PDM1102H P2HM1102H MOSFET 110A 250V P2HM1102H P2HM1102H PDM1102H 108.0 108.0 Approximate Weight :220g Approximate Weight :220g Maximum Ratings Rating VDSS Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage Mounting Torque Grade PDM1102H / P2HM1102H 250 Symbol VGS=0V Unit V VGSS 20 V ID 110c=25 80c=25 A IDM 220c=25 A PD 420c=25 W Tjw -40+150 Tstg -40+125 Viso Ftor 2000 - ,AC1 Terminals to Base, AC 1 min . 3.0 Module Base to Heat sink 2.0 Bus bar to Main Terminals 1 http://store.iiic.cc/ V Nm Electrical CharacteristicsTC25 unless otherwise noted Characteristic Symbol Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current MOSFET Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Value Min. Typ. Max. Unit VDSVDSS, VGS0V 1 Tj125, VDSVDSS, VGS0V 4 VDSVGS, ID3mA 2 3.3 4 V VGS10V, VDS0V 0.3 A rDS on VGS10V, ID55A 29 33 m VDS on VGS10V, ID55A 2.2 2.4 V gfg VDS15V, ID55A 55 S 13 nF 2.3 nF Crss 0.36 nF ton d 140 ns 200 ns 230 ns 80 ns IDSS VGSth IGSS Ciss Coss tr toff d VGS0V VDS25V f1MHz VDD1/2VDSS ID55A VGS-5V, 10V RG5 tf mA Source-Drain Diode Ratings and CharacteristicsTC25 unless otherwise noted Characteristic Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Condition Symbol IS Condition D. C. ISM VSD trr Qr IS110A IS110A -diS/dt100A/s Maximum Value Min. Typ. Max. Unit 80 A 220 A 1.4 V 75 ns 0.15 C Thermal Characteristics Characteristic Symbol - Thermal Resistance, Junction to Case Rth j-c - Thermal Resistance, Case to Heatsink Rth c-f Condition Maximum Value Min. Typ. Max. MOSFET 0.30 Diode 2.0 Mounting surface flat, smooth, and greased 0.1 332 http://store.iiic.cc/ Unit /W TC=25 250s Pulse Test VGS=10V 8V 160 7V 120 80 6V 40 5V 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS (V) 25A 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 18 Ciss 12 6 10 8 ID=110A 6 55A 4 25A 2 0 -40 16 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 2 12 8 4 1 0.5 td(off) tr 0.2 td(on) 0.1 tf 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 600 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics RG=5 VDD=48V TC=25 80s Pulse Test 1000 0.05 2 IS=110A 100 tf 50 100 tf 50 20 5 2 10 20 50 DRAIN CURRENT ID (A) 100 200 Fig. 10 Maximum Safe Operating Area TC=25 Tj=150MAX Single Pulse 500 10 2 5 10 20 50 DRAIN CURRENT ID (A) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) 10s 200 DRAIN CURRENT ID (A) 100 100s 50 20 Operation in this area is limited by RDS (on) 10 5 10ms DC 1 2 5 10 20 50 100 200 DRAIN TO SOURCE VOLTAGE VDS (V) 50 20 10 100 200 500 IR 0 Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 333 http://store.iiic.cc/ 100 200 -dis/dt (A/s) 300 400 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=0.30/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 1ms 2 0.5 0.5 100 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 10 td(on) NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 20 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) SWITCHING TIME t (ns) SWITCHING TIME t (ns) td(on) tr td(off) 200 IS=80A Tj=125 trr 200 tr 200 Fig. 9 Typical Reverse Recovery Characteristics 500 td(off) 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) RG=5 VDD=48V TC=25 80s Pulse Test 1000 500 200 160 ID=55A VDD=48V TC=25 80s Pulse Test 5 VDD= 48V 125V 200V Coss 0 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance ID=80A 16 GATE TO SOURCE VOLTAGE VGS (V) 24 CAPACITANCE C (nF) 55A 2 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage VGS=0V f=1MHz 30 ID=110A 4 0 10 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 6 VGS=10V 250s Pulse Test 12 SWITCHING TIME t (s) 200 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature TC=25 250s Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 240 DRAIN CURRENT ID (A) Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig. 1 Typical Output Characteristics 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 2 1 0.5 0.2 0.1 Per Unit Base Rth(j-c)=2.0/W 1 Shot Pulse 0.05 0.02 0.01 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10