1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
1.2 Features
nTypical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:
uOutput power = 120 W
uPower gain = 13.5 dB
uEfficiency = 48 %
nEasy power control
nIntegrated ESD protection
nHigh flexibility with respect to pulse formats
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (2.7 GHz to 3.1 GHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
=25
°
C; t
p
= 100
µ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation f VDS PLGpηDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 2.7 to 3.1 32 120 13.5 48 20 6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 2 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
1.3 Applications
nS-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS6G2731-120 (SOT502A)
1 drain
2 gate
3 source [1]
BLS6G2731S-120 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLS6G2731-120 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLS6G2731S-120 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 33 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 3 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
5. Thermal characteristics
6. Characteristics
7. Application information
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-mb) transient thermal impedance from
junction to mounting base Tcase =85°C; PL= 120 W
tp= 100 µs; δ = 10 % 0.23 K/W
tp= 200 µs; δ = 10 % 0.28 K/W
tp= 300 µs; δ = 10 % 0.32 K/W
tp= 100 µs; δ = 20 % 0.33 K/W
Table 6. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 0.6 mA 60 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 180 mA 1.4 1.8 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 4.2 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 27 33 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transconductance VDS = 10 V; ID= 9 A 8.1 13 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID= 6.3 A - 0.085 0.135 Ω
Table 7. Application information
Mode of operation: pulsed RF; t
p
= 100
µ
s;
δ
= 10 %; RF performance at V
DS
=32V;I
Dq
= 100 mA;
T
case
=25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power - 120 - W
VCC supply voltage PL= 120 W - - 32 V
Gppower gain PL= 120 W 12 13.5 - dB
RLin input return loss PL= 120 W - 7 - dB
PL(1dB) output power at 1 dB gain compression - 130 - W
ηDdrain efficiency PL= 120 W 40 48 - %
Pdroop(pulse) pulse droop power PL= 120 W - 0 0.5 dB
trrise time PL= 120 W - 20 50 ns
tffall time PL= 120 W - 6 50 ns
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 4 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
7.1 Ruggedness in class-AB operation
The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load
mismatch corresponding to VSWR =5:1 through all phases under the following
conditions: VDS = 32 V; IDq = 100 mA; PL= 120 W; tp = 100 µs; δ = 10 %.
Table 8. Typical impedance
f ZSZL
GHz Ω Ω
2.7 3.4 − j7.2 4.6 − j4.4
2.8 3.8 − j5.9 3.8 − j4.6
2.9 4.7 − j4.8 3.0 − j4.6
3.0 6.3 − j4.1 2.3 − j4.3
3.1 8.8 − j4.9 1.8 − j3.9
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 5 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
7.2 Graphs
VDS =32V; I
Dq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 2. Power gain as a function of load power; typical
values Fig 3. Power gain as a function of load power; typical
values
VDS =32V; I
Dq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 4. Drain efficiency as a function of load power;
typical values Fig 5. Drain efficiency as a function of load power;
typical values
PL (W)
0 16012040 80
001aaj091
11
9
13
15
Gp
(dB)
7
(1)
(3)
(2)
PL (W)
0 16012040 80
001aaj092
11
9
13
15
Gp
(dB)
7
(1)
(3)
(2)
PL (W)
0 16012040 80
001aaj093
20
40
60
ηD
(%)
0
(1)
(2)
(3)
PL (W)
0 16012040 80
001aaj094
20
40
60
ηD
(%)
0
(1)
(2)
(3)
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 6 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
VDS =32V; I
Dq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 6. Load power as a function of input power;
typical values Fig 7. Load power as a function of input power;
typical values
PL = 120 W; VDS =32V; I
Dq = 100 mA; tp= 300 µs;
δ=10%. PL = 120 W; VDS =32V; I
Dq = 100 mA; tp= 100 µs;
δ=20%.
Fig 8. Power gain and drain efficiency as function of
frequency; typical values Fig 9. Power gain and drain efficiency as function of
frequency; typical values
001aaj095
Pi (W)
01284
80
40
120
160
PL
(W)
0
(1)
(3)
(2)
001aaj096
Pi (W)
01284
80
40
120
160
PL
(W)
0
(1)
(3)
(2)
f (GHz)
2.65 3.153.052.85 2.952.75
001aaj097
11
13
15
Gp
(dB)
9
40
50
60
ηD
(%)
30
Gp
ηD
f (GHz)
2.65 3.153.052.85 2.952.75
001aaj098
11
13
15
Gp
(dB)
9
40
50
60
ηD
(%)
30
Gp
ηD
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 7 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
8. Test information
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
001aaj099
C8
C7
C6C5
C4 R1
C1
C3 C9
C10 C12
C13
C2
C11
Rev3
Table 9. List of components
See Figure 10.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 24 pF ATC 100A or equivalent
C3 multilayer ceramic chip capacitor 47 µF; 20 V
C4, C6, C9, C10 multilayer ceramic chip capacitor 33 pF ATC 100A or equivalent
C5, C11 multilayer ceramic chip capacitor 1 nF ATC 100A or equivalent
C7, C8 multilayer ceramic chip capacitor 100 pF ATC 100B or equivalent
C12 electrolytic capacitor 47 µF; 63 V
C13 multilayer ceramic chip capacitor 10 µF; 35 V
R1 SMD resistor 56 ΩSMD 0603
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 8 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
9. Package outline
Fig 11. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 9 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Fig 12. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 10 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
S-band Short wave Band
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS6G2731-120_6G2731S-120_1 20081114 Product data sheet - -
BLS6G2731-120_6G2731S-120_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 14 November 2008 11 of 12
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 November 2008
Document identifier: BLS6G2731-120_6G2731S-120_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
