SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEo hee VcE(sat) fr C&yp @ 10V Ic Device Type @ 10mA Typical 1MHz Continuous @25C (Vv) Min. Max. @ Ic{mA) Voce (v) Max. @ le (mA) Ig (mA) (MHz) Typical (Pe) (mA) (mW) GES5819 40 150 GES5820 60 125 GES5821 60 125 MPSAO5 60 100 MPSA06E 80 100 MPSA12 20 50 MPSA13 30 50 MPSA14 _ 30 50 MPSA20 40 MPSA5S_ 60 4 100 MPSA56 : 80 100 MPSA65 | , 30 MPSA66 30 MPS3638 25 MPS3638A 25 MPS3702 | | 26 MPS3703 30 MPS3704 30 MPS3705 30 MPS3706 20 MPS5172 25 MPS6076 | 25 MPS6512 30 MPS6513 30 MPS6514 | 25 MPS6515 25 MPS6516 40 MPS6517 40 MPS6518 MPS6519 MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 MPS6565 MPS6566 D39C1-6 D38H1-6 0391-6 D38L1-6 D38S1-10 D38Y1-3 D38ws-11 105> SILICON SIGNAL TRANSISTORS 4 COMPLEMENTARY PAIRS jy TO0-92 PACKAGE Mi DEVICE BVcEo hee VcE(SAT) NPN PNP (v) MIN.-MAX. @ Ico, Vee (V) (Vv) MAX. @ tc, I 50- 1001 100mA 1 COMPLEMENT 100mA MPS3703 50mA PS$3704 MPS3703 MPS6512 Me eeet 6 i 14 1 M 1 MPS6515 250-500 MPS6519 50-100 90-180 MPS6513 150-300 MPS6514 15 120 90-270 MPS6533 1 MPS6530 MPS6534 90-270 100-500 MPS60 76 76 1 1 60-500 D D38L1-3 D -3 D38L4-6 D39C4-6 108Silicon Transistors oo MPS6530 MPS6531 MPS6532 The MPS6530, MPS6531 and MPS6532 are silicon planar epitaxial passi- vated NPN transistors designed for general purpose switching and amplifier applications. absolute maximum ratings: (T, = 25C unless otherwise specified) Voltages MPS6530 & 31 MPS6532 Collector to Emitter VcFo 40 30 Volts Collector to Base VcBoO 60 50 Volts Emitter to Base VeBo 5 5 Volts Current Collector Ic 600 600 mA Dissipation Total Power Ty < 25C Py 350 350 =m Watts Total Power Tc < 25C Pr 1.0 1.0 Watts Derate Factor Ta > 25C 2.80 2.80 mW/C Derate Factor Tc > 25C 8.0 8.0 mW/C Temperature Operating Ty -55C to +150C C Storage TstG -55C to +150C C Lead (1/16" + 1/32 from Ty +230C C case for 10 sec.) | Ly Q lo A NOTES: -+| L {EMITTER 2.BASE TO-92 3. COLLECTOR 7 1 407] 482/016/019| 3 1. THREE LEADS 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE THIS SIDE. S.(THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. @b APPLIES BETWEEN Lo AND 12.70 MM (.500") FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED INL, AND BEYOND |2.70MM (500 FROM SEATING PLANE. me we ee eee ee ae ee ee ee a ae eee ee electrical characteristics: (Ts = 25C unless otherwise specified) Static Characteristics SYMBOL Collector-Emitter Breakdown Voltage (Ic = 10mA, Ip = 0) MPS6530, MPS6531 Vipr)CEO (Ic = 10mA, VBE = 0) MPS6532 V(BR)CEO Collector-Base Breakdown Voltage (Ic = 10uA, Ip = 0) MPS6530, MPS6531 V(BR)CBO (Ic = 10uA, Ip = 0) GPS6532 ViBR)CBO Emitter-Base Breakdown Voltage (Ie = 10pA, Ic = 0) V(BR)EBO Collector Cutoff Current (Veg = 40V, Ip = 0) _ MPS6530, MPS6531 Icgpo (Vop = 30V, Ip = 0) MPS6532 Icgo (Vcp = 40V, Ip = 0, Ta, = 60C) MPS6530, MPS6531 IcRo (Vop = 30V, Ip = 0 T, = 60C) MPS6532 IcRo Emitter-Base Reverse Current (VER = 4V, Ic = 0) lgBo Forward Current Transfer Ratio (Vcz = 1V,Ig = 10mA) MPS6530 hye (Vee = 1V, Ic = 10mA) MPS6531 hee (Vcg = 1V, Ic = 100mA) MPS6530 Ther 1368 MIN. 40 30 60 50 30 60 40 MAX. UNITS Volts Volts _ Volts Volts Volts 50 nA 100 nA 2 UA 5 LA 100 nA 120MPS6530, MPS6531, MPS6532 Static Characteristics (continued) SYMBOL MIN. MAX. UNITS Forward Current Transfer Ratio (continued) (Vcge = 1V, Ic = 100mA) -- MPS6531 thee 90 270 (Vcg = 1V, Ic = 100mA) -- MPS6532 ther 30 _ (Vcr = 1OV, I = 500mA) -- MPS6530 thpg 25 _ (Vcr = 10V, I = 500mA) - MPS6531 thre 50 ~ Collector-Emitter Saturation Voltage (Ic = 100mA, Ip = 10mA) -- MPS6530, MPS6532 VcE(sat) = 5 Volts (ic = 100mA, Ip = 10mA) -- MPS6531 VeR(sat) _ 3 Volts Base-Emitter Saturation Voltage (Ic = 100mA, Ip = 10mA) ~ MPS6530, MPS6531 VoE(at) _ 1 Volts (Ic = 100mA, Ip = 10mA) ~ MPS6532 Veg (sat) - 1.2 Volts Dynamic Characteristics Collector-Base Capacitance (Vcp = 10V, Ip = O,f = 1 MHz) Cop ~ 5 pF yPulse width < 300 psec., Duty Cycle < 2%. 1369