Mega Power
Dual IGBTMOD™
1400 Amperes/1200 Volts
CM1400DU-24NF
14/12 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Outline Drawing and Circuit Diagram
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching two
IGBT applications. Each
module consists of a half-bridge
configuration, with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ High Power UPS
£ Large Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1400DU-24NF
is a 1200V (VCES), 1400 Ampere
Dual IGBTMOD Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 1400 24
Dimensions Inches Millimeters
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
M 0.075±0.08 1.9±0.2
P 0.26 6.5
R M6 Metric M6
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
A
D
P
(8 PLACES) L
TC MEASURED POINTS
(THE SIDE OF Cu BASEPLATE)
L
M
H H HHH H
K
G
UH H
E
F
F
E2
C2
C2E1
C1
G2 E1
E2 G1
C1
V
S
T
B
C
J
J
G G R (9 PLACES)
LABEL
U
W
X
YZ
AA
C2E1
E2
G2
E2
C2
E1
G1
C1
C1
CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4/12 Rev.3
Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol Ratings Units
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current DC (TC' = 94°C)*5 IC 1400 Amperes
Peak Collector Current (Pulse)*2 ICM 2800 Amperes
Emitter Current (TC = 25°C) IE*1 1400 Amperes
Peak Emitter Current (Pulse)*2 IEM*1 2800 Amperes
Maximum Collector Dissipation (TC = 25°C) PC*3 3900 Watts
Junction Temperature Tj -40 to 150 °C
Storage Temperature*4 Tstg -40 to 125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.) Viso 2500 Volts
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Terminal Screw – 40 in-lb
Weight (Typical) – 1400 Grams
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 140mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES ±VGE = VGES, VCE = 0V – – 1.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C*4 – 1.8 2.5 Volts
(Without Lead Resistance) (Chip) IC = 1400A, VGE = 15V, Tj = 125°C*4 – 2.0 – Volts
Module Lead Resistance R(lead) IC = 1400A, Terminal-Chip – 0.286 – mΩ
Input Capacitance Cies – – 220 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 25 nF
Reverse Transfer Capacitance Cres – – 4.7 nF
Total Gate Charge QG VCC = 600V, IC = 1400A, VGE = 15V – 7200 – nC
Turn-on Delay Time td(on) – – 800 ns
Turn-on Rise Time tr VCC = 600V, IC = 1400A, – – 300 ns
Turn-off Delay Time td(off) VGE = ±15V, – – 1000 ns
Turn-off Fall Time tf RG = 0.22Ω, Inductive Load, – – 300 ns
Reverse Recovery Time trr*1 IE = 1400A – – 700 ns
Reverse Recovery Charge Qrr*1 – 90 – µC
Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V – – 3.2 Volts
(Without Lead Resistance) (Chip)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*8 The operation temperature is restrained by the permission temperature of female connector.
CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4/12 Rev. 3
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*7 Rth(j-c)Q IGBT Part (1/2 Module) – – 0.032 K/W
Thermal Resistance, Junction to Case*7 Rth(j-c)D FWDi Part (1/2 Module) – – 0.053 K/W
Contact Thermal Resistance*6 Rth(c-f) Case to Heatsink, – 0.016 – K/W
Thermal Grease Applied (1/2 Module)
Thermal Resistance, Junction to Case*5 Rth(j-c')Q Per IGBT Part, – – 0.014 K/W
TC Reference Point Under the Chips
Thermal Resistance, Junction to Case*5 Rth(j-c')D Per FWDi Part, – – 0.023 K/W
TC Reference Point Under the Chips
External Gate Resistance RG 0.22 – 2.2 Ω
*5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Case temperature (TC) measured point is shown in the device dtawing.
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
103
102
101
100
101
0.5 1.5 1.0 3.0 3.52.0 2.5 4.0
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
104
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0 4 8 12 16 20
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
3
4
0 400 1200
2
1
028001600 24002000
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 560A IC = 2800A
IC = 1400A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1 2 3 4 5 6 7 8 9 10
VGE = 20V
10
11
12
15
13
9
8
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
2000
400
0
1200
1600
800
2400
2800
2000
400
0
1200
1600
800
2400
2800
600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0 8 12 16 20
VCE = 10V
Tj = 25°C
Tj = 125°C
4
10-1
CM1400DU-24NF
Mega Power Dual IGBTMOD™
1400 Amperes/1200 Volts
4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4/12 Rev.3
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
0
16
12
8
4
0
COLLECTOR CURRENT, IC, (AMPERES)
104
102103
103
102
101
SWITCHING TIME, (ns)
2000 4000 1000080006000
VCC = 600V
td(off)
td(on)
tr
VCC = 600V
VGE = 15V
RG = 0.22Ω
Tj = 125°C
Inductive Load
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
103
102103
102
101
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
trr
Irr
VCC = 600V
VGE = 15V
RG = 0.22Ω
Tj = 125°C
Inductive Load
VCC = 400V
IC = 1400A
104104
EMITTER CURRENT, IE, (AMPERES)
102103104
100
101
102
103
VCC = 600V
VGE = 15V
Tj = 125°C
RG = 0.22Ω
Inductive Load
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
102103104
100
102
101
103
VCC = 600V
VGE = 15V
Tj = 125°C
RG = 0.22Ω
ESW(on)
ESW(off)
Inductive Load
EXTERNAL GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = 15V
Tj = 125°C
IC = 1400A
Inductive Load
EXTERNAL GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
0 1.51.00.5 2.52.0
101
102
103
VCC = 600V
VGE = 15V
Tj = 125°C
IC = 1400A
ESW(on)
ESW(off)
Inductive Load
0 1.51.00.5 2.52.0
101
102
103
GATE CHARGE, VGE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)
REVERSE RECOVERY ENERGY VS.
EMITTER CURRENT
(TYPICAL)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
REVERSE RECOVERY ENERGY, Err, (mJ/PULSE)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
TIME, (s)
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Single Pulse
TC = 25°C
Per Unit Base
Rth(j-c')
= 0.014 K/W (IGBT)
Rth(j-c')
= 0.023 K/W (FWDi)