MBR6030PT thru 6045PT
MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 6 0H z, resis tive or inductive load.
F o r capacitive load, dera te c u rr e n t b y 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, h igh efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flamm ability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
ME CHANICAL DATA
Ca s e : TO -3P m o l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Av erage Forward
Rectified Current (See Fig.1)
@T
C
=
125 C
Peak Forward Surge Current
8.3ms s ingle ha lf sine- w ave
superimposed on rated load (JEDEC METHOD)
Maximum R ecurrent Pea k Reverse Voltage
Maximum RMS Vol tage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
60
500
0.62
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
Typical Thermal Resistance (Note 2)
1.0
C/W
T
J
=25 C
C
J
Typical Junction Capacitance
per e leme nt
(Note 3)
700
pF
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 50
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
T
J
=125 C
R
0JC
I
F
=30A @
I
F
=30A @
I
F
=60A @
MBR6030PT
30
21
30
MBR6035PT
35
24.5
35
MBR6040PT
40
28
40
MBR6045PT
45
31.5
45
V
NOTES : 1. 300us Pulse Width duty cycle 2%.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
0.75
1.0
T
J
=25 C 0.55
TO-3P
PIN 1
PIN 3 PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
123
SCHOTTKY BAR RIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
45
Volts
FOR WARD CURRENT
- 60
Amperes
All Dimensions in millim et er
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN. MAX.
15.75 16.25
21.7521.25
19.60 20.10
4.3 8 3.78
1.88 2.08
4.87 5.13
1.90 2.16
1.221.12
2.90 3.20
5.20 5.70
2.10 2.40
0.76
0.51
2.93 3.22
1.93 2.18
20 TYP
4.4 T YP. 4.4 T YP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KTHD14
RATING AND CHARACTERISTIC CU RVES
MBR6030PT thru MBR6045PT
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
PULSE WIDTH 300ua
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
TJ= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG.3 - TYPICAL REVERSE CHARACTERIST ICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
100
10
60 80 100
0.1
TJ= 100 C
TJ= 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VO LTS
10
1100
10000
1000
100 TJ= 25 C, f= 1MHz
0.1
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
100
150
200
300
400
500
FIG.1 - FORWARD CURRENT DERATING CURV E
AVERAGE FO RWARD CURRENT
AMPERES
25 75 100 125 150
20
050
80
175
8.3ms Single Half - Sine -Wave
(JEDEC METHOD)
60
0
40
RESISTIVE OR
INDUC TIVE LOAD
CASE TEMPERATURE , C
TJ= 25 C
TJ= 125 C
4
REV. 2, 01-Dec-2000, KTHD14
