IXFT170N25X3HV - LITTELFUSE

IXFT170N25X3HV

IXFH170N25X3

IXFK170N25X3

VDSS = 250V

ID25 = 170A

RDS(on) 



 7.4m





Features

International Standard Packages

Low RDS(ON) and QG

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 250 V

VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V

IGSS VGS = 20V, VDS = 0V 100 nA

IDSS VDS = VDSS, VGS = 0V 10 A

TJ = 125C 1 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6.1 7.4 m

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 150C 250 V

VDGR TJ= 25C to 150C, RGS = 1M250 V

VGSS Continuous 20 V

VGSM Transient 30 V

ID25 TC= 25C 170 A

IL(RMS) External Lead Current Limit 160 A

IDM TC= 25C, Pulse Width Limited by TJM 400 A

IATC= 25C85A

EAS TC= 25C 2.3 J

dv/dt IS IDM, VDD  VDSS, TJ  150°C 20 V/ns

PDTC= 25C 890 W

TJ-55 ... +150 C

TJM 150 C

Tstg -55 ... +150 C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

MdMounting Torque (TO-247 & TO-264) 1.13 / 10 Nm/lb.in

Weight TO-268HV 4 g

TO-247 6 g

TO-264 10 g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

X3-Class HiPerFETTM

Power MOSFET

TO-268HV (IXFT)

G

D (Tab)

S

TO-247 (IXFH)

G

S

DD (Tab)

G = Gate D = Drain

S = Source Tab = Drain

TO-264 (IXFK)

S

G

DD (Tab)

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT170N25X3HV IXFH170N25X3

IXFK170N25X3

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

ISVGS = 0V 170 A

ISM Repetitive, pulse Width Limited by TJM 680 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 140 ns

QRM 770 nC

IRM 11 A

IF = 85A, -di/dt = 100A/μs

VR = 100V

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 10V, ID = 60A, Note 1 66 110 S

RGi Gate Input Resistance 1.3 

Ciss 13.5 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 2.3 nF

Crss 1.6 pF

Co(er) 800 pF

Co(tr) 3280 pF

td(on) 18 ns

tr 10 ns

td(off) 62 ns

tf 7 ns

Qg(on) 190 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC

Qgd 45 nC

RthJC 0.14 C/W

RthCS TO-247 0.21 C/W

TO-264 0.15 C/W

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 5 (External)

Effective Output Capacitance

Energy related

Time related

VGS = 0V

VDS = 0.8 • VDSS

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFT170N25X3HV IXFH170N25X3

IXFK170N25X3

Fig. 1. Output Characteristics @ TJ = 25

o

C

0

20

40

60

80

100

120

140

160

180

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

4V

Fig. 3. Output Characteristics @ TJ = 125

o

C

0

20

40

60

80

100

120

140

160

180

00.511.522.53

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

4V

7V

6V

5V

Fig. 4. RDS(on) Normalized to ID = 85A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 170A

I

D

= 85A

Fig. 5. RDS(on) Normalized to ID = 85A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 100 200 300 400 500 600 700 800

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 2. Extended Output Characteristics @ TJ = 25

o

C

0

100

200

300

400

500

600

700

800

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

8V

7V

9V

5V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

BV

DSS

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT170N25X3HV IXFH170N25X3

IXFK170N25X3

Fig. 7. Maximum Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

Fig. 9. Transconductance

0

40

80

120

160

200

240

0 40 80 120 160 200 240

I

D

- Amperes

g

f s

- Siemens

25

o

C

125

o

C

T

J

= - 40

o

C

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

100

200

300

400

500

600

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V

SD

- Volts

I

S

- Amperes

T

J

= 25

o

C

T

J

= 125

o

C

Fig. 11. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 125V

I

D

= 85A

I

G

= 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

100,000

1 10 100 1,000

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 8. Input Admittance

0

50

100

150

200

250

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125

o

C

25

o

C

- 40

o

C

IXFT170N25X3HV IXFH170N25X3

IXFK170N25X3

IXYS REF: F_170N25X3 (28-S301) 4-24-17

Fig. 15. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Second

Z(th)JC

- K / W

Fig. 14. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

1 10 100 1,000

VDS - Volts

ID - Amperes

T

J

= 150

o

C

T

C

= 25

o

C

Sin

g

le Pulse

1ms

100μs

R

DS(

on

)

Limit

10ms

100ms

DC

25μs

Fig. 13. Output Capacitance Stored Energy

0

4

8

12

16

20

24

0 40 80 120 160 200 240

VDS - Volts

EOSS - MicroJoules

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT170N25X3HV IXFH170N25X3

IXFK170N25X3

PINS:

1 - Gate 2 - Source

3 - Drain

TO-268HV Outline

TO-247 Outline

R

L1

A2

Q

E

A

D

c

B

A

b

C

L

D

S D2

E1

A2 A2 A2

e

0P1

ixys option

A1

b4

b2

D1

0P O 0K M D B M

+

O J M C A M

+

12 3

4

+

PINS: 1 - Gate

2, 4 - Drain

3 - Source

TO-264 Outline

Terminals: 1 = Gate

2 = Drain

3 = Source

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.