2N7086
Prelim. 1/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDContinuous Drain Current TC= 25°C
TC= 100°C
IDM Pulsed Drain Current 1
PDPower Dissipation TC= 25°C
TC= 100°C
TJ, Tstg Operating and Storage Temperature Range
TLLead Temperature (1/16” from case for 10 sec.)
200V
±20V
14A
8.5A
56A
60W
23W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm(inches)
123
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
12.07 (0.500)
19.05 (0.750)
Dia.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO–257AB Metal Package
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
V(BR)DSS 200V
ID(A) 14A
RDS(on) 0.16ΩΩ
Parameter Min. Typ. Max. Unit
RthJC Thermal resistance Junction-Case 2.1
RthJA Thermal resistance Junction-ambient 80 K/W
RthCS Thermal resistance Junction-ambient 1.0
2N7086
Prelim. 1/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 250µA
VDS = VGS ID= 250µA
VDS = 0 VGS = ±20V
VDS = 160V
VGS = 0 TJ= 125°C
VDS = 10V VGS = 10V
VGS = 10V
ID= 8.5A TJ= 125°C
VDS = 15V IDS = 8.5A
VGS = 0
VDS = 25V
f = 1MHz
VDS = 0.5 x V(BR)DSS
VGS = 10V ID= 14A
VDD = 100V ID= 14A
VGEN =10V
RL= 7.1Ω
RG= 4.7Ω
IF= ISVGS = 0
IF= IS
dIF/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current1
Static Drain – Source On–State
Resistance 1
Forward Transconductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate Source Charge2
Gate Drain Charge2
Turn–On Delay Time2
Rise Time2
Turn–Off Delay Time2
Fall Time2
Continuous Current
Pulse Current 3
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
200
24
±100
25
250
14 0.14 0.16
0.25 0.30
5.0
1550
500
220
30 44 77
4.6 10 15
13 26 35
10 30
60 100
30 80
40 95
114
56
2.0
150 650
0.5
V
V
nA
µA
A
Ω
S
pF
nC
ns
A
V
ns
µC
BV(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2Independent of Operating Temperature
3Pulse width Limited by maximum Junction Temperature
