LESHAN RADIO COMPANY, LTD.
O14–1/5
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 40 Vdc
Collector–Base V oltage V CBO 60 Vdc
Emitter–Base V oltage V EBO 6.0 Vdc
Collector Current — Continuous I C600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V (BR)CEO Vdc
(I C = 1.0 mAdc, I B = 0) 40 —
Collector–Base Breakdown V oltage V (BR)CBO Vdc
(I C = 0.1 mAdc, I E = 0) 60 —
Emitter–Base Breakdown V oltage V (BR)EBO Vdc
(I E = 0.1 mAdc, I C = 0) 6.0 —
Base Cutoff Current I BEV µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc) — 0.1
Collector Cutoff Current I CEX µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc) — 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBT4401LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
O14–2/5
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol M in Max Unit
ON CHARACTERISTICS ( 3 )
DC Current Gain hFE ––
(I C = 0.1 mAdc, V CE = 1.0 Vdc) 20 ––
(I C = 1.0 mAdc, V CE = 1.0 Vdc) 40 ––
(I C = 10 mAdc, V CE = 1.0 Vdc) 80 ––
(I C = 150 mAdc, V CE = 1.0 Vdc) 100 300
(I C = 500 mAdc, V CE = 2.0 Vdc) 40 ––
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) –– 0.4
(I C = 500 mAdc, I B = 50 mAdc) –– 0.75
Base–Emitter Saturation V oltage V BE(sat) Vdc
(I C = 150 mAdc, I B = 15 mAdc) 0.75 0.95
(I C = 500 mAdc, I B = 50 mAdc) –– 1.2
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) 250 ––
Collector–Base Capacitance C cb pF
(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) –– 6.5
Emitter–Base Capacitance C eb pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) –– 30
Input Impedance h ie kΩ
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 15
V oltage Feedback Ratio h re X 10 –4
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 0.1 8.0
Small–Signal Current Gain h fe —
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 40 500
Output Admittance h oe µmhos
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 30
SWITCHING CHARACTERISTICS
Delay T ime (V CC = 30 Vdc, V EB = 2.0 Vdc t d—15
Rise T ime I C = 150 mAdc, I B1 = 15 mAdc) t r—20ns
Storage T ime (V CC = 30 Vdc, I C = 150 mAdc t s— 225 ns
Fall Time I B1 = I B2 = 15 mAdc) t f—30
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 kΩ
+30 V 200Ω
C S*< 10 pF
1.0 kΩ
+30 V
200 Ω
C S* < 10 pF 1N916
+ 16 V
–14 V < 20 ns
<2.0 ns
– 2.0V
+ 16 V
Figure 2. Turn–Off Time
1.0 to 100µs,
DUTY CYCLE = 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
00
1.0 to 100µs,
DUTY CYCLE = 2%
– 4.0 V
3. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
O14–3/5
TRANSIENT CHARACTERISTICS
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
V CC = 30 V
I C / I B = 10
Q
T
T
J
= 25°C
T
J
= 100°C
C
obo
C
cb
Q
A
10 20 30 50 70 100 200 300 500
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
30
20
10
7.0
5.0
3.0
2.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
Q, CHARGE (pC)
CAPACITANCE (pF)
t , TIME (ns)
t , RISE TIME (ns)
V
CC
= 30V
I
C
/I
B
=10
t r @V CC=30V
t r @V CC=10V
t d@V EB=2.0V
t d@V EB=0V
I
C
/I
B
= 10
10 20 30 50 70 100 200 300 500
100
70
50
30
20
10
7.0
5.0 10 20 30 50 70 100 200 300 500
100
70
50
30
20
10
7.0
5.0
t
r
t
f
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Time
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 8. Fall Time
t f , FALL TIME (ns)
V
CC
= 30 V
I
B1
= I
B2
10 20 30 50 70 100 200 300 500
100
70
5050
30
20
10
7.0
5.0
I
C
/I
B
= 10
I
C
/I
B
= 20
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
t f , STORAGE TIME (ns)
t
s
’
= t
s
– 1/8 t
f
I
B1
= I
B2
I
C
/I
B
= 10 to 20
10 20 30 50 70 100 200 300 500
300
200
100
70
50
30
MMBT4401LT1
LESHAN RADIO COMPANY, LTD.
O14–4/5
MMBT4401L T1 UNIT 1
MMBT4401L T1 UNIT 2
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the MMBT4401LT1
lines, and the same units were used to develop the correspondingly numbered curves on each graph.
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
h fe, CURRENT GAIN
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
300
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
I C , COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
h ie, INPUT IMPEDANCE (kΩ)
50
20
10
5.0
2.0
1.0
0.5
I C , COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
h oe , OUTPUT ADMITTANCE ( µmhos)
100
50
20
10
5.0
2.0
1.0
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
MMBT4401L T1 UNIT 1
MMBT4401L T1 UNIT 2
MMBT4401L T1 UNIT 1
MMBT4401L T1 UNIT 2 MMBT4401L T1 UNIT 1
MMBT4401L T1 UNIT 2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
R S, SOURCE RESISTANCE (kΩ)
Figure 10. Source Resistance Effects
NF, NOISE FIGURE (dB)
f = 1.0 kHz
0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
0
500 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
f , FREQUENCY (kHz)
Figure 9. Frequency Effects
I C = 50 µA
I C = 100 µA
I C = 500 µA
I C = 1.0 mA
I
C
= 1.0 mA, R
S
= 150 Ω
I
C
= 500 µA, R
S
= 200 Ω
I
C
= 100 µA, R
S
= 2.0 kΩ
I
C
= 50 µA, R
S
= 4.0 kΩ
R
S
= OPTIMUM
RS = SOURCE
RS = RESISTANCE
10
8.0
6.0
4.0
2.0
0
MMBT4401LT1
LESHAN RADIO COMPANY, LTD.
O14–5/5
STATIC CHARACTERISTICS
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
h FE , NORMALIZED CURRENT GAINV CE, COLLECT OR EMITTER VOLTAGE (VOLTS)
I C=1.0 mA
T J = 125°C
V CE= 1.0 V
V CE=10 V
25°C
–55°C
10 mA
T J = 25°C
100mA 500mA
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0
0.8
0.6
0.4
0.2
0
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
T J = 25°C
θ VC for V CE(sat)
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
θ VB for V BE
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
10
0.8
0.6
0.4
0.2
0
+0.5
0
– 0.5
–1.0
–1.5
–2.0
– 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
MMBT4401LT1
