FAIRCHILD SEMICONDUCTOR ay 3464674 oo274i2 Oo 3469674 FAIRCHILD SEMICONDUCTOR 84D 27412 D cm SAIROHILD PE8050/PE8550 7-29-43 Be Ta NPN-PNP General Purpose ohlumberger Company Complementary Amplifiers & Output Drivers Voeo ... 25 V (Min) PACKAGE hrc... Outstanding Beta Linearity to 1.0 A PE8050 TO-92 e Three hre Groups - PE8550 TO-92 e Guaranteed SOA . Complements ... PE8050, (NPN), PE8550, (PNP) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 160C Operating Junction Temperature 150C Power Dissipation (Vce = 8.0 V) (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 0.625 W 25 C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voitage 25V (Note 4) Vero Collector to Base Voltage 30 V Veso Emitter to Base Voltage 6.0V Ic Collector Current (Continuous) 15A ic Collector Current (Pulsed) 15A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS VcEo Collector to Emitter Breakdown Voltage! 25 Vv lc = 10 mA, Ip = 0 (Note 5) Vcgo Collector to Base Breakdown Voltage 30 Vv Ic = 100 pA, le = 0 Veso Emitter to Base Breakdown Voltage 6.0 Vv le = 100 pA, Ie = O * Ico Collector Cutoff Current 100 nA | Vcs = 20V, le = 0 hee DC Current Gain (Note 5) 50 | 200 Ic = 10 MA, Vee = 1.0 V 65 200 Ie = 100 MA, Vee = 1.0 V 65 200 I = 500 mA, Vce = 1.0 V 40 | 200 lo = 1.0 A, Vee = 1.0 V Gain Grouping A 65 130 Ic = 100 MA, Vce = 1.0 V Gain Grouping B 85 160 Gain Grouping C 120 |; 200 NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be Impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (70-92) junction-to-case thermal resistance of 125C/W (derating factor of 50 mW? C}; junction-to-ambient thermal resistance of 125 C/W (derating factor of 8.0 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. . Pulse conditions: length = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set Ti24 for PE8050 & T202 for PE8550.FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR PE8050/PE8550 7-- AG -a3 By 3469674 O0274149 2 84D 27413 D - ay DE ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS hre1/hre2 | Beta Ratio at Two Currents 0.8 1.8 le1 = 100 mA, Ic2 =800 MA, Voce =1.0V hres/Nre, | Beta Ratio at Two Currents 0.8 15 1o1 = 150 MA, tog =500 mA, Vee =1.0V hte High Frequency Current Gain 1.0 le = 50 mA, Vce = 10 V, f = 100 MHz Veetsatt Collector to Emitter Saturation 0.15 V lc = 200 mA, Ia = 20 mA ' Voltage (Note 5) 0.5 Vv lo = 1.0 A, ls = 100 mA : Vectsat Base to Emitter Saturation 0.9 Vv lo = 200 mA, la = 20 MA Voltage (Note 5) 1.2 Vv Ic = 1.0 A, tp = 100 mA Cob Collector to Base Capacitance 40 pF Vca = 10 V, Ic =0, f = 1.0 MHz 3-133FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR DEERE ee FAIRCHIL Se cael ae ee A Schlumberger Company au De Bayese74 Ooa74ay 4 f 84D 27414 PN918/MPS918/FTSO918 7-3/-23 PN3563/MP$3563/FTSO3563 NPN Small Signal High Frequency Amplifiers & Oscillators D = Ge... 15dB (Min) @ 200 MHz (PN/FTSO918) Cos ... 1.7 pF (Max) @ 10 V NF... 6.0 dB (Max) @ 60 MHz ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 160C Operating Junction Temperature 150 C Power DisslIpation (Notes 2 & 3) Total Dissipation at PN/MPS 25C Ambient Temperature 0.625 W 65 C Ambient Temperature 0.300 W 25C Case Temperature 1.0W Voltages & Currents 3563 Vceo Collector to Emitter Voltage 12V (Note 4) Veso Collector to Base Voltage 30 V Verso Emitter to Base Voltage 2.0V Ic Collector Current 50 mA FTSO 0.350 W" 918 12V 30 V 3.0 V 50 mA PACKAGE PN918 TO-92 PN3563 TO-92 MPS918 TO-92 MPS3563 TO-92 FTSO918 TO-236AA/AB FTSO3563 TO-236AA/AB ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3563 MPS918 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown 30 Vv lc = 100 pA, le = 0 Voltage 30 Vv lc = 10 wA, le = 0 BVeeo Emitter to Base Breakdown 2.0 3.0 Vv le = 10 pA, lo = 0 Voltage leso Collector Cutoff Current 50 10 nA Ves = 15 V, le =O Hee DC Current Gain (Note 5) 20 Ip = 8.0 mA, Voe = 1.0 V 20 200 Io = 8.0 MA, Vee = 10 V Veeotsus) | Collector to Emitter Sustaining) 12 15 Vv Io = 3.0 mA, lp = 0 Voltage (Notes 4 & 5) Veetsat Collector to Emitter Saturation 0.4 Vv ic = 10 mA, lp = 1.0 mA Voltage (Note 5) Vecisan Base to Emitter Saturation 1.0 Vv Ic =10 mA, tp = 1.0 MA Voltage NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 CW {derating factor of 80 mW/* C); junction-to-ambient thermal resistance of 200 G/W (derating factor of 5.0 mW/? C); (TO-238) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/ C). Pulse conditions: length = 300 ys; duty cycle < 1%. For product family characteristic curves, refer to Curve Set T121 Package mounted on 99.5% alumina 8mm x & mm x 0.6 mm. "PoE Rating sefers to a high current point where collector to emitter voltage is lowest.FAIRCHILD SEMICONDUCTOR & 3469674 FAIRCHILD SEMICONDUCTOR 4 DE Bsyese7y ooazuis 84D 27415 D an PN918/MPS918/FTSO918 7-3/-23 PN3563/MPS3563/FTSO3563 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3563 MPS918 SYMBOL | CHARACTERISTIC MIN MAX {MIN MAX / UNITS TEST CONDITIONS Cob Output Capacitance 1.7 1.7 pF Vea = 10 V, fe =0, f =1.0 MHz 3.0 pF Ves = 0, le = 0, f = 1.0 MHz Civ Input Capacitance 2.0 pF Vea = 0.5 V, Ic =0, f= 1.0 MHz hte High. Frequency Current Gain 6.0 le = 4.0 MA, Vce = 10 V, f = 100 MHz a 6.0 15 Ic = 8.0 MA, Vce = 10 V, iy f = 100 MHz 4 Nite Small Signal Current Gain 20 250 Ic = 8.0 MA, Vee = 10 V, f= 1.0 kHz Gpe Available Power Gain 15 dB Ic = 6.0 MA, Von = 12 V, (neutralized) (test f = 200 MHz circuit 254 for 14 26 dB Ic = 8.0 MA, Vce = 10 V, MPS918, PN/MPS3563) f = 200 MHz Po Power Output 30 mW | Ic =8.0 MA, Voce = 15 V, (test circuit no. 264) f = 500 MHz q Collector Efficiency 25 % lo = 8.0 MA, Ves = 15 V, f = 500 MHz Tp'Ceo Collector to Base Time 8.0 25 pF Ic = 8.0 MA, Ves = 10 V, Constant f = 79.8 MHz NF Noise Figure 6.0 dB lc = 1.0 MA, Vee = 6.0 V, f = 60 kHz, Re = 400 9 PN918 SYMBOL! CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage 30 Vv lc = 10 wA, le = 0 BVeso Emitter to Base Breakdown Voltage 3.0 Vv le = 10 pA, lb = 0 lcao Collector Cutoff Current 10 nA | Voce = 15 V, le =0 1.0 pA Ves = 15 V, le =0, Ta = 150C hee DC Current Gain (Note 5) 20 lc = 3.0 MA, Vee = 1.0 V Vetorus | Collector to Emitter Sustaining 15 Vv Ic = 3.0 mA, In =0 Voltage (Notes 4 & 5) Veeteat Collector to Emitter Saturation 0.4 Vv Ic = 10 mA, lp = 1.0 mA Voltage (Note 5) Vectsa Base to Emitter Saturation Voltage 1.0 Vv Ic = 10 mA, lp = 1.0 mA Cob Output Capacitance 1.7 pF Vea = 10 V, le = 0, f = 1.0 MHz 3.0 pF Ves = 0, le = 0, f = 1.0 MHz Cib Input Capacitance 1.6 pF Ves = 0.5 V, lc = 0, f = 1.0 MHz A CART EF SS 3-135[FAIRCHILD SEMICONDUCTOR a4 pe sve5674 coe741n 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27416 D = PN918/MPS918/FTSO918 PN3563/MPS3563/FTSO3563 T= 21-2 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) PN918 SYMBOL| CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS Nte High Frequency Current Gain 6.0 lc = 4.0 MA, Vce = 10 V, f = 100 MHz Gpe Available Power Gain (neutralized) 15 dB lc = 6.0 mA, Ves = 12 V, (test circuit 254 for PN918) f = 200 MHz Po Power Output 30 mW [Ic =8.0 mA, Vee = 15 V, (test circuit no. 264) f = 500 MHz n Collector Efficiency 25 % lc = 8.0 MA, Vea = 15 V, f = 500 MHz NF Noise Figure 6.0 dB Ic = 1.0 MA, Vee = 6.0 V, f = 60 kHz, Re = 400 0FAIRCHILD SEMICONDUCTOR 84 DEB a4b5L74 Ooe741? oO 3469674 FAIRCHILD SEMICONDUCTOR 84D 27417 D ems PN3565/FTSO3565 727-23 NPN Low Level High Gain Amplifiers Veco ... 28 V (Min) PACKAGE Wee ... 150-600 @ 1.0 mA PN3565 TO-92 - FTSO3565 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C I Power Dissipation (Note 2) Total Dissipation at PN FTSO 25C Ambient Temperature 0.625 W 0.350 W* 25C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage 25 V (Note 3) Veso Collector to Base Voltage 30 V Veso Emitter to Base Voltage 6.0 V Ic Collector Current 50 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL} CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage 30 Vv le = 100 pA, le = 0 BVeso Emitter to Base Breakdown Voltage 6.0 Vv lo = 0, le = 10 pA IcBo Collector Cutoff Current 50 nA | Vee = 25 V, le = 0 Icao Collector Cutoff Current 3.0 pA Vee = 25 V, le = 0, Ta = 65C hre DC Current Gain 150 | 600 Ile = 1.0 mA, Voce = 10 V 70 Ilo = 100 vA, Vee = 10 V Vceoteus) | Collector to Emitter Sustaining Voltage | 25 Vv Io = 2.0 mA, ls =0 Veetsatn Collector to Emitter Saturation Voltage 0.35 Vv lo = 1.0 mA, fe = 0.1 MA : Cop Open Circuit Output Capacitance 40 pF le =0, Vos = 5.0 V, f = 140 kHz : hte High Frequency Current Gain 2.0 12 Ico = 1.0 mA, Voce = 5.0 V, f = 20 MHz Nie Input Resistance 2.0 20 kQ Io = 1.0 MA, Vee = 5.0 V, f = 1.0 KHz . Noe Output Conductance 0.6 | 100 | umhos | to = 1.0 mA, Voce =5.0 V, f = 1.0 kHz i hte Small Signal Current Gain 120 | 750 Io = 1.0 MA, Voce = 5.0 V, f = 1.0 kHz NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These ratings give a maximum Junction temperature of 150C and (T1092) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 6.0 mW/ C); (TO236) junction-to-ambient thermal resistance of 357 C/W (deraling factor of 2.8 mW/C), 3. Rating refers to a high current point where collector to emitter voitage is lowest. 4. For product family characteristic curves, refer to Curve Set T155. * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.. HEFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICON AIRGHILD E Schlumberger Company BY DUCTOR DE S4GSb74 O0e7418 B4D 27418 Di PN3566/FTSO3566 NPN Small Signal General Purpose Amplifiers P 7-44 - 2.3 Voceo ... 30 (Min) PACKAGE hre ..- 150-600 @ 10 mA PN3566 TO-92 e Complement ... MPS3638A FTSO3566 TO-236AA/AB & ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C | Operating Junction Temperature 150 C i Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25C Ambient Temperature 0.625 W 0.350 W* 25C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage 30 V (Note 4) Vceo Collector to Base Voltage 40 V Vero Emitter to Base Voltage 5.0 V Ic Collector Current 200 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 357 G/W (derating factor of 2.8 mW/C}. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ps: duty cycle < 1%, 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99 5% alumina 8mm x8 mm x 0.6 mm. SYMBOL| CHARACTERISTIC MIN |MAX | UNITS TEST CONDITIONS BVcso Collector to Base Breakdown Voltage | 40 Vv ig = 100 pA, Ie = 0 BVeso Emitter to Base Breakdown Voltage 5.0 Vv le = 10 pA, Ie =O Ico Collector Cutoff Current 50 nA | Vea = 20V, le =0 Iczo Collector Cutoff Current 5.0 pA | Vos = 20V, le = 0, Ta = 75C leso Emitter Cutoff Current 10 pA Vea = 5.0 V, Ic =0 Nee DC Pulse Current Gain (Note 5) 150 | 600 lo = 10 MA, Vce = 10 V 80 lc = 2.0 MA, Vee = 10 V NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired, 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction mW/? GC); junction-to-ambient thermai resistance of 200 C/V (de -to-case thermal resistance of 125 C/W (derating factor of 8.0 rating factor of 50 mW/ CG); (TO-236) junction-to-ambient thermal resistance ofr ~ - 2 oe FAIRCHILD SEMICONDUCTOR 4 3469674 QOe74149 3 PN3566/FTSO3566 Fr 242 23 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN |MAX |UNITS TEST CONDITIONS Veetsap Collector to Emitter Saturation Voltage 1.0 Vv lo = 100 mA, le = 10 mA (Pulsed) (Note 5) Veeotsus | Collector to Emitter Sustaining Voltage | 30 Vv lc = 30 mA, Is = 0 (pulsed) (Notes 4 & 5) Veecon Base to Emitter On Voltage 0.9 Vv le = 100 MA, Voz = 1.0 V (pulsed) (Note 5) Cob Output Capacitance 25 pF Vos = 10 V, le = 0, f = 140 kHz hte High Frequency Current Gain 2.0 35 le = 30 MA, Voge = 10 V, f = 20 MHzFAIRCHILD SEMICONDUCTOR 44 DEB 3464674 0027420 Oo SEMICONDUCTOR 84D 27420 D pez cso ie PN3567/FTSO3567 PAIR CHILD PN3569/FTSO3569 | Bete att, A. 5 eae th A Schlumberger Company ; , NPN Small Signal General Purpose Amplifiers P T-a% -a3 : Vceo ... 40 V (Min) PACKAGE ' hee ... 100-300 @ 10 mA (3569); 40-120 @ 150 mA (3567) PN3567 TO-92 ; Complement ... MPS4355 PN3569 TO-92 : FTSO03567 TO-236AA/AB : ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3569 TO-236AA/AB : i | Temperatures L . Storage Temperature -55 C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25 C Ambient Temperature 0,625 W 0.350 W* 25 G Case Temperature 1.0 W Voltages & Currenis Vceo Collector to Emitter Voltage 40V (Notes 4 & 6) Veso Collector to Base Voltage 80V Veso Emitter to Base Voltage 5.0 V Ic Collector Current 500 mA lp Base Current 100 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 7) 3567 3569 SYMBOL} CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BV ceo Collector to Emitter Breakdown! 40 40 Vv Ic = 30 mA, Ip = 0 Voltage (Note 5) . BVcso Collector to Base Breakdown 80 80 Vv Ic = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown 5.0 5.0 Vv le = 10 vA, Ic =0 * Voltage loko Collector Cutoff Current 50 50 nA Ves = 40 V, le =0 5.0 5.0 BA Vos = 40 V, le = 0, Ta = 785C leno Emitter Cutoff Current 25 25 nA Vee = 4.0 V, lo=0 NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125CAV (derating factor of 80 mW/C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/*C}; (TO-236) function-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/C), Rating refers to a high current point where collector to emitter voitage is lowest Pulse conditions: length = 300 ys; duty cycle = 1%. Applicable 0 to 30 mA. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x & mm x 0.6 mm. NagsEFALRCHILD SEMICONDUCTOR IRCHILD SEMICONDUCTOR 84 J4b9G74 Goe22u2L 1 84D 27421 PN3567/FTSO3567 PN3569/F TSO3569 Dress 7-29.43 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 7) 3567 3569 SYMBOL | CHARACTERISTIC MIN MAX |MIN MAX j UNITS TEST CONDITIONS 1 hre DC Current Gain (Note 5) 40 120 |100 | 300 le = 150 mA, Vce = 1.0 V , 40 400 Ic = 30 mA, Voce = 1.0V Veeisan Collector to Emitter Saturation 0.25 0.25 Vv le = 150 mA, Is = 15 MA Voltage (Note 5) Veeion Base to Emitter On Voltage 1.1 1.1 Vv le = 150 mA, Vce = 1.0 V (Note 5) Cob Collector to Base Capacitance 20 20 pF Vea = 10 V, le = 0, f = 140 kHz Con Emitter to Base Capacitance 80 80 pF | Ves =0.5V, lc=0, f =140 kHz | tel Magnitude of Common Emitter | 3.0 | 30 |3.0 | 30 Ic = 50 mA, Vce = 10 V, Small Signal Current Gain f = 20 MHz a PEST Ee z Em = Ee ETE ED 3-141