SIEMENS Silicon Low Leakage Diode Array BAV 170 @ Low leakage applications @ Medium speed switching times @ Common cathode VPS05161 Type Marking Ordering Code Pin Configuration Package) (tape and reel) BAV 170 JXs Q62702-A920 3 SOT-23 2 EHAQ7004 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Vr 70 Vv Peak reverse voltage Vam 70 Forward current Te 200 mA Surge forward current, t= 1 us Tes 45 A Total power dissipation, Ts = 35 C Prot 250 mW Junction temperature Tj 150 Cc Storage temperature range Tag 65... + 150 Thermal Ftesistance Junction - ambient?) Rtn sa s 600 K/AW Junction - soldering point Rinss < 460 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm 40 mm x 1.5 mmV/6 cm? Cu. Semiconductor Group 356 5.91SIEMENS BAV 170 Electrical Characteristics per Diode at Ta = 25 C, unless otherwise specified. Parameter Symbol Values min. | typ. | max. Unit DC characteristics Breakdown voltage Ter) = 100 pA Vier 70 |- - Forward voltage Ir= 1mA fe= 10mA Ir= 50mA Ir = 150mA Ve - - 1100 - - 1250 mV Reverse current Va=70V Va = 70 V, Ta = 150C Ir nA AC characteristics Diode capacitance Va = 0 V, f= 1 MHz Co pF Reverse recovery time Ir = 10 mA, Jn= 10 mA, Ri = 100 Q measured at Ja = 1 mA tr pS Test circuit for reverse recovery time .U.T. Ww ti Pulse generator: t=5us, D= 0.05 t= 0.6 ns, Rj = 50 Q Semiconductor Group Oscillegroph QOscillograph: R=50Q 357 fr = 0.35 ns Cs<1pFSIEMENS BAV 170 Forward current Jr = f(T"; Ts) Reverse current /r = f (Ts) * Package mounted on epoxy 300 Bav 170 H900079 10 2 SAV 170 HBO006) t; nA mA J, 10! 200 N A 6 q NI 10 NON NN I, 107" 100 ws ANY N 107? N % 50 joo C 150 10-* g 50 100 C 150 oe Tal Forward current /r = f (Vr) Ta = 25C 150 24v 170 EHB0008! tr mA 50 0 0.5 1.0 Voo15 e Ve Semiconductor Group > 7 A Peak forward current /rm =f (t} at cll oH Me SLU Hl rl ti ii il iil! 1 1o 1075 1 1073 1072 1077s 10 - f 358SIEMENS BAV 170 Forward voltage Vr = f (7s) 4 0 930 100 C 150 Vy Semiconductor Group 359