NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V). * -3.0 A, -60 V. Applications * Fast switching speed * Power management * High performance trench technology for extremely low RDS(ON) * Low gate charge * Load switch * Battery protection * High power and current handling capability DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed 4 6 3 7 2 8 1 Ratings Units -60 V 20 V -3.0 A -12 Maximum Power Dissipation TJ, TSTG 5 TA=25oC unless otherwise noted Parameter VDSS PD RDS(ON) = 150 m @ VGS = -10 V RDS(ON) = 240 m @ VGS = -4.5 V (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 W -55 to +175 C (Note 1a) 50 C/W (Note 1c) 125 (Note 1) 25 Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9407 NDS9407 13'' 12mm 2500 units 2002 Fairchild Semiconductor Corporation NDS9407 Rev B1(W) NDS9407 May 2002 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage, Forward Gate-Body Leakage, Reverse On Characteristics VGS(th) VGS(th) TJ RDS(on) ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C -60 V -45 VGS = 0 V VDS = -48 V, VDS = -48 V, VGS = 0V, TJ = 55C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V mV/C -1 -10 100 -100 A nA nA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C -1 VGS = -10 V, ID = -3.0 A VGS = -4.5 V, ID = -1.6 A VGS= -10 V, ID = -3.0 A, TJ =125C -1.6 4 -3 V 78 99 122 150 240 250 mV/C -12 m ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -15 V, ID = -3.0 A 8 A VDS = -30 V, f = 1.0 MHz V GS = 0 V, 732 pF 86 pF 38 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) (Note 2) 8 16 ns 11 20 ns Turn-Off Delay Time 10 20 ns tf Turn-Off Fall Time 10 20 ns trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, VGS = -10 V, ID = -1 A, RGEN = 6 IF = -3.0 A, diF/dt = 100 A/s VDS = -30 V, VGS = -10 V ID = -3.0 A, 24 nS 66 nC 16 22 nC 2.2 nC 3.3 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage (Note 2) -0.8 -2.1 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% NDS9407 Rev B1(W) NDS9407 Electrical Characteristics NDS9407 Typical Characteristics 2.4 20 -6.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -4.0V 16 12 -3.5V 8 -3.0V 4 0 2.2 VGS=-3.0V 2 1.8 -3.5V 1.6 -4.0V -4.5V 1.4 -6.0V 1.2 -10V 1 0.8 0 1 2 3 4 5 6 0 4 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 20 0.3 ID = -3A VGS = -10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 ID = -1.5A 0.25 0.2 TA = 125oC 0.15 0.1 TA = 25oC 0.05 -50 -25 0 25 50 75 100 125 150 2 175 o 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 25oC o TA = -55 C -IS, REVERSE DRAIN CURRENT (A) VDS = -10V -ID, DRAIN CURRENT (A) 12 -ID, DRAIN CURRENT (A) 8 125oC 6 4 2 0 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 VGS =0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS9407 Rev B1(W) NDS9407 Typical Characteristics 1200 ID = -3A VDS = -20V f = 1 MHz VGS = 0 V -30V 1000 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -40V 6 4 CISS 800 600 400 COSS 2 200 CRSS 0 0 0 2 4 6 8 10 12 14 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 60 P(pk), PEAK TRANSIENT POWER (W) 50 100s 10 1ms 10ms 100ms 1s RDS(ON) LIMIT 1 10s VGS = -10V SINGLE PULSE RJA = 125oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 0.1 o RJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDS9407 Rev B1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5