BAS86 SCHOTTKY BARRIER DIODE
FEATURES :
• For general purpose applications.
• This diode features low turn-on voltage. This
device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• This diode is also available in the DO-35 case
with type designation BAT86.
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics
(
Rating at
25
°
C ambient temperature unless otherwise specified
.)
Symbol Value Unit
Continuous Reverse Voltage VR50 V
Continuous Forward Current IF200(1) mA
Repetitive Peak Forward Current at tp < 1s, IFRM 500(1) mA
Power Dissipation PD200(1) mW
Thermal Resistance Junction to Ambient Air R
θ
JA 300(1) °C/W
Junction Temperature TJ125 °C
Ambient Operating Temperature Range Ta -65 to + 125 °C
Storage temperature range TS-65 to + 150 °C
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 50 - - V
Reverse Current IRVR = 40 V - - 5.0 µA
I
F
=
1
mA
-
0
.
275
0
.
380
Forward Voltage
I
F
=
10
mA
-
0
.
365
0
.
450
Pulse Test tp <
300
µ
s ,
δ
<
2
%
I
F
=
30
mA
-
0
.
460
0
.
600
I
F
=
100
mA
-
0
.
700
0
.
900
Diode Capacitance Cd VR = 1V, f = 1MHz - - 8 pF
I
F
=10mA to I
R
= 10mA ,
measured at I
R
= 1mA
Page 1 of 1 Rev. 03 : October 19, 2005
Test Condition
Parameter
Reverse Recovery Time
VF
Trr
V
ns
IR = 10 µA (pulsed)
5--
Dimensions in inches and ( millimeters )
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055
(
1
.
40
)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.098 (2.50)
Max.
0.079 (2.00)Min.
