© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 8
1Publication Order Number:
2N7000/D
2N7000G
Small Signal MOSFET
200 mAmps, 60 Volts
NChannel TO92
Features
AEC Qualified
PPAP Capable
This is a PbFree Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage VDSS 60 Vdc
DrainGate Voltage (RGS = 1.0 MW)VDGR 60 Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
Pulsed
ID
IDM
200
500
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD350
2.8
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient RqJA 357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16 from case
for 10 seconds
TL300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
G
NChannel
S
1
Source
3
Drain
2
Gate
200 mAMPS
60 VOLTS
RDS(on) = 5 W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 22
2N7000G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 mAdc) V(BR)DSS 60 Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
1.0
1.0
mAdc
mAdc
GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSSF 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
5.0
6.0
W
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
2.5
0.45
Vdc
OnState Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 mAdc
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 100 mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss 60 pF
Output Capacitance Coss 25
Reverse Transfer Capacitance Crss 5.0
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time (VDD = 15 V, ID = 500 mA,
RG = 25 W, RL = 30 W, Vgen = 10 V)
ton 10 ns
TurnOff Delay Time toff 10
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
2N7000G TO92
(PbFree)
1000 Units / Bulk
2N7000RLRAG TO92
(PbFree)
2000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N7000G
http://onsemi.com
3
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V -55°C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
2N7000G
http://onsemi.com
4
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION XX
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
2N7000/D
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