Features
•Integrated 600V half-bridge gate driver
•15.6V zener clamp on Vcc
•T rue micropower start up
•Tighter initial deadtime control
•Low temperature coefficient deadtime
•Shutdown feature (1/6th Vcc) on CT pin
•Increased undervoltage lockout Hysteresis (1V)
•Lower power level-shifting circuit
•Constant LO, HO pulse wid ths at st artup
•Lower di/dt gate driver for better noise immunity
•Low side output in phase with RT
•Internal 50nsec (typ.) bootstrap diode (IR2153D)
•Excellent latch immunity on all inputs and outputs
•ESD protection on all leads
•Also available LEAD-FREE
(NOTE:For new designs, we recommend
IR’s new product IRS2153D)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
VOFFSET 600V max.
Duty Cycle 50%
Tr/Tp80/40ns
Vclamp 15.6V
Deadtime (typ.) 1.2 µs
Typical Connections
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(S) IR2153D
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(D)(S) &( PbF)
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer . The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally , special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
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Packages
8 Lead PDIP 8 Lead SOIC
Data Sheet No. PD60062 revO
IR2153(D)(S) & ( PbF)
2www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Note 2: Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
VBsHigh side floating supply voltage VCC - 0.7 V CLAMP
VSSteady state high side floating supply offset voltage -3.0 (note 2) 600
VCC Supply voltage 10 VCLAMP
ICC Supply current (note 3) 5 mA
TJJunction temperature -4 0 125 °C
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
VBHigh side floating supply voltage -0.3 625
VSHigh side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VLO Low side output volt age -0.3 VCC + 0.3
VRT RT pin voltage -0.3 VCC + 0.3
VCT CT pin voltage -0.3 VCC + 0.3
ICC Supply current (note 1) — 25
IRT RT pin current -5 5
dVs/d t Allowable offset voltage slew rate -50 50 V/ns
PDMaximum power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
RthJA Thermal resistance, junction to ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
TJJunction temperature -55 150
TSStorage temperature -55 150 °C
TLLead temperature (soldering, 10 seconds) — 3 00
V
°C/W
W
mA
IR2153(D)(S) & ( PbF)
www.irf.com 3
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Symbol Component Min. Max. Units
RTTiming resistor value 10 — kΩ
CTCT pin capacitor value 330 — pF
Recommended Component Values
IR2153 RT vs Frequency
10
100
1000
10000
100000
1000000
10 100 1000 10000 100000 1000000
RT (ohms)
Frequency (Hz)
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values
IR2153(D)(S) & ( PbF)
4www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Floating Supply Characteristics
Symbol Definition Min. Typ . Max. Unit s Test Conditions
IQBSUV Micropower startup VBS supply current — 0 10 VCC ≤ VCCUV-
IQBS Quiescent VBS supply current — 30 50
VBSMIN Minimum required VBS voltage for proper — 4.0 5.0 V VCC=VCCUV+ + 0.1V
functionality from RT to HO
ILK Offset supply leakage current — — 50 μAV
B = VS = 600V
VFBootstrap diode forward voltage (IR2153D) 0.5 — 1.0 V IF = 250mA
μA
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
VCCUV+ Rising VCC undervoltage lockout threshold 8.1 9.0 9.9
VCCUV- Falling VCC undervoltage lockout threshold 7.2 8.0 8.8
VCCUVH VCC undervoltage lockout Hysteresis 0.5 1.0 1.5
IQCCUV Micropower startup VCC supply current — 75 150 VCC ≤ VCCUV-
IQCC Quiescent VCC supply current — 500 950
VCLAMP VCC zener clamp voltage 14.4 15.6 16.8 V ICC = 5mA
Low Voltage Supply Characteristics
V
μA
Symbol Definition Min. Ty p. Max. Units Test Conditions
fosc Oscillator frequency 19.4 20 20.6 RT = 36.9kΩ
94 100 106 RT = 7.43kΩ
d RT pin duty cycle 48 50 52 % fo < 100kHz
ICT CT pin current — 0.001 1.0 uA
ICTUV UV-mode CT pin pulldown current 0.30 0.70 1.2 mA VCC = 7V
VCT+ Upper CT ramp voltage threshold — 8.0 —
VCT- Lower CT ramp voltage threshold — 4.0 —
VCTSD CT voltage shutdown threshold 1.8 2.1 2.4
VRT+ High-level RT output voltage, VCC - VRT — 10 50 I
RT = 100μA
— 100 3 0 0 IRT = 1mA
VRT- Low-level RT output voltage — 10 50 I
RT = 100μA
— 100 3 0 0 IRT = 1mA
VRTUV UV-mode RT output voltage — 0 100 VCC ≤ VCCUV-
VRTSD SD-Mode RT output voltage, VCC - VRT — 10 50 I
RT = 100μA,
VCT = 0V
— 10 300 IRT = 1mA,
VCT = 0V
Oscillator I/O Characteristics
V
mV
kHz
IR2153(D)(S) & ( PbF)
www.irf.com 5
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Symbol Description
VCC Logic and internal gate drive supply voltage
RTOscillator timing resistor input
CTOscillator timing capacitor input
C O M IC power and signal ground
LO Low side gate driver output
VSHigh voltage floating supply return
HO High side gate driver output
VBHigh side gate driver floating supply
Lead Definitions
Lead Assignments
8 Lead PDIP 8 Lead SOIC
IR2153D IR2153(S)
NOTE: The IR2153D is offered in 8 lead PDIP only.
Symbol Definition Min. Typ. Max. Units Test Conditions
VOH High level output voltage, VBIAS -VO— 0 100 IO = OA
V OL Low-level output voltage, VO — 0 100 IO = OA
VOL_UV UV-mode output voltage, VO — 0 100 IO = OA
VCC ≤ VCCUV-
tr Output rise time — 80 150
tf Output fall time — 45 100
tsd Shutdown propogation delay — 660 —
td Output deadtime (HO or LO) 0.75 1.20 1.65 μsec
Gate Driver Output Characteristics
mV
nsec
Electrical Characteristics (cont.)
IR2153(D)(S) & ( PbF)
6www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Functional Block Diagram for IR2153(S)
Functional Block Diagram for IR2153D
VB
PULSE
GEN
DELAY
HV
LEVEL
SHIFT
VCC
PULSE
FILTER
DEAD
TIME
LO
VS
COM
R
S
Q
15.6V
CT
RT
UV
DETECT
RQ
SQ
DEAD
TIME
HO
LOGIC
-
-
-
+
+
+
R
R
R/2
R/2
D1
NOTE: The D1 is a separate die.
VB
PULSE
GEN
DELAY
HV
LEVEL
SHIFT
VCC
PULSE
FILTER
DEAD
TIME
LO
VS
COM
R
S
Q
15.6V
CT
RT
UV
DETECT
RQ
SQ
DEAD
TIME
HO
LOGIC
-
-
-
+
+
+
R
R
R/2
R/2
IR2153(D)(S) & ( PbF)
www.irf.com 7
NOTE:For new designs, we recommend
IR’s new product IRS2153D
8 Lead SOIC 01-0021 08
8 Lead PDIP 01-3003 01
IR2153(D)(S) & ( PbF)
8www.irf.com
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Figure 1. Input/Output Timing Diagram
Figure 3. Deadtime Waveform Definitions
RT
HO
50% 50%
90%
10%
LO 90%
10%
DT
LO
R
T
C
T
Vcc
Vccuv+ V
CLAMP
R
T
,C
T
1/3
2/3
HO
td
td
Figure 2. Switching Time Waveform Definitions
(HO)
(LO)
IR2153(D)(S) & ( PbF)
www.irf.com 9
NOTE:For new designs, we recommend
IR’s new product IRS2153D
LEADFREE PART MARKING INFORMATION
ORDER INFORMATION
Basic Part (Non-Lead Free)
8-Lead PDIP IR2153 order IR2153
8-Lead SOIC IR2153S order IR2153S
8-Lead PDIP IR2153D order IR2153D
Leadfree Part
8-Lead PDIP IR2153 order IR2153PbF
8-Lead SOIC IR2153S order IR2153SPbF
8-Lead PDIP IR2153D order IR2153DPbF
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice. 2/8/2006
Lead Free Released
Non-Lead Free
Released
Part number
Date code
IRxxxxxx
YWW?
?XXXX
Pin 1
Identifier
IR logo
Lot Code
(Prod mode - 4 digit SPN code)
Assembly site code
Per SCOP 200-002
P
?MARKING CODE
