SUP/SUB75N06-07L
Vishay Siliconix
Document Number: 70776
S-05111—Rev. F, 10-Dec-00 www.vishay.com
2-1
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (W) ID (A)
0.0075 @ VGS = 10 V a
60 0.0085 @ VGS = 4.5 V 75a
D
G
S
N-Channel MOSFET
TO-220AB
Top View
GDS
DRAIN connected to TAB
TO-263
SDG
Top View
SUP75N06-07L
SUB75N06-07L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS "20 V
Continuous Drain Current TC = 25_C 75a
Continuous Drain Current
(TJ = 175_C) TC = 125_CID55
Pulsed Drain Current IDM 240 A
Avalanche Current IAR 60
Repetitive A valanche EnergybL = 0.1 mH EAR 280 mJ
TC = 25_C (TO-220AB and TO-263) 250c
Power Dissipation TA = 25_C (TO-263)dPD3.7 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d40
Junction-to-Ambient Free Air (TO-220AB) RthJA 62.5 _C/W
Junction-to-Case RthJC 0.6
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
SUP/SUB75N06-07L
Vishay Siliconix
www.vishay.com
2-2 Document Number: 70776
S-05111—Rev. F, 10-Dec-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 mA
DSS VDS = 60 V, VGS = 0 V, TJ = 175_C 250
m
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0061 0.0075
aVGS = 4.5 V, ID = 20A 0.0071 0.0085
W
Drain-Source On-State ResistancearDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.012
W
VGS = 10 V, ID = 30 A, TJ = 175_C 0.015
Forward Transconductanceagfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 6300
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF
Reverse Transfer Capacitance Crss 350
Total Gate ChargecQg75 120
Gate-Source ChargecQgs VDS = 30 V, VGS = 10 V, ID = 75 A 18 nC
Gate-Drain ChargecQgd
DS ,GS D27
Turn-On Delay Timectd(on) 14 40
Rise TimectrV
DD
= 30 V, R
L
= 0.47 W15 40
Turn-Off Delay Timectd(off)
VDD = 30 V, RL = 0.47
W
ID ^ 75 A, VGEN = 10 V, RG = 2.5 W150 300 ns
Fall Timectf50 100
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current IS75
Pulsed Current ISM 240 A
Forward VoltageaVSD IF = 75 A , VGS = 0 V 1.0 1.3 V
Reverse Recovery Time trr 67 120 ns
Peak Reverse Recovery Current IRM(REC) IF = 75 A, di/dt = 100 A/ms6 8 A
Reverse Recovery Charge Qrr
F
m
0.2 0.48 mC
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SUP/SUB75N06-07L
Vishay Siliconix
Document Number: 70776
S-05111—Rev. F, 10-Dec-00 www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
60
90
120
150
180
0 20406080100
Ciss
Crss
–55_C
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
– Gate-to-Source Voltage (V) – On-Resistance (
Qg – Total Gate Charge (nC)
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
rDS(on) Ω)VGS
VGS – Gate-to-Source Voltage (V)
– Transconductance (S)gfs
0
50
100
150
200
250
0246810
0
2000
4000
6000
8000
10000
0 102030405060 0
4
8
12
16
20
0 25 50 75 100 125
0.000
0.002
0.004
0.006
0.008
0.010
0 20406080100
0
50
100
150
200
012345
25_C–55_C
4 V
VDS = 30 V
ID = 75 A
VGS = 10 thru 5 V
VGS = 10 V
VGS = 4.5 V
Coss
25_C
125_C
3 V
TC = 125_C
SUP/SUB75N06-07L
Vishay Siliconix
www.vishay.com
2-4 Document Number: 70776
S-05111—Rev. F, 10-Dec-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
(Normalized)
– On-Resistance (
TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)
rDS(on) Ω)
– Source Current (A)IS
0.4
0.7
1.0
1.3
1.6
1.9
2.2
–50 –25 0 25 50 75 100 125 150 175
100
10
10.3 0.6 0.9 1.2 1.5
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
0
THERMAL RATINGS
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01 10–510–410–310–210–11
Normalized Ef fective Transient
Thermal Impedance
3
Safe Operating Area
Maximum A valanche and Drain Current
vs. Case Temperature
TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
– Drain Current (A)ID
100
500
10
1
0
20
40
60
80
100
0 25 50 75 100 125 150 175
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
10 ms
100 ms
1 ms
10 ms
100 ms
dc
TC = 25_C
Single Pulse
Limited
by rDS(on)
0.1 1 10 100
