MEDIUM POWER PHASE
CONTROL THYRISTORS Power Modules
50 A
70 A
90 A
T..RIA SERIES
1
Bulletin I27105 rev. A 09/97
www.irf.com
Parameters T50RIA T70RIA T90RIA Units
Major Ratings and Characteristics
IT(AV) 50 70 90 A
@ TC70 70 70 oC
IT(RMS) 80 110 141 A
ITSM @ 50Hz 1310 1660 1780 A
@ 60Hz 1370 1740 1870 A
I2t @ 50Hz 8550 13860 15900 A2s
@ 60Hz 7800 12650 14500 A2s
I2√t 85500 138500 159100 A2√s
VDRM/VRRM 100 to 1200 V
TJ-40 to 125 oC
Features
Electrically isolated base plate
Types up to 1600 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Description
T..RIA Series
2
Bulletin I27105 rev. A 09/97
www.irf.com
IT(AV) Max. average on-state current 5 0 7 0 9 0 A 180° conduction, half sine wave
@ Case temperature 70 70 70 °C
IT(RMS) Max. RMS on-state current 80 1 10 141 A
ITSM Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage
on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied
surge current 1100 1400 1500 t = 10ms 100% VRRM
1150 1460 1570 t = 8.3ms reapplied Sine half wave,
I2t Maximum I2t for fusing 8550 13860 15900 A2s t = 10ms No voltage Initial T J = TJ max.
7800 12650 14500 t = 8.3ms reapplied
6050 9800 11250 t = 10ms 100% VRRM
5520 8950 10270 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 85500 138500 159100 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 0.97 0.77 0.78 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.13 0.88 0.88 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 4 .1 3 .6 2 .9 mΩ(16.7% x π x I T(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 3 . 3 3 . 2 2. 6 ( I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 1.60 1.55 1.55 V ITM = π x IT(AV), T J = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
IHMaximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C
ILMaximum latching current 400 mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
tgd Typical turn-on time 0. 9 µ s TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr Typical reverse recovery time 3. 0 µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
tqTypical turn-off time 110 µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%V DRM
Parameter T50RIA T70RIA T90RIA Units Conditions
On-state Conduction
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code peak reverse voltage peak reverse voltage @ 25°C
VVµA
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300
Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
T..RIA Series
3
Bulletin I27105 rev. A 09/97
www.irf.com
TJMax. junction operating -40 to 125 ° C
temperature range
Tstg Max. storage temperature -40 to 150 ° C
range
RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction
junction to case
RthCS Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat and greased
case to heatsink
T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2)
torque ± 10% terminals 3 ± 1 0% M5 screw terminals
wt Approximate weight 54 g See outline table
Case style D-56 T type
IRRM Maximum peak reverse and 1 5 mA TJ = TJ = TJ max.
IDRM off-state leakage current
VINS RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
dv/dt Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated VDRM (1)
voltage
Blocking
Thermal and Mechanical Specifications
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Parameter T50RIA T70RIA T90RIA Units Conditions
Parameter T50RIA T70RIA T90RIA Units Conditions
Triggering
PGM Max. peak gate power 10 12 12 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power 2.5 3.0 3.0 W f=50Hz, TJ = TJ max.
IGM Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative 10 10 10 V
gate voltage
VGT Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1 Ω
1.5 1.5 1.5 TJ = TJ max.
IGT Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
current to trigger 100 120 120 mA TJ = 25°C load; Ra = 1 Ω
50 60 60 TJ = TJ max.
VGD Max. gate voltage 0.2 0.2 0.2 V @ TJ = TJ max., rated VDRM applied
that will not trigger
IGD Max. gate current 5.0 6.0 6.0 mA
that will not trigger
di/dt Max. rate of rise of 200 A/µs VD = 0.67 rated VDRM, ITM = 2 x rated di/dt
turned-on current 180 Ig = 400mA for T50RIA and Ig = 500mA for
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
Parameter T50RIA T70RIA T90RIA Units Conditions
non lubricated
threads
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90
T..RIA Series
4
Bulletin I27105 rev. A 09/97
www.irf.com
Sinusoidal conduction @ T J max. Rectangular conduction @ TJ max.
Devices Units
180o120o90o60o30o180o120o90o60o30o
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K/W
T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
All dimensions in millimeters (inches)
Outline Table
Device Code
1
T 50 RIA 120
Circuit configuration **
234
1- Module type
2- Current rating
3- Circuit configuration **
4- Voltage code : code x 10 = VRRM
Ordering Information Table
G
T..RIA Series
5
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
DC
30°60° 90°120° 180°
A verage On-state Current (A )
Maxim um Allowable Case Temperature (°C)
Conduction Period
T 50RIA.. Series
R (DC) = 0.65 K /W
thJC
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
10 K/W
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
R = 0.1 K/W - Delta R
thSA
0
10
20
30
40
50
60
70
80
0 1020304050
RM S Limit
Co nd uc tion A n gl e
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
A verage On-state Curren t (A)
T50RIA.. Series
T = 125°C
J
020406080100120
M aximum Allowable Am bient Tem perature (°C)
R = 0.1 K/W - Delta R
thSA
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0
10
20
30
40
50
60
70
80
90
100
110
0 1020304050607080
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Ma xim um A v era ge On-state P ow er L oss (W)
A verage On-state Curr ent (A)
T50RIA.. Series
T = 125°C
J
50
60
70
80
90
100
110
120
130
0 102030405060
30°60° 90° 120° 180°
Ave rage O n- sta te Curren t (A )
Maximum A llowable Case Te m perature (°C)
C onduction A ngle
T50R IA.. Series
R ( DC ) = 0.65 K/W
thJC
T..RIA Series
6
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 9 - Gate Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
500
600
700
800
900
1000
1100
1200
110100
Nu m b er Of Eq ual Amplitu de H al f Cy cle Current Pul se s (N )
Peak Ha lf Sine Wave On-st a te C urrent ( A)
T50R IA.. Se rie s
I n itia l T = 1 2 5 °C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
A t Any Rated Load Condition And With
Rated V A pplied Following Surge.
RRM J
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
Peak H a l f S i n e Wave On- s tat e Curre n t ( A)
P ulse Train Dura tion (s )
Maximum Non Repetitive Surge Current
V ersus Pulse Train Dura tion. Control
Of Conduc tion M ay Not Be Main tained.
I nitia l T = 12 5°C
No V oltage Reapplied
Rat ed V R eapp lied
RRM
J
T5 0RI A.. Series
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
0.511.522.533.544.5
T = 25°C
J
Instantaneous On- state Cur rent (A )
I nstantan eous On-s tate Vo ltag e (V)
T50RIA.. Series
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
Tj= 125 °C
Tj= -40 °C
(1) (2)
In s tan taneo us Gat e Curr ent (A)
Instantaneous Gate Voltage (V)
a) Re com m e nde d load line fo r
b) Recommended load line for
R ec tan gu lar gat e pulse (1) PGM = 10W , tp = 5ms
(2) PGM = 20W , tp = 2ms
(3) PGM = 50W , tp = 1ms
(4) PGM = 100W, tp = 500µs
<=3 0% rat ed di/ dt : 20 V, 6 5ohms
tr=1µs, tp>=6µs
T50RIA.. S er ies F requ ency Limited by PG(A V)
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
(3) (4)
T..RIA Series
7
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 15 - On-state Power Loss Characteristics
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100120
DC
30°60° 90°120°180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Co nduction Period
T70R IA.. Series
R ( DC ) = 0.50 K /W
thJC
0 20 40 60 80 100 120
M axim um Allow able Ambient Temperature (°C)
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.7 K/W
0.5 K/W
1 K/W
1.5 K/W
2 K/W
3 K/W
5 K/W
7 K/W
0
10
20
30
40
50
60
70
80
90
100
0 10203040506070
RM S Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Av erage On -s tate Cur rent (A)
T70RI A.. Series
T = 125°C
J
0 20 40 60 80 100 120
M axim um Allowable Ambie nt Tem perature (°C)
5 K/W
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0
20
40
60
80
100
120
140
0 20406080100120
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
M axim um Avera ge O n -s tat e Pow er Lo ss (W)
Avera g e On-state Curre nt (A)
T70RIA.. Se ries
T = 125°C
J
Fig. 18 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050607080
30°60° 90° 120° 180°
A verage On-state Curre nt (A)
Ma x imum Allowable Case Temperature (°C)
Conduction Angle
T 70RIA.. S er ies
R ( DC) = 0.50 K/W
thJC
T..RIA Series
8
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 19 - Gate Characteristics
Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current
Fig. 10 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf Sine Wave On- sta te Current (A)
T 70RI A.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
I nitial T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
RRM
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
0.01 0.1 1
Peak Half S ine Wave On-stat e Curre n t ( A)
Pu lse T rain Dur ation (s )
Maximum Non Repetitive Surge Current
V ersus Pulse T r ain Duration. Control
Of Con duction Ma y Not B e Maint ained.
I nitia l T = 125 °C
No V olt age R eapplied
R ated V Reapplie d
RRM
J
T 70RIA.. Series
1
10
100
1000
00.511.522.533.54
T = 25°C
J
Instantaneo us On-state Current (A)
Instanta neous On-s tate Voltage (V )
T 70RIA.. Serie s
T = 125°C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
VGD
IGD
(b) (a)
Tj=25 °C
T j=125 °C
Tj=-40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load l ine for
b) Recommended load line for
Rectangular gate pulse
T70RIA.., T90RIA.. Series Freque nc y Limited by PG(A V)
tr=1µ s, tp > =6 µs
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
<=30% rated di/dt : 15V, 40ohm s
(1) PG M = 12W , tp = 5ms
(2) PG M = 30W , tp = 2ms
(3) PG M = 60W , tp = 1ms
(4) PGM = 200W, tp = 3 00µs
(3) (4)
T..RIA Series
9
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 29 - On-state Power Loss Characteristics
Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100120140160
DC
30°60°90°
120°180°
Average On-state Current (A)
M ax im u m A llowa b le Cas e Te m peratu re ( °C)
Co nduction Period
T 90R IA. . S eries
R (DC) = 0 .38 K/ W
thJC
0 20406080100120
Max imum Allowable Am bient Temperatu re (°C)
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
2 K/W
3 K/W
0
20
40
60
80
100
120
140
0102030405060708090
RMS Limit
Co nd uc tio n A ng le
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
A verage O n-s tat e Cur rent (A )
T 90RIA Series
T = 125°C
J
0 20406080100120
Maximum Allowabl e Ambient Temperat ure (°C)
R = 0. 1 K/W - De l t a R
thSA
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
2 K/W
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
A verage On-state Current (A )
T 90RIA.. Series
T = 125°C
J
Fig. 29 - On-state Power Loss Characteristics
50
60
70
80
90
100
110
120
130
0 20406080100
30°60° 90° 120° 180°
A verage On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
T90RIA.. Series
R ( DC) = 0.3 8 K/W
thJC
T..RIA Series
10
Bulletin I27105 rev. A 09/97
www.irf.com
Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current
Fig. 21 - On-state Voltage Drop Characteristics
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Numbe r O f E q ual A m p lit ud e Ha lf C ycle C urre nt P uls e s (N )
Pe a k H alf Sine Wave On-st a te Curre n t ( A)
T90RIA.. Series
A t Any Rated Load Condition And With
Rated V A pplied Following Surge.
I nitia l T = 125°C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
RRM J
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
0.01 0.1 1
Peak H alf Sine Wave On-state Current (A)
P ulse T rain Duration (s )
Ma x imu m N on Repetitive S urge Curren t
V ersus Pulse T rain Duration . Contro l
Of Co nduction M ay Not Be Maintained.
Initial T = 125°C
No V oltage Reapplie d
Rated V Reapplie d
RRM
J
T 90RIA.. S er ies
1
10
100
1000
00.511.522.533.5
T = 25°C
J
In stanta neous On-s tat e Curr ent (A)
Instant aneous On- state Voltag e (V)
T90RIA.. Series
T = 125°C
J
Fig. 34 - Thermal Impedance ZthJC Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10 100
S qua re Wav e P uls e D urat ion (s )
thJC
Transient Thermal Impedance Z (K/W)
S teady State V alue
R = 0 .65 K/W
R = 0 .50 K/W
R = 0 .38 K/W
(DC O peration)
thJC
thJC
thJC
T50RIA.. S eries
T 70R IA. . Ser ies
T 90 R IA .. S er ie s
