SPEC NO: DSAD0358 REV NO: V.4 DATE:JAN/26/2005 PAGE: 1 OF 3
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.CHENG
GLP-003/1608CGKC GREEN
Description
The Green source color devices are made with InGaAlP
on GaAs substrate Light Emitting Diode.
BACK LIGHT
Features
LOW POWER REQUIREMENTS.
LARGE AREA, UNIFORM, BRIGHT LIGHT
EMITTING SURFACE.
EASY FOR INSTALLATION.
LOW POWER CONSUMPTION.
RoHS COMPLIANT.
Package Dimensions & Internal Circuit Diagram
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
SPEC NO: DSAD0358 REV NO: V.4 DATE:JAN/26/2005 PAGE: 2 OF 3
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.CHENG
Selection Guide
Electrical / Optical Characteristics at TA=25°C
Absolute Maximum Ratings at TA=25°C
Part No. Dice Lens Type Ev (lux)
@ 80mA
Min. Typ.
GLP-003/1608CGKC GREEN (InGaAIP) WATER CLEAR 110 164.5
Symbol Parameter Device Typ. Max. Test ConditionsUnits
λpeak Peak Wavelength Green 574 nm IF=20mA
λDDominant Wavelength Green 570 nm IF=20mA
∆λ1/2 Spectral Line Half-width Green 20 nm IF=20mA
C Capacitance Green 15 pF VF=0V;f=1MHz
VFForward Voltage
(per chip) Green 2.1 2.5 V IF=20mA
IRReverse Current
(per chip) Green 10 uA VR = 5V
Parameter Green Units
Power dissipation
(per chip) 105 mW
DC Forward Current
(per chip) 30 mA
Reverse Voltage
(per chip) 5 V
Operating/Storage Temperature -40°C To +85°C
Peak Forward Current [1]
(per chip) 150 mA
Note:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
Note:
1.Test circit: The chips are four in parallel.
SPEC NO: DSAD0358 REV NO: V.4 DATE:JAN/26/2005 PAGE: 3 OF 3
APPROVED: J. Lu CHECKED: Joe Lee DRAWN: Y.CHENG
Green GLP-003/1608CGKC
