DATA SH EET
Product specification
Supersedes data of 2002 Feb 05 2002 Aug 06
DISCRETE SEMICONDUCTORS
BGA2709
MMIC wideband amplifier
dbook, halfpage
MBD128
2002 Aug 06 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
FEATURES
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Micr ow ave Integrated Circu i t (MMIC )
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic pa ck age.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3RF out
4GND1
6RF in
MAM455
132
41
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E3-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maxi mum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage 5 6 V
ISDC supply current 23.5 mA
|s21|2insertio n po we r ga in f = 1 GHz 22.7 dB
NF noise figure f = 1 GHz 4 dB
PL(sat) saturated load power f = 1 GHz 12.5 dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSDC supply voltage RF input AC coupled 6V
ISsupply current 35 mA
Ptot total power dissipation Ts90 C200 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
PDmaximum drive power 10 dBm
CAUTION
This product is supplied in anti-s tatic packing to prevent damage caused by electros tatic discharge during transport
and handling.
2002 Aug 06 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
THERMAL CHARACTE RISTI CS
CHARACTERISTICS
VS=5V; I
S=23.5mA; T
j=25C unless oth er wise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to solder
point Ptot = 200 mW; Ts90 C300K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current 19 23.5 32 mA
|s21|2insertio n po wer gain f = 100 MHz 21 22.2 23 dB
f = 1 GHz 21 22.7 24 dB
f = 1.8 GHz 22 23.0 24 dB
f = 2.2 GHz 21 23.0 24 dB
f = 2.6 GHz 20 22.1 23 dB
f = 3 GHz 18 21.1 22 dB
RL IN return losses input f = 1 GHz 9 11 dB
f=2.2GHz 9 11 dB
RL OUT return losses output f = 1 GHz 17 20 dB
f = 2.2 GHz 20 24 dB
|s12|2isolation f = 1.6 GHz 31 33 dB
f = 2.2 GHz 34 36 dB
NF noise figure f = 1 GHz 4.0 4.4 dB
f=2.2GHz 4.4 4.9 dB
BW bandwidth at s2123 dB below flat gain at 1 GHz 3.1 3.6 GHz
K stability factor f = 1 GHz 1.3 1.7 
f=2GHz 1.8 2.2 
PL(sat) saturated load power f = 1 GH z 11 12.5 dBm
f=2.2GHz 5 7.5 dBm
PL 1 dB load power at 1 dB gain compression; f = 1 GHz 7 8.3 dBm
at 1 dB gain compressio n; f = 2.2 GHz 3 5.4 dBm
IP3(in) input intercept point f = 1 GHz 31dBm
f=2.2GHz 79dBm
IP3(out) output intercept point f = 1 GHz 20 22 dBm
f = 2.2 GHz 12 14 dBm
2002 Aug 06 4
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2709 MMIC. The device is internally matched to 50 ,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the dev i ce is operated below
100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At
frequencies below 100 MH z this valu e should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a go od quality chip induc tor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke, L1 and the 22 nF supply decoupling
capacitor, C1 should be located as closely as possib le to
the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as poss ible. When using vias, use multiple vias per
pin in order to limit groun d pa th ind uctance.
Figure 3 shows two cascaded MMICs. This configuration
doubles ove rall gain while pres erving broadband
characteris tics. Supply de coupling and grou nding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and outpu t offer quick design solut ions
in such applications.
handbook, halfpage
MGU436
RF outRF in
C1 L1
C2 C3
GND2GND1
Vs
Vs
RF input RF output
Fig.2 Typical application circuit.
handbook, halfpage DC-block
100 pF DC-block
100 pF
DC-block
100 pF
input output
MGU437
Fig.3 Simple cascade c i rcuit.
handbook, halfpage
from RF
circuit to IF circuit
or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 IF amplifier application.
handbook, halfpage
antenna to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA wideband
amplifier
Fig.5 RF amplifier application.
handbook, halfpage
from modulation
or IF circuit to power
amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Power amplifier driver application.
2002 Aug 06 5
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
handbook, full pagewidth
MLD894
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5
4 GHz
100 MHz
1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.7 Input reflection coefficient (s11); typical values.
IS=23.5mA; V
S=5V; P
D=30 dBm; ZO=50
handbook, full pagewidth
MLD895
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5
4 GHz 100 MHz
1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.8 Output reflection coefficient (s22); typical values.
IS=23.5mA; V
S=5V; P
D=30 dBm; ZO=50
2002 Aug 06 6
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
handbook, halfpage
0 1000 f (MHz)
2000 4000
0
−50
−10
3000
−20
−30
−40
MLD896
s12 2
(dBm)
Fig.9 Isolation (|s12|2) as a function of frequency;
typical values.
IS=23.5mA; V
S=5V; P
D=30 dBm; ZO=50
handbook, halfpage
0f (MHz)
(1)
(3) (2)
25
20
15
10 1000 2000 4000
3000
MLD897
s21 2
(dBm)
Fig.10 Insertion gain (|s21|2) as a function of
frequency; typical values.
PD=30 dBm; ZO=50
(1) IS=28.4mA; V
S=5.5V
(2) IS=23.5mA; V
S=5V
(3) IS=18.8mA; V
S=4.5V
handbook, halfpage
15
−30 −20 0
−10
−5
0
5
10
−10 PD (dBm)
PL
(dBm)
MLD898
(1)
(3)
(2)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f=1GHz; Z
O=50
(1) VS=4.5V
(2) VS=5V
(3) VS=5.5V
handbook, halfpage
15
−30 −20 0
−10
−5
0
5
10
−10 PD (dBm)
PL
(dBm)
MLD899
(1)
(3)
(2)
Fig.12 Load power as a function of drive power at
2.2 GHz; typ i cal values.
f=2.2GHz; Z
O=50
(1) VS=4.5V
(2) VS=5V
(3) VS=5.5V
2002 Aug 06 7
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
handbook, halfpage
0 500 2500
5.5
5
4
3.5
4.5
1000 f (MHz)
NF
(dB)
1500 2000
MLD900
(1)
(3)
(2)
Fig.13 Noise figure as a function of frequency;
typical values.
PD=30 dBm; ZO=50
(1) IS=18.8mA; V
S=4.5V
(2) IS=23.5mA; V
S=5V
(3) IS=28.4mA; V
S=5.5V
handbook, halfpage
0f (MHz)
K
1000 2000 4000
10
0
8
3000
6
4
2
MLD901
Fig.14 Stability factor as a function of frequency;
typical values.
IS=23.5mA; V
S=5V; Z
O=50
2002 Aug 06 8
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
Table 1 Scattering parameters: IS=23.5mA; V
S=5V; P
D=30 dBm; ZO=50; Tamb =25C
f (MHz) s11 s21 s12 s22 K-
FACTOR
MAGNITUDE
(ratio) ANGLE(
deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg) MAGNITUDE
(ratio) ANGLE
(deg)
100 0.23362 32.281 12.90523 21.565 0.036496 16.408 0.16296 61.578 1.2
200 0.25252 11.824 13.22858 4.852 0.032314 5.728 0.13501 60.573 1.3
400 0.25838 2.149 13.43580 10.31 0.029604 5.865 0.10353 41.717 1.3
600 0.25990 8.784 13.51088 21.14 0.027122 11.45 0.085075 16.95 1.4
800 0.26278 12.76 13.56715 30.93 0.024611 15.08 0.088892 1.879 1.5
1000 0.26695 14.88 13.65916 40.37 0.022107 16.33 0.09716 13.36 1.7
1200 0.27404 16.30 13.74736 49.83 0.019986 15.67 0.10279 20.25 1.8
1400 0.27921 16.51 13.85661 59.47 0.018217 13.42 0.10385 23.24 1.9
1600 0.28486 16.78 14.03414 69.50 0.017049 9.927 0.099148 24.08 2.0
1800 0.28749 17.25 14.16012 80.23 0.016409 5.968 0.089633 20.58 2.1
2000 0.28601 17.76 14.23586 91.65 0.015912 2.04 0.076785 14.48 2.1
2200 0.27487 18.98 14.14430 103.9 0.015829 1.077 0.062455 4.5072.2
2400 0.25176 19.94 13.70546 117.0 0.016054 3.361 0.044552 11.808 2.2
2600 0.21405 17.09 12.75365 129.7 0.015801 3.145 0.023668 98.126 2.5
2800 0.19288 11.85 11.96153 138.7 0.015406 7.602 0.057779 104.35 2.7
3000 0.18347 6.228 11.33015 147.6 0.015049 11.411 0.094848 119.98 2.9
3200 0.17459 6.327 10.94943 156.3 0.015098 15.52 0.12948 123.28 3.0
3400 0.15344 14.14 10.65459 167.3 0.015529 20.649 0.15325 126.56 3.0
3600 0.10799 26.12 10.28106 179.1 0.017107 23.92 0.16627 131.67 2.8
3800 0.05984 39.66 9.56897 170.0 0.018529 23.226 0.16317 140.54 2.8
4000 0.025953 28.87 8.97718 157.3 0.019276 18.403 0.14602 157.03 2.9
2002 Aug 06 9
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
2002 Aug 06 10
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a d esign.
2. The product status of device(s) described in this documen t may have changed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document co ntains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
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shall have no liability for the consequences of use of such
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reserves the right to make changes to information
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accepts no liability for inclusion and/or use of NXP
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application s and therefore such inclusion and /or use is at
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as
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party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and pr oducts.
2002 Aug 06 11
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2709
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
avoid a default of the app lications and the products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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extract of th e product data given in the Li miting values and
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Printed in The Netherlands R77/02/pp12 Date of release: 2002 Aug 06