HEXFET® Power MOSFET
PD - 9.1241C
lGeneration V Technology
lUltra Low On-Resistance
lDual P-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7306
SO-8
VDSS = -30V
RDS(on) = 0.10Ω
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -10V -4.0
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.9
IDM Pulsed Drain Current -14
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ,
TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
81
2
3
45
6
7
8/25/97
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 62.5 °C/W
IRF7306
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 –– – –– – V V GS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.037 ––– V/°C Reference to 25°C, I D = -1mA
––– ––– 0.10 VGS = -10V, ID = -1.8A
––– ––– 0.16 VGS = -4.5V, ID = -1.5A
VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 2.5 ––– ––– S VDS = -24V, I D = -1.8A
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V GS = 20V
QgTotal Gate Charge –– – –– – 25 I D = -1.8A
Qgs Gate-to-Source Charge ––– ––– 2.9 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 9.0 VGS = -10V, See Fig. 6 and 12
td(on) Turn-On Delay Time ––– 11 ––– V DD = -15V
trRise Time ––– 17 ––– I D = -1.8A
td(off) Turn-Off Delay Time ––– 2 5 ––– RG = 6.0Ω
tfFall Time ––– 18 ––– RD = 8.2Ω, See Fig. 10
Between lead tip
and center of die contact
Ciss Input Capacitance ––– 440 ––– VGS = 0V
Coss Output Capacitance ––– 200 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 9 3 – – – ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
trr Reverse Recovery Time ––– 5 3 80 ns TJ = 25°C, IF = -1.8A
Qrr Reverse RecoveryCharge ––– 6 6 99 µC di/dt = 100A/µs
ton Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– ––– -14
––– ––– -2.5 A
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance ––– 6.0 –––
LDInternal Drain Inductance ––– 4.0 ––– nH
ns
nA
µA
ΩRDS(ON) Static Drain-to-Source On-Resistance
S
D
G
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7306
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1
10
100
0.1 1 10 100
D
DS
A
-I , Dra in-to -Sou rce C urre nt (A)
-V , D rain-to - So ur c e Vo lt ag e (V )
V GS
TO P - 15 V
- 1 0V
- 8 .0V
- 7 .0V
- 6 .0V
- 5 .5V
- 5 .0V
B OTT OM - 4.5V
-4.5 V
20µs PULS E WIDTH
T = 25 °C
J
1
10
100
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 150°C A
-I , Drain-to -So urce Current (A)
-V , D ra in-to-So urc e V oltag e (V)
V G S
TO P - 15 V
- 1 0V
- 8 .0V
- 7 .0V
- 6 .0V
- 5 .5V
- 5 .0V
BO TTOM - 4.5V
-4 .5V
J
1
10
100
45678910
T = 25°C
T = 150°C
J
J
GS
D
A
-I , D ra in-to-Source Current (A )
-V , G ate-to-Source Voltage ( V)
V = -1 5V
20µs PULS E WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction T emperature (°C)
R , Dr a in-to-Sou rc e On R e s ista nce
DS(on)
(Normalized)
A
V = -10 V
GS
I = - 3.0 A
D
IRF7306
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1 10 100
C, C apacitance (pF)
A
DS
-V , Drain-to-S ource V oltage (V)
V = 0V, f = 1 MHz
C = C + C , C S HORTED
C = C
C = C + C
GS
iss g s gd ds
rss gd
oss ds g d
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , To ta l G a te Ch arge (n C)
G
A
-V , G ate-to-Sou rc e Voltage (V)
GS
I = -3 .0A
V = -2 4V
DS
D
FOR TE ST CIRCUIT
SEE FIGURE 1 2
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , R e ve rse Dr ain Cu rre nt (A)
-V , Source-to-D rain Voltage (V)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7306
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
-10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RGD.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
+
-
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
IRF7306
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
-10 V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
IRF7306
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
IRF7306
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
SO-8
Part Marking Information
EXAM PLE : THIS IS AN IR F7101
DATE CODE (YWW)
Y = L AST DIG IT OF THE YEAR
WW = WEEK
W A FER
L OT C OD E
(L AST 4 DIG ITS)
XXXX
BOTTOM
PART NUMBER
TOP
INTERNATIONAL
RECT IFI ER
L OG O
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7306
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.154)
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 (.208)
5.10 (.201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
FEED DIRECTION
TERMINATION
N UM BE R 1 2 .05 (.080)
1 .95 (.077)
0.35 (.013)
0.25 (.010)
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
15.40 (.607)
11.90 (.469)
2
50.00
(1.969)
M IN.
18.40 (.724)
MAX 3
14.40 (.5 66)
12.40 (.4 48)
3
33 0.00
(13.000)
M AX.
13.20 (.519)
12.80 (.504)
NOTES:
1 CO N F ORM S TO EIA -48 1-1
2 INCLUDES FLANGE DISTORTION @ OUTER EDGE
3 DIM E NSIONS M E AS URE D @ HUB
4 CON T ROLLING DIM ENSION : M ETR IC
1
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
