IRG4PC50UD - International Rectifier

IRG4PC50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

E

G

n-channel

C

VCES = 600V

VCE(on) typ. = 1.65V

@VGE = 15V, IC = 27A

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case - IGBT ------ ------ 0.64

RθJC Junction-to-Case - Diode ------ ------ 0.83 °C/W

RθCS Case-to-Sink, flat, greased surface ------ 0.24 ------

RθJA Junction-to-Ambient, typical socket mount ----- ----- 40

Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

UltraFast CoPack IGBT

12/30/00

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 55

IC @ TC = 100°C Continuous Collector Current 27

ICM Pulsed Collector Current Q220 A

ILM Clamped Inductive Load Current R220

IF @ TC = 100°C Diode Continuous Forward Current 25

IFM Diode Maximum Forward Current 220

VGE Gate-to-Emitter Voltage ± 20 V

PD @ TC = 25°C Maximum Power Dissipation 200

PD @ TC = 100°C Maximum Power Dissipation 78

TJOperating Junction and -55 to +150

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-247AC package

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

PD 91471B

W

TO-247AC

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Parameter Min. Typ. Max. Units Conditions

QgTotal Gate Charge (turn-on) ---- 18 0 27 0 I C = 27A

Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8

Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V

td(on) Turn-On Delay Time ---- 46 ---- TJ = 25°C

trRise Time ---- 25 ---- ns IC = 27A, VCC = 480V

td(off) Turn-Off Delay Time ---- 140 230 VGE = 15V, RG = 5.0Ω

tfFall Time ---- 74 110 Energy losses include "tail" and

Eon Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery.

Eoff Turn-Off Switching Loss ---- 0.59 ---- m J See Fig. 9, 10, 11, 18

Ets Total Switching Loss ---- 1.58 1.9

td(on) Turn-On Delay Time ---- 44 ---- TJ = 150°C, See Fig. 9, 10, 11, 18

trRise Time ---- 27 ---- ns IC = 27A, VCC = 480V

td(off) Turn-Off Delay Time ---- 240 ---- V GE = 15V, RG = 5.0Ω

tfFall Time ---- 130 ---- Energy losses include "tail" and

Ets Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery.

LEInternal Emitter Inductance ---- 13 ---- nH Measured 5mm from package

Cies Input Capacitance ---- 4000 ---- VGE = 0V

Coes Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7

Cres Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz

trr Diode Reverse Recovery Time ---- 50 75 ns TJ = 25°C See Fig.

---- 105 160 TJ = 125°C 14 IF = 25A

Irr Diode Peak Reverse Recovery Current ---- 4. 5 10 A TJ = 25°C See Fig.

---- 8.0 15 TJ = 125°C 15 VR = 200V

Qrr Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25°C See Fig.

---- 420 1200 TJ = 125°C 16 di/dt 200A/µs

di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/µs TJ = 25°C

During tb---- 160 ---- TJ = 125°C

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown VoltageS600 ---- ---- V VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°CV

GE = 0V, IC = 1.0mA

VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V

---- 2.0 ---- V IC = 55A See Fig. 2, 5

---- 1.6 ---- IC = 27A, TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 V CE = VGE, I C = 250µA

∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- m V/°CV

CE = VGE, IC = 250µA

gfe Forward Transconductance T16 24 ---- S VCE = 100V, IC = 27A

ICES Zero Gate Voltage Collector Current ---- ---- 250 µ A VGE = 0V, VCE = 600V

---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150°C

VFM Diode Forward Voltage Drop ---- 1.3 1. 7 V IC = 25A See Fig. 13

---- 1.2 1.5 IC = 25A, TJ = 150°C

IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA V GE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

0.1

1

10

100

1000

0110

CE

C

I , C ollector-to-E mitter Cu rre nt (A )

V , C o lle cto r-to -E mitte r V olta

g

e

(

V

)

T = 150°C

T = 25°C

J

A

V = 15V

20

µ

s PULSE WID TH

GE

1

10

100

1000

4 6 8 10 12

C

I , C olle c to r-to-E m itte r C u rre nt (A )

GE

T = 2 5°C

T = 150°C

J

V , G ate -to-Em itter V o lta

g

e

(

V

)

A

V = 10V

5µs PU LSE WIDTH

CC

0

10

20

30

40

0.1 1 10 100

f, Freq uen c

y

(k H z )

Load C urrent (A)

A

60% of rated

vo lta g e

D uty cycle : 50%

T = 1 25°C

T = 9 0 °C

Gate drive as specified

Turn -on lo sses include

effe c ts o f rev e rse re cov e ry

sink

J

Power Dissipation = 40W

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Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1.0

1.5

2.0

2.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

CE

V , Co llec to r- to - Emitter Volta g e ( V)

V = 15 V

80µs PU LSE WID TH

GE

A

T , Junction Tem perature

(

°C

)

J

I = 54A

I = 27A

I = 1 4A

C

0

10

20

30

40

50

60

25 50 75 100 125 150

Max i m u m DC C o l le c to r C urre n t (A )

T , Case Tem perature (°C)

C

V = 15V

GE

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular P ulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PUL SE

(THERMAL RESPONSE)

Thermal Response (Z )

P

t

2

1

t

DM

N ote s:

1 . D u ty fac tor D = t / t

2. P e ak T = P x Z + T

12

JDM thJC C

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Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0

4

8

12

16

20

0 40 80 120 160 200

GE

V , Gate-to-Emitter Voltage (V)

g

Q , Total Gate Char

g

e

(

nC

)

A

V = 400V

I = 27A

CE

C

1.0

1.5

2.0

2.5

3.0

0 102030405060

G

T ota l Sw itching Losses (mJ)

A

R , Gate Resistance (

Ω

)

V = 480 V

V = 15V

T = 25°C

I = 2 7 A

CC

GE

J

C

0.1

1

10

-60 -40 -20 0 20 40 60 80 100 120 140 160

Total Switching Losses (mJ)

A

T , Junction Temperature

(

°C

)

J

R = 5.0

Ω

V = 15V

V = 480V

I = 54A

I = 27A

I = 14A

G

GE

CC

C

0

2000

4000

6000

8000

1 10 100

CE

C, Capacitance (pF)

V , C o llecto r-to -E m itter V o lta

g

e

(

V

)

A

V = 0 V , f = 1 MH z

C = C + C , C S H OR T E D

C = C

C = C + C

C

ies

C

res

C

oes

GE

ie s g e g c c e

re s g c

o e s c e g c

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Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

1

10

100

0.6 1.0 1.4 1.8 2.2 2.6

FM

F

Instantaneou s Forwa rd C urrent - I (A )

Forward Volta

g

e D ro p - V

(

V

)

T = 1 50 °C

T = 1 25 °C

T = 25 °C

J

1

10

100

1000

1 10 100 1000

C

CE

GE

V , C o lle ctor-to -E mitte r Vo lta g e (V )

I , Col l ector-t o-Emi t ter Current ( A)

SA FE O PERATING AR EA

V = 2 0V

T = 125°C

GE

J

0.0

2.0

4.0

6.0

8.0

0 102030405060

C

Total Sw itching Losses (m J)

I , Co lle c to r-to -E mitter Cu rre n t (A)

A

R = 5.0

Ω

T = 1 50°C

V = 480V

V = 1 5V

G

J

CC

GE

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Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

0

300

600

900

1200

1500

100 1000

f

di /dt -

(

A/

µ

s

)

RR

Q - (n C )

I = 10 A

I = 2 5 A

I = 5 0A

F

V = 200V

T = 125°C

T = 25°C

R

J

100

1000

10000

100 1000

f

d i /d t -

(

A/

µ

s

)

di(rec)M/dt - (A/µs)

I = 5 0 A

I = 25 A

I = 10 A

F

V = 200V

T = 125°C

T = 25°C

R

J

1

10

100

100 1000

f

di /dt -

(

A/

µ

s

)

I - (A)

IRRM

I = 10 A

I = 2 5 A

I = 5 0A

F

V = 200V

T = 125 °C

T = 25°C

R

J

20

40

60

80

100

120

140

100 1000

f

di /dt -

(

A/

µ

s

)

t - (ns)

rr

I = 50A

I = 25A

I = 10A

F

V = 200V

T = 125°C

T = 25°C

R

J

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t1

Ic

Vce

t1 t2

90% Ic

10% V ce

td(off) tf

Ic

5% Ic

t1+5µS

Vce ic dt

90% V ge

+Vge

∫

Eoff =

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫

Vce ie dt

t2

t1

5% V ce

Ic

Ipk

Vcc 10% Ic

Vce

t1 t2

DUT VOLTAGE

AN D CURRE NT

GATE VO LTAGE D.U.T.

+Vg

10% +Vg

90% Ic

tr

td(on)

DIO DE REVE RSE

RECO VERY ENERG Y

tx

E on =

∫

Erec = t4

t3

Vd id dt

t4

t3

DIO DE RECOVERY

WAVEFORMS

Ic

Vpk

10% V cc

Irr

10% Irr Vcc

trr

∫

Qrr = trr

tx

id d t

Same typ e

device as

D.U.T.

430µF

80%

of Vce

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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Vg GATE SIG NAL

DEVICE U NDE R T EST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CUR REN T IN D1

t0 t1 t2

D.U.T.

V *

c

50V

L

1000V

6000µF

100 V

Figure 19. Clamped Inductive Load Test

Circuit

Figure 20. Pulsed Collector Current

Test Circuit

RL=480V

4 X IC @25°C

0 - 480V

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

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D imen sion s in Millimeters and (Inches)

CONF O RMS TO JEDE C OUTLINE TO -247AC

(

TO-3P

)

- D -

5.30 (.209)

4.70 (.185)

3.65 (.143)

3.55 (.140)

2.50 (.089)

1.50 (.059)

4

3X 0.80 (.031)

0.40 (.016)

2.60 (.102)

2.20 (.087)

3.40 (.133)

3.00 (.118)

3X

0.25 (.010)

M

C

A

S

4.30 (.170)

3.70 (.145)

- C -

2X

5.50 (.217)

4.50 (.177)

5.50 (.2 17)

0.25 (.01 0)

1.40 (.056)

1.00 (.039)

D

M

B

- A -

15.90 (.626)

15.30 (.602)

- B -

123

20.30 (.800)

19.70 (.775)

14.80 (.58 3)

14.20 (.55 9)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215)

*

NOTES:

1 DIME NSIONS & T OLE RANCIN G

P E R AN SI Y 14 .5 M, 1 98 2 .

2 C O NT RO L L IN G DIM E NS IO N : IN C H .

3 D IM ENS IO N S ARE S H OWN

M IL LIM E TE R S (INCHE S ).

4 C O NF OR MS T O J E D E C OU T L IN E

T O -2 4 7A C .

LEAD ASS IG NME NTS

1 - G A TE

2 - C O L L E C T OR

3 - E M IT TE R

4 - C O L L E C T OR

*

LON G ER LE A D E D (2 0mm)

VER SION AVAILABLE (TO-247AD)

TO OR DER ADD "-E" SUFFIX

TO PAR T NUM BER

Case Outline  TO-247AC

Notes:

QRepetitive rating: VGE = 20V; pulse width limited by maximum junction temperature

(figure 20)

RVCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)

SPulse width ≤ 80µs; duty factor ≤ 0.1%.

TPulse width 5.0µs, single shot.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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Data and specifications subject to change without notice. 12/00

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Note: For the most current drawings please refer to the IR website at:

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