CYStech Electronics Corp.
Spec. No. : C303S3
Issued Date : 2004.04.07
Revised Date
Page No. : 2/4
BAS16S3 CYStek Product Specification
Absolute Maximum Ratings @TA=25℃
Parameters Symbol Min Max Unit
Repetitive peak reverse voltage VRRM - 85 V
Continuous reverse voltage VR - 75 V
Continuous forward current (Note 1) IF - 215 mA
Repetitive peak forward current IFRM 500 mA
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
t=1s
IFSM
-
-
-
4
1
0.5
A
A
A
Total power dissipation (Note 1) Ptot 250 mW
Junction Temperature Tj - 150
°C
Storage Temperature Tstg -65 +150
°C
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Symbol Conditions Min Typ. Max Unit
Forward voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
- -
715
855
1
1.25
mV
mV
V
V
Reverse current IR
VR=25V
VR=75V
VR=25V,Tj=150℃
VR=75V,Tj=150℃
- -
30
1
30
50
nA
µA
µA
µA
Diode capacitance Cd VR=0V, f=1MHz - - 1.5 pF
Reverse recovery time trr
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
- - 4 ns
Forward recovery voltage Vfr when switched from IF=10mA
tr=20ns - - 1.75 V
Thermal Characteristics
Symbol Parameter Conditions Value Unit
Rth,j-tp thermal resistance from junction to tie-point 360 ℃/W
Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W
Note 1: Device mounted on an FR-4 PCB.