Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N4957
Silicon PNP Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4957J)
• JANTX level (2N4957JX)
• JANTXV level (2N4957JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• VHF-UHF amplifier transistor
• PNP silicon transistor
Features
• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chip geometry 0006
• Reference document:
MIL-PRF-19500/426
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 30
Volts
Collector-Base Voltage VCBO 30
Volts
Emitter-Base Voltage VEBO 3
Volts
Collector Current, Continuous IC 30
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 200
1.14
mW
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N4957
Silicon PNP Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 1 mA 30 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 20 Volts
VCB = 30 Volts
VCB = 20 Volts, TA = 150°C
100
100
100
nA
µA
µA
Emitter-Base Cutoff Current IEBO1 V
EB = 3 Volts 100 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 mA, VCE = 10 Volts
IC = 2 mA, VCE = 10 Volts
IC = 5 mA, VCE = 10 Volts
IC = 5 mA, VCE = 10 Volts
TA = -55°C
15
20
30
10
165
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 2 mA,
f = 100 MHz 12 36
Common-Emitter small signal power
gain GPE IC = 2 mA, VCE = 10 Volts,
f = 450 MHz 17 25 dB
Noise Figure NF VCE = 10 Volts, IC = 2 mA,
f = 450 MHz, RL = 50 Ω 3.5 dB
Collector Base time constant rb’CC VCB = 10 Volts, IE = 2 mA,
f = 63.6 MHz 1 8 ps
Collector Base feedback capacitance Ccb VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 0.8 pF
