Vishay Siliconix
Si4856DY
New Product
Document Number: 71881
S-61005-Rev. C, 12-Jun-06
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1
N-Channel 30-V MOSFET
FEATURES
• TrenchFET® Power MOSFETS
• 100 % RG Tested
APPLICATIONS
• Buck Converter
• Synchronous Rectifier
- Secondary Rectifier
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω)I
D (A)
30 0.006 at VGS = 10 V 17
0.0085 at VGS = 4.5 V 14
S
G
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4856DY-T1
Si4856DY-T1-E3
(
Lead
(
Pb
)
-free
)
SD
SD
D
D
N-Channel MOSFET
D
G
S
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
17 12
A
TA = 70 °C 14 9
Pulsed Drain Current IDM ± 50
Continuous Source Current (Diode Conduction)aIS2.7 1.40
Maximum Power DissipationaTA = 25 °C PD
3.0 1.6 W
TA = 70 °C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)at ≤ 10 sec RthJA
34 41
°C/W
Steady State 67 80
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 19
Available
RoHS*
COMPLIANT
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Document Number: 71881
S-61005-Rev. C, 12-Jun-06
Vishay Siliconix
Si4856DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 1µA
VDS = 30 V, VGS = 0 V, TJ = 70 °C 5
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 40 A
Drain-Source On-State ResistancearDS(on)
VGS = 10 V, ID = 17 A 0.0046 0.006 Ω
VGS = 4.5 V, ID = 14 A 0.0066 0.0085
Forward Transconductanceagfs VDS = 15 V, ID = 17 A 57 S
Diode Forward VoltageaVSD IS = 2.7 A, VGS = 0 V 0.72 1.1 V
Dynamicb
Total Gate Charge Qg
VDS = 15 V, VGS = 4.5 V, ID = 17 A
21 30
nCGate-Source Charge Qgs 8
Gate-Drain Charge Qgd 7.2
Gate Resistance RG0.5 1.5 2.6 Ω
Tur n - O n D e l ay Time td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
16 25
ns
Rise Time tr10 20
Turn-Off Delay Time td(off) 57 90
Fall Time tf16 25
Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/µs 40 70
Output Characteristics
0
10
20
30
40
50
60
012345
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
Transfer Characteristics
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
TC = 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
Document Number: 71881
S-61005-Rev. C, 12-Jun-06
www.vishay.com
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Vishay Siliconix
Si4856DY
TYPICAL CHARACTERISTICS 25 °C unless noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.002
0.004
0.006
0.008
0.010
0 1020304050
VGS = 10 V
- On-Resistance (Ω)r
DS(on)
ID - Drain Current (A)
VGS = 4.5 V
0
1
2
3
4
5
6
0 6 12 18 24 30
VDS = 15 V
ID = 17 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
VGS
1.0 1.2
1
10
50
0.00 0.2 0.4 0.6 0.8
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Crss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
700
1400
2100
2800
3500
0 6 12 18 24 3
0
Coss
Ciss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 17 A
TJ - Junction Temperature (°C)
(Normalized)
- On-ResistancerDS(on)
0.000
0.005
0.010
0.015
0.020
0.025
0246810
ID = 17 A
- On-Resistance (Ω)rDS(on)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71881
S-61005-Rev. C, 12-Jun-06
Vishay Siliconix
Si4856DY
TYPICAL CHARACTERISTICS 25 °C unless noted
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 250 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
Single Pulse Power
0.001
0
1
200
80
120
100.01
Time (sec)
40
160
Power (W)
0.1
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
TC = 25 °C
Single Pulse
- Drain Current (A)ID
0.1
1 ms
10 ms
100 ms
1 s
10 s
dc
rDS(on)
Limited by
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 67 °C/W
3. T JM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Document Number: 71881
S-61005-Rev. C, 12-Jun-06
www.vishay.com
5
Vishay Siliconix
Si4856DY
TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71881.
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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