1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C5A
IDM TC= 25°C, pulse width limited by TJM 20 A
PDTC= 25°C 180 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
Standard
Power MOSFET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
G = Gate, D = Drain,
S = Source, TAB = Drain
DG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 250 µA 2 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 250 µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 5N100 2.4 Ω
5N100A 2.0 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
VDSS ID25 RDS(on)
IXTH / IXTM 5N100 1000 V 5 A 2.4 Ω Ω
Ω Ω
Ω
IXTH / IXTM 5N100A 1000 V 5 A 2.0 ΩΩ
ΩΩ
Ω
Features
l
International standard packages
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
93009C (4/96)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
IXTH 5 N100 IXTH 5 N100A
IXTM 5 N100 IXTM 5 N100A
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 4 6 S
Ciss 2600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1 80 p F
Crss 45 pF
td(on) 35 100 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 20 50 ns
td(off) RG = 4.7 Ω, (External) 10 0 2 0 0 ns
tf30 80 ns
Qg(on) 88 130 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 21 30 nC
Qgd 38 70 nC
RthJC 0.7 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 5 A
ISM Repetitive; pulse width limited by TJM 20 A
VSD IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 9 00 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
∅b .97 1.09 .038 .043
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
TO-204AA (IXTM) Outline
Pins 1 - Gate 2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXTH 5 N100 IXTH 5 N100A
IXTM 5 N100 IXTM 5 N100A
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Norm alized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 VGS(th) BVDSS
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
1
2
3
4
5
6
7
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norma lized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0246810
R
DS(on)
- Ohms
1.8
2.0
2.2
2.4
2.6
2.8
3.0
VGS = 15V
VGS = 10V
VGS - V o lts
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
I
D
- Amperes
0
1
2
3
4
5
6
7
8
9
VDS - Vo l t s
0 5 10 15 20 25 30
I
D
- Amperes
0
1
2
3
4
5
6
7
8
97V
VGS = 10V
ID = 2.5A
6V
TJ = 25°C
TJ = 25°C
TJ = 25°C
5N100A
5N100
4 - 4
© 2000 IXYS All rights reserved
IXTH 5 N100 IXTH 5 N100A
IXTM 5 N100 IXTM 5 N100A
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
VDS - V olts
1 10 100 1000
I
D
- Ampe re s
0.1
1
10
Gate Charge - nCoulombs
0 1020304050607080
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
0
1
2
3
4
5
6
7
8
9
VCE - V olts
0 5 10 15 20 25
Capacitance - pF
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.010
0.100
1.000
Crss
Coss
Ciss
10µs
100µs
1ms
10ms
100ms
Single Pulse
Limited by RDS(on)
VDS = 50 0V
ID = 2.5A
IG = 10mA
f = 1 MHz
VDS = 25V
TJ = 125°C
TJ = 25°C
D=0.5
D=0.05
D=0.02
D=0.1
D=0.01
D=0.2
