MJ15002G - ON Semiconductor

August, 2011 − Rev. 5

1Publication Order Number:

MJ15001/D

MJ15001 (NPN),

MJ15002 (PNP)

Complementary Silicon

Power Transistors

The MJ15001 and MJ15002 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

•High Safe Operating Area (100% Tested) −5.0 A @ 40 V

0.5 A @ 100 V

•For Low Distortion Complementary Designs

•High DC Current Gain − hFE = 25 (Min) @ IC = 4 Adc

•These are Pb−Free Devices*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎÎ

140

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎ

VCBO

ÎÎÎÎÎ

140

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

VEBO

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current − Continuous

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current − Continuous

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current − Continuous

ÎÎÎ

ÎÎÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25°C

Derate above 25°C

ÎÎÎ

ÎÎÎÎÎ

200

1.14

ÎÎ

W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–65 to +200

ÎÎ

°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

ÎÎÎ

RqJC

ÎÎÎÎÎ

0.875

ÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes 1/16″ from Case for v 10 secs

ÎÎÎ

ÎÎÎÎÎ

265

ÎÎ

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

ORDERING INFORMATION

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 250 WATTS

TO−204AA

(Pb−Free)

MJ15002G

MJ15001G TO−204AA

(Pb−Free)

100 Units/Tray

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

MJ1500x = Device Code

x = 1 or 2

G= Pb−Free Package

A = Location Code

YY = Year

WW = Work Week

MEX = Country of Orgin

MJ1500xG

AYYWW

MEX

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC, = 200 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

140

ÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ÎÎÎÎ

ICEX

ÎÎÎÎ

−

ÎÎÎ

100

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

250

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1 s (non−repetitive))

(VCE = 100 Vdc, t = 1 s (non−repetitive))

ÎÎÎÎ

IS/b

ÎÎÎÎ

5.0

0.5

ÎÎÎ

−

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4 Adc, VCE = 2 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

150

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 2 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

ÎÎÎÎ

2.0

ÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

−

ÎÎÎ

1000

ÎÎÎ

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

IC, COLLECTOR CURRENT (AMP)

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5 7 10 200

2 3 50 70 10020 30

200

0.5

0.2

0.7

0.3

TC = 25°C

TJ = 200°C

BONDING WIRE LIMITED

THERMAL LIMITATION (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ (pk) = 200°C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

IC, COLLECTOR CURRENT (AMP)

0.7 1 2 3 5 107200.2 0.3 0.5 20.7 1 2 3 5 107200.2 0.3 0.5

Figure 2. Capacitances

IC, COLLECTOR CURRENT (AMP)

2.0

1.6

1.2

0.4

0.8

0.7 1 2 3 5 10720

IC, COLLECTOR CURRENT (AMP)VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Current−Gain — Bandwidth Product

Figure 4. DC Current Gain

700

500

1000

3 5 10 1502

300

200

100

IC, COLLECTOR CURRENT (AMP)

Figure 5. “On” Voltages

10 20 30 7050 1001.5

0.3 0.5 10.2

0.7

MJ15002 (PNP)

035 1070.1 2

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5

TJ = 25°C

VBE @ VCE = 2 Vdc

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

TJ = 100°C

25°C

100°C

2.0

1.6

1.2

0.4

0.8

00.7 1 2 3 5 107200.2 0.3 0.5

TJ = 100°C

25°C

hFE, DC CURRENT GAIN

VCE = 2 Vdc

TJ = 25°C

VCE = 10 V

ftest = 0.5 MHz

Cib

MJ15001

(NPN)

TJ = 25°C

MJ15001 (NPN)

MJ15002 (PNP)

hFE, DC CURRENT GAINV, VOLTAGE (VOLTS)

100

200

100

200

C, CAPACITANCE (pF)

Cib

Cob

MJ15001 MJ15002

VCE = 2 Vdc

TJ = 100°C

25°C

VBE @ VCE = 2 Vdc

TJ = 25°C

100°C

VCE(sat) @ IC/IB = 10

TJ = 100°C

25°C

TYPICAL CHARACTERISTICS

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T−SEATING

PLANE

2 PL

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

TO−204 (TO−3)

CASE 1−07

ISSUE Z

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

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Japan Customer Focus Center

Phone: 81−3−5773−3850

MJ15001/D

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