PD - 9.1241C IRF7306 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 Description 1 8 2 7 3 6 4 5 D1 VDSS = -30V D1 D2 D2 RDS(on) = 0.10 To p V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 25C I D @ TA = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -4.0 -3.6 -2.9 -14 2.0 0.016 20 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units --- 62.5 C/W 8/25/97 IRF7306 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -30 --- --- --- -1.0 2.5 --- --- --- --- --- --- --- --- --- --- --- RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- V(BR)DSS I GSS Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.037 --- V/C Reference to 25C, I D = -1mA --- 0.10 VGS = -10V, ID = -1.8A --- 0.16 VGS = -4.5V, ID = -1.5A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -24V, I D = -1.8A --- -1.0 VDS = -24V, VGS = 0V A --- -25 VDS = -24V, VGS = 0V, TJ = 125C --- -100 V GS = -20V nA --- 100 VGS = 20V --- 25 ID = -1.8A --- 2.9 nC VDS = -24V --- 9.0 VGS = -10V, See Fig. 6 and 12 11 --- VDD = -15V 17 --- I D = -1.8A ns 25 --- RG = 6.0 18 --- RD = 8.2, See Fig. 10 D 4.0 --- LS Internal Source Inductance --- 6.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 440 200 93 --- --- --- nH Between lead tip and center of die contact pF VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -2.5 showing the A G integral reverse --- --- -14 p-n junction diode. S --- --- -1.0 V TJ = 25C, IS = -1.8A, VGS = 0V --- 53 80 ns TJ = 25C, IF = -1.8A --- 66 99 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF7306 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4.5V TOP 10 -I D , D ra i n -to -S o u rc e C u rre n t (A ) -ID , D ra in -to -S o u rc e C u rre n t (A ) TOP -4 .5V 20 s P U LSE W IDTH TJ = 25 C A 1 0.1 1 10 10 -4.5 V 2 0 s PU L SE W ID TH T J = 1 50 C 1 100 0.1 1 -VD S , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics R D S (o n ) , Drain-to-S ource On Resistance (N ormalized) -I D , D ra in-to -S ou rce C urr ent ( A ) 100 TJ = 2 5 C T J = 1 5 0 C 10 V D S = - 15 V 2 0 s P U L S E W ID TH 4 5 6 7 8 9 -V G S , G ate-to-S o urce V oltage ( V ) Fig 3. Typical Transfer Characteristics A 100 -V D S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics 1 10 10 A 2.0 I D = -3 .0A 1.5 1.0 0.5 VG S = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7306 1000 600 -VG S , G a te -to -S o u rc e V o lta g e (V ) 800 C, C apacitance (pF) 20 V G S = 0 V, f = 1MH z C iss = C g s + C gd , C ds SH O R TED C rs s = C gd C os s = C ds + C g d C iss C o ss 400 C rss 200 0 10 16 12 8 4 FOR TE ST C IR C U IT S EE FIG U R E 12 0 A 1 ID = -3.0 A VDS = -24 V 100 0 -V D S , Drain-to-S ource V oltage (V ) 10 15 20 A 25 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -IS D , Reverse Drain Current (A) 5 10 TJ = 1 50 C TJ = 25C 1 VG S = 0 V 0.1 0.0 0.3 0.6 0.9 1.2 -VS D , Source-to-D rain V oltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.5 100us 10 1ms TC = 25 C TJ = 150 C Single Pulse 1 1 10ms 10 100 -VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRF7306 4.0 VDS -I D , Drain Current (A) VGS 3.0 RD D.U.T. RG + VDD -10 V 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 T C , Case Temperature 125 150 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7306 Current Regulator Same Type as D.U.T. 50K QG -10 V QGS .2F 12V .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 12a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7306 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [ VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS [ISD ] IRF7306 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches) DIM D -B- 5 E -A- 5 8 7 6 5 1 2 3 4 e 6X H 0.25 (.010) M A M A -C- 0.10 (.004) A1 B 8X 0.25 (.010) L 8X 6 C 8X MAX .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8 0 8 M C A S B S MIN .0532 e1 MILLIMETERS MAX A e K x 45 e1 INCHES MIN 0 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO-8 E X A M P LE : T H IS IS A N IR F 7101 312 IN T E R N A T IO N A L R E C T IF I E R LO G O D A TE C O DE (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X F 7 101 TOP P A R T N UM B E R W AFER LO T C O D E (L A S T 4 D IG IT S ) B O T TO M IRF7306 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 2 .05 (.080) 1 .95 (.077) T ERM IN ATIO N N UM BE R 1 1.85 (.072) 4.10 ( .161 ) 1.65 (.065) 3.90 ( .154 ) 1.60 (.062) 1.50 (.059) 0.35 (.013) 0.25 (.010) 5.55 (.218) 5.45 (.215) 1 FE ED D IRE CTIO N 5.30 ( .208) 5.10 ( .201) 2.60 (.102) 1.50 (.059) 8.10 (.318) 7.90 (.311) 2.20 ( .08 6) 2.00 ( .07 9) 6.50 (.255) 6.30 (.248) 13.20 (.519) 12.80 (.504) 1 2.30 (.484) 1 1.70 (.461) 15.40 (.607) 11.90 (.469) 2 50.00 ( 1.96 9) M IN. 33 0.00 ( 13.000) M AX . N O TES : 1 CO N FO RM S TO EIA -48 1-1 2 INC LUD ES FLA NG E D IST O RTIO N @ O U TER E DG E 3 DIM E NS IO NS M E AS URE D @ HUB 4 CO N TRO LLING DIM E NSIO N : M ETR IC 14.40 (.5 66) 12.40 (.4 48) 3 18.4 0 ( .7 24) M AX 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97