DSA300I200NA
preliminary
2
3
1
4
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode
Part number
DSA300I200NA
Backside: Isolated
FAV
F
V V0.91
RRM
300
200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20210309bData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA300I200NA
preliminary
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
1.03
R0.15 K/W
R
min.
300
V
RSM
3T = 25°C
VJ
T = °C
VJ
mA30V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
95
P
tot
830 WT = 25°C
C
RK/W
300
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.29
T = 25°C
VJ
150
V
F0
0.57T = °C
VJ
150
r
F
1.03
mΩ
0.91T = °C
VJ
I = A
F
300
1.22
I = A
F
600
I = A
F
600
threshold voltage
slope resistance for power loss calculation only
mA
125
V
RRM
200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
2.22
junction capacitance
V = V24 T = 25°Cf = 1 MHz
RVJ
nF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
150
4.80 kA
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.1
IXYS reserves the right to change limits, conditions and dimensions. 20210309bData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA300I200NA
preliminary
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
123456yywwZ
XXXXX
Product Marking
Logo
Part
Number
Date
Code
Lot#Location
®
UL
D
S
A
300
I
200
NA
Part description
Diode
Schottky Diode
low VF
Single Diode
SOT-227B (minibloc)
=
=
=
DSA300I100NA SOT-227B (minibloc) 100
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.5
mounting torque
1.1
T
VJ
°C150
virtual junction temperature
-40
Weight g30
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm1.5
terminal torque
1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
SOT-227B (minibloc)
Similar Part Package Voltage class
DSA300I45NA SOT-227B (minibloc) 45
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
1)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA300I200NA 511258Tube 10DSA300I200NAStandard
3000
ISOL
T
stg
°C150
storage temperature
-40
2500
threshold voltage
V0.57
mΩ
V
0 max
R
0 max
slope resistance *
0.21
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Schottky
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20210309bData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA300I200NA
preliminary
2
3
1
4
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20210309bData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved
DSA300I200NA
preliminary
0.4 0.8 1.2
0
100
200
300
400
500
600
0 50 100 150
0.0001
0.001
0.01
0.1
1
10
0 50 100 150 200 250
0
50
100
150
200
250
0 50 100 150 200
2000
4000
6000
8000
10000
125°C
75°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
I
F(AV)
[A]
P
(AV)
[W]
Z
thJC
[K/W]
t [ms]
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4a Power dissipation versus direct output current
Fig. 4b and ambient temperature
F
i
g
.
6
T
r
a
n
s
i
en
t
t
h
e
r
m
a
l
i
m
p
e
d
a
n
c
e
j
un
c
t
i
o
n
t
o
c
a
s
e
T
VJ
=
25°C
125°C
150°C
T
VJ
= 25°C
T
VJ
=175°C
150°C
100°C
50°C
25°C
0 40 80 120 160
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0 40 80 120 160
0
50
100
150
200
250
300
350
T
C
[°C]
Fig. 5 Average forward current
I
F(AV)
vs. case temp. T
C
I
F(AV)
[A]
T
amb
[°C]
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thi
[K/W]
0.017
0.013
0.02
0.05
0.05
t
i
[s]
0.01
0.00001
0.01
0.045
0.3
dc =
1
0.5
0.4
0.33
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20210309bData according to IEC 60747and per semiconductor unless otherwise specified
© 2021 IXYS all rights reserved