Philips Semiconductors eee e eee e eee e eee a PNP general purpose transistors Product specification BC856T; BC857T; BC858T series FEATURES PINNING * Low current (max. 100 mA) PIN DESCRIPTION e Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification especially in portable equipment. DESCRIPTION H3 3 PNP transistor in an SC-75 plastic package. : 4 NPN compiements: BC846T, BC847T and BC848T series. 1 : H 2 MARKING Top view MAM362 TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE BC856AT 3A BC857CT 3G Fig.1 Simplified outline (SC-75) and symbol. BC856BT 38 BC858AT 3J BO857AT 3E BC858sBT 3K BC857BT 3F BC858CT 3L QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBo collector-base voltage open emitter BC856AT; BC856BT - -80 Vv BC857AT; BC857BT; BC857CT - -50 Vv BC858AT; BC858BT; BC858CT - ~30 Vv VcEo collector-emitter voltage open base BC&56AT; BC856BT - ~65 Vv BC857AT; BC857BT; BC857CT - 45 Vv i BC858AT; BC858BT; BC8S58CT - -30 Vv lom peak collector current - -200 mA Prot total power dissipation Tamb < 25 C - 150 mw Nee DC current gain Io =-2 MA; Voge = -5 V 125 800 fr transition frequency lo =-10 MA; Voge = 5V; f = 100 MHz | 100 i- MHz 1997 Jul 07 339Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T, BC858T series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBo collector-base voltage open emitter BC856AT:; BC856BT - -80 Vv BC857AT; BC857BT; BC857CT - ~-50 Vv BC858AT; BC858BT; BC858CT - -30 7] VeEo collector-emitter voltage open base BC856AT; BC856BT - -~65 Vv BC857AT; BC857BT; BC857CT - -45 V BC858AT; BC858BT; BC858CT - -30 Vv VeBo emitter-base voltage open collector ~ - Vv le collector current (DC) - -100 mA tom peak collector current - -200 mA lpm peak base current - 100 mA Prot total power dissipation Tamb 25 C; note1 - 150 mw Tstg storage temperature -65 +150 Cc Tj junction temperature - 150 S Tamo operating ambient temperature -65 +150 C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth:a thermal resistance from junction to ambient | note 1 833 KAW Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Jul 07 340Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T; BC858T series CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Icuo collector cut-off current le =0; Vop = -30 V - _ -15 [nA le = 0; Vog = -30 V; T; = 150 C - _ -5 LA leo emitter cut-off current Io =0; Vep=-5 V - ~ -100 | nA Nee OC current gain Ic =-2 MA; Veg = -5 V BC856AT; BC857AT; BC858AT 125 |- 250 BC856BT; BC857BT; BC858BT 220 | - 475 BC857CT; BC858CT 420 |- 800 Veesat collector-emitter saturation voltage | lo =10 mA; Ig = -0.5 MA - - ~200 | mV Ic = -100 mA; Ig = 5 mA; note 14 - ~ -~400 | mV Vee base-emitter voltage Io =-2 MA) Vee = -5 V -00 |- ~750 |mV I =-10 MA; Voce =-5 V - - ~820 | mV Ce collector capacitance le = ig = 0; Vog = -10 V; f = 1 MHz - ~ 2.5 pF Ce emitter capacitance Io = ig = 0; Veg = ~500 mV; f = 1 MHz | - 10 - pF ft transition frequency Ie =-10 MA; Vee = -5 V3 f= 100 MHzZ{100 | - - MHz F noise figure Io = -200 HA: Voge = -5 V; Rs = 2 kQ; ] - - 10 dB f= 1 kHz; B = 220 Hz Note 1. Pulse test: tp < 300 ps; 8 < 0.02. 1997 Jul 07 341