BTS621L1E3128ABUMA1 - INFINEON TECHNOLOGIES AG

PROFET® BTS621L1

Data Sheet 1 2013-10-11

Smart Two Channel High-Side Power Switch

Features

 Overload protection

 Current limitation

 Short circuit protection

 Thermal shutdown

 Overvoltage protection (including load dump)

 Fast demagnetization of inductive loads

 Reverse battery protection

1

)

 Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

 Open drain diagnostic output

 Open load detection in ON-state

 CMOS compatible input

 Loss of ground and loss of Vbb protection

 Electrostatic discharge (ESD) protection

 Green Product (RoHS compliant)

 AEC Qualified

Application

 C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

 All types of resistive, inductive and capacitve loads

 Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

1

) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST

connection, reverse load current limited by connected load.

Product Summary

Overvoltage protection

Vbb(AZ)

43

V

Operating voltage

Vbb(on)

5.0 ... 34

V

channels:

each

both

parallel

On-state resistance

RON

100

50

m

Load current (ISO)

IL(ISO)

4.4

8.5

A

Current limitation

IL(SCr)

8

A

PG-TO263-7-2

+ V

bb

IN1

ST

Signal GND

ESD

PROFET



OUT1

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection 1

Short to Vbb

Level shifter

Temperature

sensor 1

Rectifier 1

Limit for

unclamped

ind. loads 1

Gate 1

protection

Current

limit 1

3

5

2

4

1

Load GND

Load

V

Logic

Overvoltage

protection

OUT2

Open load

detection 2

Short to Vbb

Level shifter

Temperature

sensor 2

Rectifier 2

Limit for

unclamped

ind. loads 2

Gate 2

protection

Current

limit 2

7

IN2

6

GND

R

O1

O2

Charge

pump 1

Charge

pump 2

BTS621L1

Data Sheet 2 2013-10-11

Symbol

Function

1

OUT1 (Load, L)

Output 1, protected high-side power output of channel 1

2

GND

Logic ground

3

IN1

Input 1, activates channel 1 in case of logical high signal

4

Vbb

Positive power supply voltage,

the tab is shorted to this pin

5

ST

Diagnostic feedback: open drain, low on failure

6

IN2

Input 2, activates channel 2 in case of logical high signal

7

OUT2 (Load, L)

Output 2, protected high-side power output of channel 2

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 4)

Vbb

43

V

Supply voltage for short circuit protection

Tj Start=-40 ...+150°C

Vbb

34

V

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V

RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high

VLoad dump4)

60

V

Load current (Short circuit current, see page 5)

IL

self-limited

A

Operating temperature range

Storage temperature range

Tj

Tstg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC), TC  25 °C

Ptot

75

W

Inductive load switch-off energy dissipation, single pulse

Vbb = 12V, Tj,start = 150°C, TC = 150°C const.

one channel, IL = 4.4 A, ZL = 32 mH, 0 :

EAS

395

mJ

both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 :

790

see diagrams on page 9

Electrostatic discharge capability (ESD) IN:

(Human Body Model) all other pins:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

VESD

1.0

2.0

kV

Input voltage (DC)

VIN

-10 ... +16

V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 7

IIN

IST

2.0

5.0

mA

2

) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a

150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the

protection of the input is integrated.

3

) RI = internal resistance of the load dump test pulse generator

4

) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

BTS621L1

Data Sheet 3 2013-10-11

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

typ

max

Thermal resistance chip - case, both channels:

each channel:

junction - ambient (free air):

RthJC

RthJA

--

1.7

3.4

75

K/W

SMD version, device on PCB5):

35

5

) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb

connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter and Conditions, each channel

Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1 or 7)

IL = 2 A Tj=25 °C:

each channel Tj=150 °C:

RON

--

80

160

100

200

m

Nominal load current, ISO Norm (pin 4 to 1 or 7)

VON = 0.5 V, TC = 85 °C each channel:

both channels parallel:

IL(ISO)

3.5

6.8

4.4

8.5

--

A

Output current (pin 1 or 7) while GND disconnected

or GND pulled up, Vbb=30 V, VIN= 0, see diagram

page 8

IL(GNDhigh)

--

10

mA

Turn-on time IN to 90% VOUT:

Turn-off time IN to 10% VOUT:

RL = 12 , Tj =-40...+150°C

ton

toff

80

200

400

s

Slew rate on

10 to 30% VOUT, RL = 12 , Tj =-40...+150°C

dV /dton

0.1

--

1

V/s

Slew rate off

70 to 40% VOUT, RL = 12 , Tj =-40...+150°C

-dV/dtoff

0.1

--

1

V/s

BTS621L1

Parameter and Conditions, each channel

Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Data Sheet 4 2013-10-11

Operating Parameters

Operating voltage6) Tj =-40...+150°C:

Vbb(on)

5.0

--

34

V

Undervoltage shutdown Tj =-40...+150°C:

Vbb(under)

3.5

--

5.0

V

Undervoltage restart Tj =-40...+25°C:

Tj =+150°C:

Vbb(u rst)

--

5.0

7.0

V

Undervoltage restart of charge pump

see diagram page 13 Tj =-40...+150°C:

Vbb(ucp)

--

5.6

7.0

V

Undervoltage hysteresis

Vbb(under) = Vbb(u rst) - Vbb(under)

Vbb(under)

--

0.2

--

V

Overvoltage shutdown Tj =-40...+150°C:

Vbb(over)

34

--

43

V

Overvoltage restart Tj =-40...+150°C:

Vbb(o rst)

33

--

V

Overvoltage hysteresis Tj =-40...+150°C:

Vbb(over)

--

0.5

--

V

Overvoltage protection7) Tj =-40...+150°C:

Ibb=40 mA

Vbb(AZ)

42

47

--

V

Standby current (pin 4)

VIN=0 Tj=-40...+25°C:

Tj= 150°C:

Ibb(off)

--

14

17

30

35

A

Leakage output current (included in Ibb(off))

VIN=0

IL(off)

--

12

A

Operating current (Pin 2)8), VIN=5 V

both channels on, Tj =-40...+150°C

IGND

--

4

6

mA

Operating current (Pin 2)8)

one channel on, Tj =-40...+150°C:

IGND

--

2

3

mA

6

) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V

7

) See also VON(CL) in table of protection functions and circuit diagram page 8.

8

) Add IST, if IST > 0, add IIN, if VIN>5.5 V

BTS621L1

Parameter and Conditions, each channel

Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Data Sheet 5 2013-10-11

Protection Functions

9

)

Initial peak short circuit current limit (pin 4 to 1

or 7)

IL(SCp)

Tj =-40°C:

Tj =25°C:

Tj =+150°C:

11

9

5

18

14

8

25

22

14

A

Repetitive short circuit shutdown current limit

IL(SCr)

Tj = Tjt (see timing diagrams, page 11)

--

8

--

A

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:

VON(CL)

41

47

53

V

Thermal overload trip temperature

Tjt

150

--

°C

Thermal hysteresis



Tjt

--

10

--

K

Reverse battery (pin 4 to 2) 10)

-Vbb

--

32

V

Reverse battery voltage drop (Vout > Vbb)

IL = -2.9 A, each channel Tj=150 °C:

-VON(rev)

--

610

--

mV

Diagnostic Characteristics

Open load detection current Tj=-40 °C:

(on-condition) Tj=25 ..150°C:

IL (OL)

20

--

400

300

mA

Open load detection voltage11) (off-condition)

Tj=-40..150°C:

VOUT(OL)

2

3

4

V

Internal output pull down

(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C

RO

4

10

30

k

9

) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are

not designed for continuous repetitive operation.

10

) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 2 and circuit page 8).

11

) External pull up resistor required for open load detection in off state.

BTS621L1

Parameter and Conditions, each channel

Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Data Sheet 6 2013-10-11

Input and Status Feedback12)

Input resistance

Tj=-40..150°C, see circuit page 7

RI

2.5

3.5

6

k

Input turn-on threshold voltage Tj =-40..+150°C:

VIN(T+)

1.7

--

3.5

V

Input turn-off threshold voltage Tj =-40..+150°C:

VIN(T-)

1.5

--

V

Input threshold hysteresis

 VIN(T)

--

0.5

--

V

Off state input current (pin 3 or 6), VIN = 0.4 V,

Tj =-40..+150°C

IIN(off)

1

--

50

A

On state input current (pin 3 or 6), VIN = 3.5 V,

Tj =-40..+150°C

IIN(on)

20

50

90

A

Delay time for status with open load after switch

off (other channel in off state)

(see timing diagrams, page 12), Tj =-40..+150°C

td(ST OL4)

100

320

800

s

Delay time for status with open load after switch

off (other channel in on state)

(see timing diagrams, page 12), Tj =-40..+150°C

td(ST OL5)

--

5

20

s

Status invalid after positive input slope

(open load) Tj=-40 ... +150°C:

td(ST)

--

200

600

s

Status output (open drain)

Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:

ST low voltage Tj =-40...+25°C, IST = +1.6 mA:

Tj = +150°C, IST = +1.6 mA:

VST(high)

VST(low)

5.4

--

6.1

--

0.4

0.6

V

12

) If a ground resistor RGND is used, add the voltage drop across this resistor.

BTS621L1

Data Sheet 7 2013-10-11

Truth Table

IN1

IN2

OUT1

OUT2

ST

BTS621L1

Normal operation

L

H

L

H

L

H

L

H

L

H

L

H

Open load

Channel 1

L

H

L

H

X

Z

H

L

H

X

H(L13))

H

L

Channel 2

L

H

X

L

H

L

H

X

Z

H

H(L13))

H

L

Short circuit to Vbb

Channel 1

L

H

L

H

X

H

L

H

X

L14)

H

H(L15))

Channel 2

L

H

X

L

H

L

H

X

H

L14)

H

H(L15))

Overtemperature

both channel

L

X

H

L

H

X

L

H

L

Channel 1

L

H

X

L

X

H

L

Channel 2

X

L

H

X

L

H

L

Undervoltage/ Overvoltage

X

L

H

L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit

H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

13

) With additional external pull up resistor

14

) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND

is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.

15

) Low resistance to Vbb may be detected in the ON-state by the no-load-detection

Terms

PROFET

V

IN2

ST OUT2

GND

bb

VST

VIN1

IST

IIN1

Vbb Ibb

IL2

VOUT2

IGND

VON2

1

2

4

3

5

IN1

VIN2

IIN2

VOUT1

VON1

IL1

OUT1

6

7

RGND

Input circuit (ESD protection)

IN

GND

I

R

ESD-ZD I

I

ESD zener diodes are not to be used as voltage clamp

at DC conditions. Operation in this mode may result in

a drift of the zener voltage (increase of up to 1 V).

BTS621L1

Data Sheet 8 2013-10-11

Status output

ST

GND

ESD-

ZD

+5V

RST(ON)

ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 380  at 1.6 mA, ESD zener diodes are not

to be used as voltage clamp at DC conditions.

Operation in this mode may result in a drift of the zener

voltage (increase of up to 1 V).

Inductive and overvoltage output clamp

+ Vbb

OUT

GND PROFET

VZ

VON

VON clamped to 47 V typ.

Overvolt. and reverse batt. protection

+ Vbb

IN2

ST

R

GND

R

Signal GND

Logic

VZ2

IN1 RI

VZ1

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ

RGND= 150 

Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); IN

high

Open load

detection

Logic

unit

+ Vbb

OUT

ON VON

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

Open load

detection

Logic

unit

VOUT

Signal GND

REXT

RO

OFF

GND disconnect

PROFET

V

IN2

ST OUT2

GND

bb

Vbb Ibb

1

2

4

3

5

IN1 OUT1

6

7

VIN1VIN2 VST VGND

Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) .

Due to VGND >0, no VST = low signal available.

BTS621L1

Data Sheet 9 2013-10-11

GND disconnect with GND pull up

PROFET

V

IN2

ST OUT2

GND

bb

Vbb

1

2

4

3

5

IN1 OUT1

6

7

VIN1

VIN2

VST VGND

Any kind of load. If VGND > VIN - VIN(T+) device stays off

Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive

load

PROFET

V

IN2

ST OUT2

GND

bb

Vbb

1

2

4

3

5

IN1 OUT1

6

7

high

Normal load current can be handled by the PROFET

itself.

Vbb disconnect with charged external

inductive load

PROFET

V

IN2

ST OUT2

GND

bb 1

2

4

3

5

IN1 OUT1

6

7

Vbb

high

D

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

Inductive Load switch-off energy

dissipation

PROFET

V

IN

ST

OUT

GND

bb

=

E

EAS

bb

L

R

ELoad

L

RL

{ZL

Energy stored in load inductance:

EL = 1/2·L·I2

L

While demagnetizing load inductance, the energy

dissipated in PROFET is

EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt,

with an approximate solution for RL  0 :

EAS= IL· L

2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL

|VOUT(CL)| )

Maximum allowable load inductance for

a single switch off (both channels parallel)

L = f (IL ); Tj,start = 150°C,TC = 150°C const.,

Vbb = 12 V, RL = 0 

L [mH]

1

10

100

1000

10000

3 5 7 9 11

IL [A]

BTS621L1

Data Sheet 10 2013-10-11

Typ. transient thermal impedance chip case

ZthJC = f(tp), one Channel active

ZthJC [K/W]

0.01

0.1

1

10

1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

0

0.01

0.02

0.05

0.1

0.2

0.5

D=

tp [s]

Typ. transient thermal impedance chip case

ZthJC = f(tp), both Channel active

ZthJC [K/W]

0.01

0.1

1

1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1

0

0.01

0.02

0.05

0.1

0.2

0.5

D=

tp [s]

BTS621L1

Data Sheet 11 2013-10-11

Timing diagrams

Both channels are symmetric and consequently the diagrams

are valid for each channel as well as for permuted channels

Figure 1a: Vbb turn on:

IN2

V

OUT1

t

V

bb

ST open drain

IN1

V

OUT2

Figure 2a: Switching a lamp:

IN

ST

OUT

L

t

V

I

Figure 2b: Switching an inductive load

IN

ST

L

t

V

I

*)

OUT

t

d(ST)

I

L(OL)

*) if the time constant of load is too large, open-load-status may

occur

Figure 3a: Short circuit

shut down by overtempertature, reset by cooling

IN

ST

L

t

I

other channel: normal operation

L(SCr)

I

L(SCp)

Heating up may require several milliseconds, depending on

external conditions

BTS621L1

Data Sheet 12 2013-10-11

Figure 4a: Overtemperature:

Reset if Tj <Tjt

IN

ST

OUT

J

t

V

T

Figure 5a: Open load: detection in ON-state, open

load occurs in on-state

IN2 channel 2: normal operation

OUT1

t

V

ST

IN1

I

L1

t

d(ST OL1)

t

d(ST OL2)

t

d(ST OL1)

t

d(ST OL2)

open

load

open

load

normal

load

channel 1:

td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ

Figure 5b: Open load: detection in ON-state, turn

on/off to open load

OUT1

t

V

ST

IN1

I

L1

t

d(ST)

t

d(ST OL4)

t

d(ST)

t

d(ST OL5)

IN2 channel 2: normal operation

channel 1: open load

Figure 5c: Open load: detection in ON- and OFF-state

(with REXT), turn on/off to open load

t

V

ST

IN1

I

L1

t

d(ST)

d(ST OL5)

channel 1: open load

t

d(ST)

t

OUT1

IN2 channel 2: normal operation

td(ST OL5) depends on external circuitry because of high

impedance

BTS621L1

Data Sheet 13 2013-10-11

Figure 6a: Undervoltage:

IN

V

OUT

t

V

bb

ST open drain

V

bb(under)

bb(u rst)

bb(u cp)

V

Figure 6b: Undervoltage restart of charge pump

bb(under)

V

bb(u rst)

V

bb(over)

V

bb(o rst)

V

bb(u cp)

off-state

on-state

V

ON(CL)

V

bb

V

on

off-state

charge pump starts at Vbb(ucp) =5.6 V typ.

Figure 7a: Overvoltage:

IN

V

OUT

t

V

bb

ST

ON(CL)

V

bb(over)

V

bb(o rst)

BTS621L1

Data Sheet 14 2013-10-11

Package and Ordering Code

All dimensions in mm

PG-TO263-7-2 Ordering code

BTS621L1 E3128A

SP001104826

Published by

Infineon Technologies AG,

D-81726 München

The information herein is given to describe certain

components and shall not be considered as a guarantee of

characteristics.

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