1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
54 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCX 19, BCX 20 General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCX 19 BCX 20
Collector-Emitter-voltage B open VCE0 45 V 25 V
Collector-Base-voltage E open VCB0 50 V 30 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) IC500 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 1 A
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V ICB0 – – 100 nA
IE = 0, VCB = 20 V, Tj = 150/CI
CB0 ––5 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA VCEsat – – 620 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
55
01.11.2003
General Purpose Transistors BCX 19 , BCX 20
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 1 V, IC = 100 mA hFE 100 – 600
VCE = 1 V, IC = 300 mA hFE 70 – –
VCE = 1 V, IC = 500 mA hFE 40 – –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 1 V, IC = 500 mA VBEon – – 1.2 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 5 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCX 17, BCX 18
Marking – Stempelung BCX 19 = U1 BCX 20 = U2
