(SEE REVERSE SIDE) R0
2N696
NPN SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package,
designed for general purpose amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage VCBO
60 V
Collector-Emitter Voltage VCER 40 V
Emitter-Base Voltage VEBO
5.0 V
Power Dissipation PD 0.6 W
Power Dissipation (TC=25°C) PD 2.0 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
Thermal Resistance ΘJA 292 °C/W
Thermal Resistance ΘJC 87.5 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=30V 1.0 µA
ICBO V
CB=30V, TA=150°C 100 µA
BVCBO IC=100µA 60 V
BVCER IC=100mA, RBE=10Ω 40 V
BVEBO IE=100µA 5.0 V
VCE(SAT) IC=150mA, IB=15mA 1.5 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
hFE V
CE=10V, IC=150mA 20 60
fT V
CE=10V, IC=50mA, f=20MHz 40 MHz
Cob VCB=10V, IE=0, f=1.0MHz 35 pF
2N696 NPN SILICON TRANSISTOR
TO-39 PACKAGE - MECHANICAL OUTLINE
A
B
45°
D
E
C
F
J
I
LEAD #1
LEAD #2 LEAD #3
H
G
R1
MIN MAX MIN MAX
A (DIA) 0.335 0.370 8.51 9.40
B (DIA) 0.315 0.335 8.00 8.51
C - 0.040 - 1.02
D 0.240 0.260 6.10 6.60
E 0.500 - 12.70 -
F (DIA) 0.016 0.0 21 0 .41 0.53
G (DIA)
H
I 0.028 0.034 0.71 0.86
J 0.029 0.045 0.74 1.14
TO-39 (RE V: R1)
DIMENSIONS
SYMBOL INCHES MILLIMETERS
0.200
0.100 5.08
2.54
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR
