PRELIMINARY GA800DD60U
“SINGLE SWITCH” IGBT DOUBLE INT-A -PAK Ultra-FastTM Speed IGBT
Features
•Generation 4 IGBT technology VCES=600V
•UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200 VCE(on) typ.=1.8V
kHz in resonant mode.
•Very low conduction and switching losses @VGE=15V,IC=800A
•HEXFRED TM antiparallel diodes with ultra-soft
recovery
•Industry standard package
•UL recongnition pending
Benefits
•Increased operating efficiency
•Direct mounting to heatsink
•Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
•Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector- to- Emitter Voltage 600 V
IC @ Tc=25oC Continuous Collector Current 900
IC @ Tc=85oC Continuous Collector Current 800
ICM Pulsed collector Current 1600 A
ILM Peak switching Current 1600
IFM Peak Diode Forward Current 1600
VGE Gate- to- Emitter Voltage ± 20 V
VISOL RMS Isolation Voltage, Any Terminal To Case, t =1 min 2500
PD
@ TC
=25oC Maximum Power Dissipation 2700 W
PD
@ TC
=85oC Maximum Power Dissipation 1400
TJOperating Junction Temperature Range -40 to +150 oC
TSTG Storage Temperature Range -40 to +125
Termal / Mechanical Characteristics
Parameter Typ. Max. Units
RθJC Termal Resistance, Junction-to- Case- IBGT - 0.045
RθJC Termal Resistance, Junction-to- Case- Diode - 0.10 oC/W
RθCS Termal Resistance, Csar-to- Sink- Module 0.1 -
Mouting Torque, Case-to-Heatsink - 4.0 N.m
Mouting Torque, Case-to-Terminal 1,2 & 3 - 3.0
Weight of Module 400 - g
1
12
3
4
10k
XI'AN IR-PERI
Company
http://store.iiic.cc/
Electrical Characteristics @ TJ=25oC(unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
VGE=0V,
IC=5mA
VCE(ON) Collector-to-Emitter Voltage
1.8 2.5 VGE=15V, IC=800A
1.9
V VGE=15V, IC=800A,TJ=125oC
VGE(th)Gate Threshold Voltage 4.5
5.5 IC=5mA,VCE=6.0V
DVGE(th)DTJTemperature Coeff. of Threshold Voltage
-11
mV/oCVCE=6.0V,
IC=5mA
gfe Forward Ttansconductance
911
S VCE=25V, IC=800A
ICES Collector - to - Emitter Leaking Current
3.0 mA VGE=0V, VCE=600V
30 VGE=0V, VCE=600V,
TJ=125oC
VFM Diode Forward Voltage - Maximum
2.6 2.9 V IF=800A , VGE=0V
2.5
IF=800A , VGE=0V ,TJ=125oC
IGES Gate - to - Emitter Leakage Current
2000 nA VGE=±20V
Dynamic Characteristics - TJ=125oC (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
QgTotal gate charge ( turn - on ) 3606 5409 VCC= 400V VGE=15V
Qge Gate - Emitter charge ( turn - on ) 501 676 nC IC=540A
Qgc Gate - Collector charge ( turn - on ) 1212 1818 TJ =25oC
Td(on) Turn - On Delay Time 2066 RG1 =15Ω , RG2 = 0Ω
trRise Time 535 nS IC = 800A
Td(off) Turn - Off Delay Time 1288 VCC= 360V
tfFall Time 346 VGE=±15V
Eon Turn - On Switching Energy 46
Eoff(1) Turn - Off Switching Energy 88 mJ
Ets(1) Total Switching Energy 124 169
Cies Input Capacitance 80262 VGE = 0V
Coes Output Capacitance 5009 pF VCC = 30V
Cres Reverse Transfer Capacitance 1022 f =1MHZ
trr Diode Reverse Recovery Time 332 nS IC = 800A
Irr Diode Peak Reverse Current 180 A RG1=15Ω
Qrr Diode Recovery Charge 32292 nC RG2=0Ω
di(rec)M/dt Diode Peak Rate of Fall of Recovery 1641 A/µs VCC=360V
During tb di/dt=1300A/µs
Notes:
The thermistor has an average rate of 7w/oC between 20oC and 125oC.
GA800DD60U
2
XI'AN IR-PERI
Company
http://store.iiic.cc/
