FAIRCHILD SEMI CONDUCTOR a ay ve Bsueqezu 0027879 4 i IRF230-233/IRF630-633 7-37-c ee FAIRCHILD MTP12N18/12N20 TT: 39-13 A Schlumberger Company N-Channel Power MOSFETs, 12 A, 150-200 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed 8 applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. UY @ Low Rosvon) Vas Rated at 20 V tso0010F @ Silicon Gate for Fast Switching Speeds Ipss; Vps(on); Specified at Elevated Temperature IRF230 IRF630 IRF231 IRF631 Rugged IRF232 IRF632 @ Low Drive Requirements IRF233 IRF633 Ease of Paralleling MTP12N18 MTP12N20 Product Summary Ip at Ip at Part Number Voss Ros (on) Te = 25C Te = 100C Case Style IRF230 200 V 0.40 2 9.0 A 6.0 A TO-204AA IRF231 150 V 0.40 2 9.0 A 6.0 A IRF232 200 V 0.50 2 80A 5.0 A |RF233 150 V 0.50 2 8.0 A 5.0 A IRF630 200 V 0.40 2 9.0A 6.0A TO-220AB {RF631 150 V 0.40 2 90A 6.0A IRF632 200 V 0.50 2 BOA 50 A IRF633 150 V 0.50 22 8.0A 5.0 A MTP12N18 180 V 0.35 2 12 A B5A MTP12N20 200 V 0.35 2 12 A B5A Notes For information concerning connection diagram and package ouiline, refer io Section 7. 2-92on oo. - . FAIRCHILD SEMICONDUCTOR BL O08 ee mca ae nee a ee a ay ef sueae74 ooz7aa0 0 Ef. = IRF230-233/IRF630-633 MTP12N18/12N20 T-39-11 eatin T 39-13 Maximum Ratings Rating (RF220/222 Rating iIRF620/622 Rating IRF222/223 Symbol Characteristic MTP7N20 MTP7N18 IRF622/623 Unit Voss Drain to Source Voltage? 200 180 150 v Vocr Drain to Gate Voltage 200 180 150 V Reg = 20 kQ Ves Gate to Source Voltage 20 +20 +20 Vv Ty. Tstg | Operating Junction and -55 to +150 -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 275 275 275 C for Soldering Purposes, 1/8 From Case for 5 s Maximum Thermal Characteristics IRF220 - 233 IRF630 - 633 MTP12N18/20 Reic Thermal Resistance, 1.67 4.25 C/W Junction to Case Pp Total Power Dissipation 75 400 Ww at To = 25C lpm Pulsed Drain Current? 40 40 A Electrica! Characteristics (To = 25C unless otherwise noted) Symbol! Characteristic | Min | Max | Unit Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage v Ves =0 V, Ip = 250 pA IRF230/232/630/632/ 200 MTP12N20 MTP12N18 180 IRF231/233/631/633 150 loss Zero Gate Voltage Drain Current 250 BA Vos = Rated Voss, Vas = 0 V 1000 pA Vos = 0.8 x Rated Vpss, Vas =0 V, To = 126C lass Gate-Body Leakage Current nA Ves = +20 V, Vos =0 V , IRF230-233 100 IRF630-633/ +500 MTP12N18/12N20 2-93emt FAIRCHILD SEMICONDUCTOR a pe Bsunce74 Oo278al 2 I IRF230-233/IRF630-633 MTP12N18/12N20 = 7.39.1) T3913 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions On Characteristics Vestn) Gate Threshold Voltage Vv IRF230/233/630/633 2.0 4.0 Ip = 250 pA, Vos = Ves i MTP12N18/12N20 2.0 4.5 ip = 1 mA, Vps = Ves I Roston) Static Drain-Source On-Resistance 2 Ves =10 V, lp =5.0A ; IRF230/231/630/631 0.40 IRF232/233/632/633 0.50 3 MTP12N18/12N20 0.35 IDp=6.0 A : Vpston) Drain-Source On-Voltage 2.1 v Vas =10 V; Ip=6.0 A : MTP12N18/12N20 5.0 Vv Ves = 10 V; Ip = 12.0 A; : 4.2 Vv Vas = 10 V; In =6.0 A i Tce = 100C ; Gis Forward Transconductance 3.0 S$ @) Vps = 10 V, Ip =5.0 A Dynamic Characteristics Ciss Input Capacitance 800 pF Vos = 25 V, Vas =0 V Coss Output Capacitance 450 pF f= 1.0 MHz Cres Reverse Transfer Capacitance 150 pF Switching Characteristics (Tc = 25C, Figures 1, 2)! toon) Turn-On Delay Time 30 ns Vpp = 90 V, Ip =5.0 A i tr Rise Time 50 ns nes = i. % Raen = 15 2 tacoth Turn-Off Delay Time 50 ns t Fall Time 40 ns taon) Turn-On Delay Time 50 ns Vpp = 25 V, Ip=6.0 A t Rise Time 250 ns nos to % Raen = 50 8 tufofh Turn-Off Delay Time 100 ns ; t Fail Time 120 ns ; Qq Total Gate Charge 30 nc Vag = 10 V, Ip=12 A : Vpp = 120 V f 2-94FAIRCHILD SEMICONDUCTOR ay pe Bsuegn7y OOe27daee 4 i. ee ON ee } IRF230-233/IRF630-633 i MTP12N18/12N20 T-39-11 Tr 39-1 Mee o seme pe ke Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Typ Max | Unit | Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF230/231/630/631 1.25 2.0 Vv Ig =9.0 A; Veg=0 V {RF232/233/632/633 1.25 1.8 Vv ig = 8.0 A; Veg =O V set te Reverse Recovery Time 450 ns Ig = 4.0 A; Ig/dt = 25 A/uS 2 Notes 4. Ty = 425C to + 150C 2, Pulse width limited by Ty. 3. Switching time measurements performed on LEM TR-58 test equipment. banner Typical Electrical Characteristics Figure 1 Switching Test Circult Figure 2 Switching Waveforms Vin Voo RL PULSE GENERATOR Vour OUTPUT, Vout oe INVERTED 1 - woe ee eee tae eerenernsenemmemlit yy 3 Res INPUT, Vin Le a CAMASOF Typical Performance Curves ' Figure 4 Static Drain to Source Resistance Figure 3 Output Characteristics vs Drain Current 8 { 3 E oo Q 28 8 Be z QB = zo a ae 4 i & 8 = 0 1 2 3 a 5 5 4 8 12 16 20 VosDRAIN SOURCE VOLTAGEV Ip QAAIN CURRENTA PCIOZ6OF Po1e270F 2-95poner FATRCHILD SEMICONDUCTOR IRF230-233/IRF630-633 MTP12N18/12N20 T-39-11 T 39-13 Typical Performance Curves (Cont.) Figure 5 Transfer Characteristics B = 10V 16 4 12 w IbDRAIN CURRENTA = Ty = o 1 3 7? s VagGATE TO SOURCE VOLTAGEV Porezeor Figure 7 Capacitance vs Drain to Source Voltage to4 5 5 3 dy 10 Zs = 2 = oO 3 10? 3 10! 10 108 5 10? YpsDRAIN TO SOURCE VOLTAGEV PC1OZo0F Figure 9 Forward Biased Safe Operating Area for IRF230-233 and !IRF630-633 102 5 2 < I aah 5 108 Z g IN THIS AREA MAY Z 2 BY < & yj 10 2 5 ETe = Ty 180C SINGLE PULSE 2 FF sme CURRENT 10- 1 10 2 5 wh2 02 2 6 103 Vps DRAIN TO SOURCE VOLTAGEV PC1S70F Figure 6 Temperature Variation of Gate to Source Threshold Voltage 13 w g < 5 3 > a i o 5 8 1.0 = - 0.9 E oa 08 5 < Zz 07 oa z 0 =50 0 50 100 150 T,JUNCTION TEMPERATURE*C PCOss4 iF Figure 8 Gate to Source Voltage vs Total Gate Charge Yoo = VasGATE TO SOURCE VOLTAGEV a 10 20 ao 50 QgTOTAL GATE CHARGEnc PCIOS0OF Figure 10 Transient Thermal Resistance vs Time for IRF230-233 and IRF630-633 3 oA 1 tip ke ft ot Duty Factor, D = 4 apply to train of heating puless Tyuaxy = Te + Par Zthy-C-~ TRANSIENT THERMAL RESISTANCE"C/W * g 10-3 10-1 100 10" 107 109 10* tTIME~ms 2-96ay pe Bf seec.74 ooazaay a ED fp FAIRCHILD SEMICONDUCTOR IRF230-233/IRF630-633 MTP12N18/12N20 -_39-1] TT Bq-12 Typical Performance Curves (Cont) Figure 11 Forward Biased Safe Operating Area for MTP12N18/12N20 5 LIMITED BY Ip-DRAIN CURRENTA T)=150C 2 | SINGLE 10-1 Ss tt 2 107,07 VosDRAIN TO SOURCE VOLTAGEV Pers Zth-cTRANSIENT THERMAL Figure 12 Transient Thermal! Resistance vs Time for MTP12N18/12N20 tot S 2 Pu RESISTANCEC/W t et tp t Duty Factor, D = 2 apply to rain Tagaax) = Te + Pye 107? 107 t--TIMEms Pe wo20F 2-97