IR F7 101
DATE CODE (YWW)
Y = LAST DIG IT OF THE YEAR
WW = WEEK
W A FER
L OT CODE
(LAST 4 DIG ITS)
XXXX
BOTTOM
PART NUM BER
TOP
INTERNATIONAL
RECT IF IER
L OGO
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
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IRF7101
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330. 00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTROLLING DIME NS IO N : MIL LIMETER .
2. OUTLINE CON FORMS TO EIA-481 & EIA-541.
FE ED DIRE CTIO N
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTRO LLING DIMENSION : MILLIMETER.
2. ALL DIMENSIO NS ARE SHOWN IN MILLIMETER S(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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