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©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FJPF3305 Rev. B
FJPF3305 High Voltage Switch Mode Application
May 2007
FJPF3305
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast and Switching Regulator
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings ar e limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
ICCollector Current (DC) 4 A
ICP Collector Current (Pulse) 8 A
IBBase Current 2 A
PCCollector Dissipation (Ta = 25°C) 30 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
1
1.Base 2.Collector 3.Emitter
TO-220F
2www.fairchildsemi.com
FJPF3305 Rev. B
FJPF3305 High Voltage Switch Mode Application
Electrical Characteristics * TC = 25°C unless otherwise noted
* Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2%
hFE Classification
Symbol Parameter Conditions Min. Typ. Max Units
BVCBO Collector-Base Breakdwon Voltage IC = 500μA, I E = 0 700 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 9 V
ICBO Collector Cut-off Current VCB = 700V, IE = 0 1μA
IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1μA
hFE1
hFE2
DC Current Gain * VCE = 5V, IC = 1A
VCE = 5V, IC = 2A 19
835
40
VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1.0
V
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A 1.2
1.6 V
V
fTCurrent Gain Bandwidth Product VCE = 5V, IC = 1A 4MHz
Cob Output Capacitance VCB = 10V, f = 1MHz 65 pF
tON Turn On Time VCC = 125V
IC = 2A = 5IB1 = -5IB2
RL = 62.5Ω
0.8 μs
tSTG Storge Time 4.0 μs
tFFall Time 0.9 μs
Classification H1 H2
hFE2 19 ~ 28 26 ~ 35
3www.fairchildsemi.com
FJPF3305 Rev. B
FJPF3305 High Voltage Switch Mode Application
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade)
Figure 3. DC Current Gain (O-Grade) Figure 4. Saturation Voltage (R-Grade)
Figure 5. Saturatin Voltage (O-Grade) Figure 6. Saturation Voltage (R-Grade)
012345678910
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IB = 300mA
IB = 100mA
IB = 50mA
IC [A], COLLECTOR CURR EN T
VCE [V], COLLECTOR-EMITTER VO LTAG E 0.01 0.1 1 10
1
10
100
VCE = 5V
Ta = 125 OCTa = 75 OC
Ta = 25 OC
Ta = - 25 OC
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CUTRRE NT
0.01 0.1 1 10
1
10
100
VCE = 5V
Ta = 125 OCTa = 75 OC
Ta = 25 OC
Ta = - 25 OC
hFE, DC C URREN T G AIN
IC [A], COLLECTOR CUTRRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 4 IB
Ta = 75 OC
Ta = 125 OC
Ta = 25 OC
Ta = - 25 OC
VCE(sat) [V ], S A T URATIO N VOLT A GE
IC [A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 4 IB
Ta = 75 OC
Ta = 125 OC
Ta = 25 OC
Ta = - 25 OC
VCE(sa t) [V ], SATUR A T ION VOL T A GE
IC [A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 4 IB
Ta = 75 OC
Ta = 125 OC
Ta = 25 OC
Ta = - 25 OC
VBE(sa t) [V ], SATUR A T ION VOL T A GE
IC [A], COLLECTOR CURRENT
4www.fairchildsemi.com
FJPF3305 Rev. B
FJPF3305 High Voltage Switch Mode Application
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time
Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area
Figure 11. Power Derating
0.01 0.1 1 10
0.01
0.1
1
10
IC = 4 IB
Ta = 75 OC
Ta = 125 OC
Ta = 25 OC
Ta = - 25 OC
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT 0.1 1 10
0.01
0.1
1
10
IB1 = - IB2 = 0.4A
VCC = 125V
tSTG
tF
tF & tSTG [μs], S WITCHIN G TIME
IC [A ], C OLLECT O R CURR E NT
10 100 1000
1
10
IB1=2A, RB2=0
VCC=50V, L=1mH
IC [A], COLL E C T OR CUR RENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
0.01
0.1
1
10
100
TC = 25OC
Sin g le Pulse
IC (P u ls e)
500μs
5ms
1ms
IC (DC)
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTE R VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
PC[W], POWER D IS S IPATION
Tc[oC], CA S E TEMP ERATUR E
B
4.90
4.50
16.00
15.60
10.05
9.45
3.40
3.20
3.28
3.08
B
10.36
9.96
1.47
1.24
0.90
0.70
0.45
0.25
30°
2.54 2.54
7.00
2.14
(3.23)
B
13
SEE NOTE "F"
0.50
M
A
A
B
2.66
2.42
B
16.07
15.67
2.96
2.56
B
0.60
0.45
0.70
6.88
6.48
1 X
45°
SEE NOTE "F"
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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