Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) () ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 * TrenchFET(R) Power MOSFETS * 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT * Buck Converter * Synchronous Rectifier - Secondary Rectifier D SO-8 S 1 8 S D 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4856DY-T1 Si4856DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 12 14 9 50 2.7 1.40 3.0 1.6 2.0 1.0 TJ, Tstg Operating Junction and Storage Temperature Range V 17 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Symbol t 10 sec Steady State Steady State RthJA RthJF Typical Maximum 34 41 67 80 15 19 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71881 S-61005-Rev. C, 12-Jun-06 www.vishay.com 1 Si4856DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min 1.0 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 A 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70 C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a VDS 5 V, VGS = 10 V A 40 A VGS = 10 V, ID = 17 A 0.0046 0.006 VGS = 4.5 V, ID = 14 A 0.0066 0.0085 gfs VDS = 15 V, ID = 17 A 57 VSD IS = 2.7 A, VGS = 0 V 0.72 1.1 21 30 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG VDS = 15 V, VGS = 4.5 V, ID = 17 A 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, RG = 6 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 8 7.2 IF = 2.7 A, di/dt = 100 A/s 1.5 2.6 16 25 10 20 57 90 16 25 40 70 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless noted 60 60 VGS = 10 thru 4 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 30 20 3V 10 40 30 20 TC = 125 C 10 25 C - 55 C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 71881 S-61005-Rev. C, 12-Jun-06 Si4856DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 3500 0.010 2800 VGS = 4.5 V C - Capacitance (pF) r DS(on) - On-Resistance () Ciss 0.008 0.006 VGS = 10 V 0.004 2100 1400 Coss 700 0.002 Crss 0 0.000 0 10 20 30 40 0 50 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 6 1.6 VDS = 15 V ID = 17 A 5 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 18 4 3 2 VGS = 10 V ID = 17 A 1.4 1.2 1.0 0.8 1 0 0 6 12 18 24 0.6 - 50 30 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 0.025 50 r DS(on) - On-Resistance () I S - Source Current (A) 0.020 TJ = 150 C 10 TJ = 25 C 0.010 ID = 17 A 0.005 0.000 1 0.00 0.015 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71881 S-61005-Rev. C, 12-Jun-06 10 www.vishay.com 3 Si4856DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 0.4 200 ID = 250 A 160 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (sec) TJ - Temperature (C) Single Pulse Power Threshold Voltage 100 Limited by rDS(on) 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 TC = 25 C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71881 S-61005-Rev. C, 12-Jun-06 Si4856DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71881. Document Number: 71881 S-61005-Rev. C, 12-Jun-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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