© 2006 IXYS CORPORATION All rights reserved
DS99715 (11/06)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C55V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V
VGSM Transient ± 20 V
ID25 TC= 25°C 240 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 650 A
IAR TC= 25°C25A
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 3 V/ns
TJ≤ 175°C, RG = 5 Ω
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -40 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque 1.13 / 10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA55V
VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 2.7 3.6 m Ω
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH240N055T
IXTQ240N055T
VDSS =55 V
ID25 = 240 A
RDS(on) ≤≤
≤≤
≤3.6 mΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
Preliminary Technical Information
GDS
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH240N055T
IXTQ240N055T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 60 A, Note 1 75 132 S
Ciss 7600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1240 pF
Crss 260 pF
td(on) Resistive Switching Times 40 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns
td(off) RG = 5 Ω (External) 63 ns
tf75 ns
Qg(on) 170 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 32 nC
Qgd 48 nC
RthJC 0.31°C/W
RthCS 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 240 A
ISM Pulse width limited by TJM 650 A
VSD IF = 50 A, VGS = 0 V, Note 1 1.2 V
trr IF = 25 A, -di/dt = 100 A/µs70ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTH240N055T
IXTQ240N055T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
330
00.5 11.522.533.544.55
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 120A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 240A
I
D
= 120A
Fig. 5. R
DS(on)
Normalized to I
D
= 120A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH240N055T
IXTQ240N055T
Fig. 7. Input Admittance
0
30
60
90
120
150
180
210
240
270
33.5 44.5 55.5 66.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
0 40 80 120 160 200 240 280
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
30
60
90
120
150
180
210
240
270
300
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 27.5V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2006 IXYS CORPORATION All rights reserved
IXTH240N055T
IXTQ240N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
33
36
39
42
45
48
51
54
57
60
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t r
- Nanoseconds
34
38
42
46
50
54
58
62
66
t
d ( o n ) - Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V I
D
= 50A
25A
I
D
= 50A
25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
58
60
62
64
66
68
70
72
74
76
78
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t f
- Nanosecond
s
60
64
68
72
76
80
84
88
92
96
100
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
V
DS
= 30V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
58
60
62
64
66
68
70
72
74
76
78
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
60
64
68
72
76
80
84
88
92
96
100
t
d ( o f f ) - Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC, 125ºC
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
30
33
36
39
42
45
48
51
54
57
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
50
75
100
125
150
175
200
225
4 6 8 101214161820
R
G
- Ohms
t f
- Nanoseconds
60
100
140
180
220
260
300
340
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
IXYS REF: T_240N055T (61) 11-16-06-B.xls
