RF & Protection Devices
Data Sheet
Revision 2.0, 2015-03-13
BFP640F
Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2015-03-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP640F
Data Sheet 3 Revision 2.0, 2015-03-13
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP640F, Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2015-03-13, Revision 2.0
Page Subjects (major changes since last revision)
This data sheet replaces the revision from 2007-05-31. The reason for the new revision is to increase
the information content for the circuit designer. The performance parameters are now enlisted in a
table containing many relevant application frequencies. The measurements of typical devices have
been repeated and the device description has been expanded by adding several new characteristic
curves. For customers who bought the product prior to the issue of the new revision the old
specifications remain valid.
BFP640F
Table of Contents
Data Sheet 4 Revision 2.0, 2015-03-13
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
BFP640F
List of Figures
Data Sheet 5 Revision 2.0, 2015-03-13
Figure 4-1 Total Power Dissipation Ptot =f(TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP640F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC=f(VCE), IB= Parameter in µA . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE =f(IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC=f(VBE), VCE = 2 V . . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB=f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB=f(VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT=f(IC), f= 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 =f(IC), ZS=ZL=50 Ω, Parameters: VCE in V, f in MHz 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . 23
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP640F: R4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
BFP640F
List of Tables
Data Sheet 6 Revision 2.0, 2015-03-13
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE =3V, f= 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-4 AC Characteristics, VCE =3V, f= 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE =3V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE =3V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, VCE =3V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-8 AC Characteristics, VCE =3V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-9 AC Characteristics, VCE =3V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Tables
BFP640F
Product Brief
Data Sheet 7 Revision 2.0, 2015-03-13
1 Product Brief
The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device
is housed in a thin small flat plastic package with visible leads.
BFP640F
Features
Data Sheet 8 Revision 2.0, 2015-03-13
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB,
Bluetooth
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Linear low noise amplifier based on Infineon´s reliable,
high volume SiGe:C technology
• High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA
• High transition frequency fT = 42 GHz @ 3 V, 30 mA
•NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA
• Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA
• Low power consumption, ideal for mobile applications
• Very common as GPS low noise amplifier, see respective
application notes on Infineon internet page
• Easy to use Pb-free (RoHS compliant) and halogen-free
standard package with visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP640F TSFP-4-1 1 = B 2 = E 3 = C 4 = E R4s
BFP640F
Maximum Ratings
Data Sheet 9 Revision 2.0, 2015-03-13
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO
–
–
4.1
3.6
V Open base
TA = 25 °C
TA = -55 °C
Collector emitter voltage VCES – 13 V E-B short circuited
Collector base voltage VCBO – 13 V Open emitter
Emitter base voltage VEBO – 1.2 V Open collector
Collector current IC–50 mA–
Base current IB–3 mA–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –200mWTS ≤ 92 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP640F
Thermal Characteristics
Data Sheet 10 Revision 2.0, 2015-03-13
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot =f(TS)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS ––290K/W–
0 25 50 75 100 125 150
0
40
80
120
160
200
240
TS [°C]
Ptot [mW]
BFP640F
Electrical Characteristics
Data Sheet 11 Revision 2.0, 2015-03-13
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.1 4.7 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES –1
1
4001)
401)
1) Maximum values not limited by the device but by the short cycle time of the 100% test
nA VCE =13 V, VBE =0
VCE =5 V, VBE =0
E-B short circuited
Collector base leakage current ICBO –140
1) nA VCB =5V, IE=0
Open emitter
Emitter base leakage current IEBO –140
1) nA VEB =0.5V, IC=0
Open collector
DC current gain hFE 110 180 270 VCE =3V, IC= 30 mA
Pulse measured
Table 5-2 General AC Chara cteri st ic s at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–42–GHzVCE =3V, IC=30mA
f=1 GHz
Collector base capacitance CCB –0.09–pFVCB =3V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.2–pFVCE =3V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.47–pFVEB =0.5V,VCB =0
f=1MHz
Collector grounded
BFP640F
Electrical Characteristics
Data Sheet 12 Revision 2.0, 2015-03-13
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA=25°C
Figure 5-1 BFP640F Testing Circuit
OUT
IN
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP640F
Electrical Characteristics
Data Sheet 13 Revision 2.0, 2015-03-13
Table 5-3 AC Characteristics, VCE =3V, f=0.45GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
33
31
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
26
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
10.5
23.5
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
Table 5-4 AC Characteristics, VCE =3V, f=0.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
28.5
26.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.55
23.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12.5
26
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
Table 5-5 AC Characteristics, VCE =3V, f=1.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25
22.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
20.5
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12
26
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
BFP640F
Electrical Characteristics
Data Sheet 14 Revision 2.0, 2015-03-13
Table 5-6 AC Characteristics, VCE =3V, f=1.9GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
23
20.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.6
19
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12.5
27
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
Table 5-7 AC Characteristics, VCE =3V, f=2.4GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
20
18.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.65
17
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12.5
28
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
Table 5-8 AC Characteristics, VCE =3V, f=3.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
16.5
15.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.75
14
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12
27.5
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
BFP640F
Electrical Characteristics
Data Sheet 15 Revision 2.0, 2015-03-13
Note:OIP3 value depends on termination of all intermo dulation frequency components. Termination use d for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-9 AC Characteristics, VCE =3V, f=5.5GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
12.5
11.5
–
–
dB IC=25mA
IC=25mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.0
11
–
–
dB IC=6mA
IC=6mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
12.5
27.5
–
–
dBm ZS=ZL=50Ω
IC=25mA
IC=25mA
BFP640F
Electrical Characteristics
Data Sheet 16 Revision 2.0, 2015-03-13
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs . Collector Emitter Voltage IC=f(VCE), IB= Parameter in µA
Figure 5-3 DC Current Gain hFE =f(IC), VCE =3V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
5
10
15
20
25
30
VCE [V]
IC [mA]
20µA
40µA
60µA
80µA
100µA
120µA
140µA
160µA
100101102
102
103
Ic [mA]
hFE
BFP640F
Electrical Characteristics
Data Sheet 17 Revision 2.0, 2015-03-13
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC=f(VBE), VCE =2V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB=f (VBE), VCE =2V
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
10−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFP640F
Electrical Characteristics
Data Sheet 18 Revision 2.0, 2015-03-13
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB=f(VEB), VCE =2V
0.6 0.7 0.8 0.9 1 1.1 1.2
10−13
10−12
10−11
10−10
10−9
VEB [V]
IB [A]
BFP640F
Electrical Characteristics
Data Sheet 19 Revision 2.0, 2015-03-13
5.5 Characteristic AC Diagrams
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA=25°C.
Figure 5-7 Transition Frequency fT=f(IC), f= 1 GHz, VCE = Parameter in V
Figure 5-8 3rd Order Intercept Point at output OIP3 =f(IC), ZS=ZL=50 Ω, Parameters: VCE in V, f in MHz
0 10 20 30 40 50 60
0
5
10
15
20
25
30
35
40
45
IC [mA]
fT [GHz]
4.00V
3.00V
2.50V
2.00V
1.50V
1.00V
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
IC [mA]
OIP3 [dBm]
2V, 1500MHz
3V, 1500MHz
2V, 2400MHz
3V, 2400MHz
BFP640F
Electrical Characteristics
Data Sheet 20 Revision 2.0, 2015-03-13
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
Figure 5-10 Compression Point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
8
9
1
0
1
1
1
2
13
14
15
16
17
17
18
18
18
19
19
19
19
20
20
20
20
20
21
21
21
21
21
22
22
22
22
22
23
23
23
23
2
3
24
24
24
24
25
25
25
25
2
6
26
26
26
27
27
27
28
28
29
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
−2
−1
−1
−1
0
0
0
0
1
1
1
1
2
2
2
2
3
3
3
3
3
4
4
4
4
4
5
5
5
5
5
6
6
6
6
6
7
7
7
7
7
8
8
8
8
9
9
9
9
10
10
10
10
11
11
11
12
12
13
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
BFP640F
Electrical Characteristics
Data Sheet 21 Revision 2.0, 2015-03-13
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f =1 MHz
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 3 V, IC = 25 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.04
0.08
0.12
0.16
0.2
VCB [V]
CCB [pF]
0 2 4 6 8 10
0
5
10
15
20
25
30
35
40
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFP640F
Electrical Characteristics
Data Sheet 22 Revision 2.0, 2015-03-13
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz
0 10 20 30 40 50 60
0
5
10
15
20
25
30
35
40
45
IC [mA]
G [dB]
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
10.00GHz
0 1 2 3 4 5
0
5
10
15
20
25
30
35
40
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
VCE [V]
G [dB]
BFP640F
Electrical Characteristics
Data Sheet 23 Revision 2.0, 2015-03-13
Figure 5-15 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 25 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03
1.0
0.03 to 6 GHz
1.0
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
0.03
6.0mA
25mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
8.0
0.45
0.9
1.5
1.9
2.4
3.5
5.5
8.0
10.0
0.45
1.5
2.4
3.5
5.5
10.0
0.45 to 10 GHz
6mA
25mA
BFP640F
Electrical Characteristics
Data Sheet 24 Revision 2.0, 2015-03-13
Figure 5-17 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 25 mA
Figure 5-18 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
1.0
2.0
3.0
4.0
5.0
6.0
0.03
1.0
2.0
3.0
4.0
5.0
6.0 0.03
6.0mA
25mA
0 1 2 3 4 5 6 7 8 9 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 6.0mA
IC = 25mA
BFP640F
Electrical Characteristics
Data Sheet 25 Revision 2.0, 2015-03-13
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been g enerated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
0 5 10 15 20 25 30 35 40
0
0.5
1
1.5
2
2.5
3
IC [mA]
NFmin [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.5GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
0 5 10 15 20 25 30 35 40
0
0.5
1
1.5
2
2.5
3
3.5
4
IC [mA]
NF50 [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.5GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
BFP640F
Simulation Data
Data Sheet 26 Revision 2.0, 2015-03-13
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP640F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFP640F SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP640F
Package Information TSFP-4-1
Data Sheet 27 Revision 2.0, 2015-03-13
7 Package Information TSFP-4-1
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP640F: R4s)
Figure 7-4 Tape Dimensions
10° MAX.
±0.05
0.2
±0.05
1.4
12
±0.05
0.8
1.2 ±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5
±0.05
0.5
±0.05
43
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
TSFP-4-1, -2-TP V05
40.2
1.4
8
Pin 1 1.55 0.7
