Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
CM75MX-24A
1Rev. 11/11
Description:
CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter sec-
tion, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sens-
ing the baseplate temperature. 5th
Generation CSTBT chips yield low
loss.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75MX-24A is a 1200V (VCES),
75 Ampere CIB Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 75 24
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
U 0.59 15.0
Dimensions Inches Millimeters
V 0.3 7.62
W 0.46 11.66
X 0.16 4.2
Y 0.08 Dia. 2.1 Dia.
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.047 1.2
AL 0.49 12.5
AM 0.06 1.5
AN 0.17 Dia. 4.3 Dia.
AP 0.10 Dia. 2.5 Dia.
P1(54-55)
T
(9-10)
P(52-53)
N(57-58)
ConvDi
ClampDi FWDi
S
(5-6)
R
(1-2)
GWN(32)
ES(31)
GWP(39)
ESWP(38)
GVN(33)
GVP(44)
ESVP(43)
GUN(34)
GUP(49)
ESUP(48)
U(13-14)
B(24-25)
V(17- 18)W(21-22)
GB(35)
N1(60-61)
TH2
(29)
TH1
(28)
DETAIL "B"
A
AA
J
D
E
F
M M
KKKK
GK
K
K
K
L
L
H
AG
KAH
AK
AJ
Z
C
AB
R B P
X
AL
Y
K
L
N (4 PLACES)
AC
KKKKKK
U
T
AD
V
W
X
V
K
K
K
LLLLL
AE
AF
Y
AM
AP
AN
KQ
M
S
DETAIL "B"
DETAIL "A"
DETAIL "A"
12 345678910111213141516171819202122
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2Rev. 11/11
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM75MX-24A Units
Inverter Part IGBT/FWDi
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (DC, TC = 93°C)*2,*4 IC 75 Amperes
Collector Current (Pulse)*3 ICRM 150 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 500 Watts
Emitter Current*2 IE*1 75 Amperes
Emitter Current (Pulse)*3 IERM*1 150 Amperes
Brake Part IGBT/ClampDi
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (DC, TC = 97°C)*2,*4 IC 50 Amperes
Collector Current (Pulse)*3 ICRM 100 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 355 Watts
Repetitive Peak Reverse Voltage VRRM 1200 Volts
Forward Current (TC = 25°C)*2 IF 50 Amperes
Forward Current (Pulse)*3 IFRM 100 Amperes
Converter Part ConvDi
Repetitive Peak Reverse Voltage VRRM 1600 Volts
Recommended AC Input Voltage Ea 440 Volts
DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)*2,*4 IO 75 Amperes
Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) IFSM 750 Amperes
Current Square Time (Value for One Cycle of Surge Current) I2t 2340 A2s
Module
Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) VISO 2500 Volts
Junction Temperature Tj -40 ~ +150 °C
Storage Temperature Tstg -40 ~ +125 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips. 0
00
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
VPWP
WN
Br
VN
UN
UP
59.6
76.9
70.4
82.1
86.7
94.2
1 01. 7
26.7
35.2
43.4
44.9
25.5
42.9
26.5
29.5
23.1
33.5
43.9
26.0
36.4
46.8
TN
SN
RN
RP SP TP
Th
98.5
25.6
60.8
68.3
74.1
85.6
91.8
102.9
104.9
18.7
25.1
33.3
35.8
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi Converter Diode NTC Thermistor
Chip Location (Top View)
UPVPWP
WN
VN
UN
Br
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3Rev. 11/11
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 6 7 8 Volts
Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 75A, VGE = 15V*5 — 2.0 2.6 Volts
Tj = 125°C, IC = 75A, VGE = 15V*5 — 2.2 — Volts
IC = 75A, VGE = 15V, Chip — 1.9 — Volts
Input Capacitance Cies — — 11.5 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.0 nF
Reverse Transfer Capacitance Cres — — 0.23 nF
Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V — 380 — nC
Inductive Turn-on Delay Time td(on) — — 100 ns
Load Turn-on Rise Time tr VCC = 600V, IC = 75A, VGE = ±15V, — — 50 ns
Switch Turn-off Delay Time td(off) RG = 4.3Ω, Inductive Load — — 300 ns
Time Turn-off Fall Time tf — — 600 ns
Emitter-Collector Voltage VEC*1 Tj = 25°C, IE = 75A, VGE = 0V*5 — 2.6 3.4 Volts
Tj = 125°C, IE = 75A, VGE = 0V*5 — 2.16 — Volts
IE = 75A, VGE = 0V, Chip — 2.5 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 75A, VGE = ±15V — — 200 ns
Reverse Recovery Charge Qrr*1 RG = 4.3Ω, Inductive Load — 3.5 — µC
Internal Gate Resistance rg TC = 25°C, Per Switch — 0 — Ω
External Gate Resistance RG 4.1 — 41 Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4Rev. 11/11
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Brake Part IGBT/ClampDi
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 0V 6 7 8 Volts
Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 50A, VGE = 15V*5 — 2.0 2.6 Volts
Tj = 125°C, IC = 50A, VGE = 15V*5 — 2.2 — Volts
IC = 50A, VGE = 15V, Chip — 1.9 — Volts
Input Capacitance Cies — — 8.5 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 0.75 nF
Reverse Transfer Capacitance Cres — — 0.17 nF
Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V — 250 — nC
Internal Gate Resistance rg TC = 25°C — 0 — Ω
Repetitive Reverse Current IRRM VR = VRRM — — 1.0 mA
Forward Voltage Drop VF Tj = 25°C, IF = 50A*5 — 2.6 3.4 Volts
Tj = 125°C, IF = 50A*5 — 2.16 — Volts
IF = 50A, Chip — 2.5 — Volts
External Gate Resistance RG 6.0 — 62 Ω
Converter Part
Repetitive Peak Reverse Current IRRM VR = VRRM, Tj = 150°C — — 20 mA
Forward Voltage Drop VF IF = 75A*5 — 1.2 1.6 Volts
NTC Thermistor Part
Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R R100 = 493Ω, TC = 100°C*4 -7.3 — +7.8 %
B Constant B(25/50) Approximate by Equation*6 — 3375 — K
Power Dissipation P25 TC = 25°C*4 — — 10 mW
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 B(25/50) = In( R25)/( 1 – 1 )
R50 T25 T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
0
00
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
VPWP
WN
Br
VN
UN
UP
59.6
76.9
70.4
82.1
86.7
94.2
1 01. 7
26.7
35.2
43.4
44.9
25.5
42.9
26.5
29.5
23.1
33.5
43.9
26.0
36.4
46.8
TN
SN
RN
RP SP TP
Th
98.5
25.6
60.8
68.3
74.1
85.6
91.8
102.9
104.9
18.7
25.1
33.3
35.8
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi Converter Diode NTC Thermistor
Chip Location (Top View)
UPVPWP
WN
VN
UN
Br
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
5Rev. 11/11
– : CONCAVE
+ : CONVEX
– : CONCAVE
X
Y
+ : CONVEX
MOUNTING
SIDE
MOUNTING SIDE
MOUNTING SIDE
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per Inverter IGBT*4 — — 0.25 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per Inverter FWDi*4 — — 0.40 °C/W
Thermal Resistance, Junction to Case Rth(j-c)Q Brake IGBT*4 — — 0.35 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Brake ClampDi*4 — — 0.63 °C/W
Thermal Resistance, Junction to Case Rth(j-c)D Per ConvDi*4 — — 0.24 °C/W
Contact Thermal Resistance Rth(c-s) Case to Heatsink, Per 1 Module — 0.015 — °C/W
Thermal Grease Applied*4,*7
Mechanical Characteristics
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Mounting Torque, M5 Mounting Screws — 31 in-lb
Module Weight (Typical) — 270 Grams
Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) VISO 2500 Volts
Flatness of Baseplate*8 ec ±0 to +100 µm
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 0
00
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
VPWP
WN
Br
VN
UN
UP
59.6
76.9
70.4
82.1
86.7
94.2
1 01. 7
26.7
35.2
43.4
44.9
25.5
42.9
26.5
29.5
23.1
33.5
43.9
26.0
36.4
46.8
TN
SN
RN
RP SP TP
Th
98.5
25.6
60.8
68.3
74.1
85.6
91.8
102.9
104.9
18.7
25.1
33.3
35.8
Dimensions in mm (Tolerance: ±1mm)
IGBT FWDi Converter Diode NTC Thermistor
Chip Location (Top View)
UPVPWP
WN
VN
UN
Br
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
6Rev. 11/11
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
100102
102
101
100
10-1
10-2
101
0 1 32 4
100
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 150A
IC = 75A
IC = 30A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13
9
Tj = 25°C
150
25
50
75
100
125
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
4.0
3.5
3.0
0
2.0
2.5
1.0
1.5
0.5
015075 100 12525 50
VGE = 15V
Tj = 25°C
Tj = 125°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
td(off)
td(on) tr
VCC = 300V
VGE = ±15V
RG = 4.3Ω
Tj = 125°C
Inductive Load
tf
102
GATE RESISTANCE, RG, (Ω)
103
100101
102
100
101
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
tf
102
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
(INVERTER PART)
20
0
16
12
8
4
0
100 500300 400200
VCC = 600V
VCC = 400V
IC = 75A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
100101
102
100
101
102
VCC = 300V
VGE = ±15V
RG = 4.3Ω
Tj = 25°C
Inductive Load
Irr
trr
15
REVERSE RECOVERY, Irr (A), trr (ns)
CM75MX-24A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
7Rev. 11/11
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.25°C/W
(IGBT)
Rth(j-c) =
0.40°C/W
(FWDi)
Rth(j-c) =
0.24°C/W
(Converter
Diode)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.35°C/W
(IGBT)
Rth(j-c) =
0.63°C/W
(Clamp Diode)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
100101
101
100
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
102
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
Eon
Eoff
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
101
100
VCC = 300V
VGE = ±15V
IE = 75A
Tj = 125°C
Inductive Load
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
100101
100
10-1
VCC = 300V
VGE = ±15V
RG = 4.3Ω
Tj = 125°C
Inductive Load
102
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
Err
Err
VCC = 300V
VGE = ±15V
RG = 4.3Ω
Tj = 125°C
Inductive Load
Eon
Eoff
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
101
100101
100
10-1
102
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
0 1 3 42 5
100
101
FORWARD VOLTAGE, VF, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
FORWARD CURRENT, IF, (AMPERES)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
4.0
3.0
0
2.0
1.0
01007525 50
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0 0.5 1.51.0 2.0
100
101
FORWARD VOLTAGE, VF, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CONVERTER PART - TYPICAL)
102
103
FORWARD CURRENT, IF, (AMPERES)
Tj = 25°C
Tj = 125°C