Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
V
orläufi
g
Preliminar
y
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage Tvj =25°C VRRM 1600 V
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip TC =80°C IFRMSM 25 A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output TC =80°C IRMSmax 36 A
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C IFSM 196 A
surge forward current tP = 10 ms, Tvj = 150°C 158 A
Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t192 A2s
I2t - value tP = 10 ms, Tvj = 150°C 125 A2s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage Tvj =25°C VCES 1200 V
Kollektor-Dauergleichstrom TC = 80°C IC,nom. 10 A
DC-collector current TC = 25 °C IC15 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC =80°C ICRM 20 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 55 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current IF10 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 20 A
Grenzlastintegral
I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t20 A2s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage Tvj =25°C VCES 1200 V
Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 10 A
DC-collector current TC = 25 °C IC15 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 20 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 55 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current IF10 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 20 A
prepared by: Thomas Passe date of publication: 2002-02-14
approved by: Ingo Graf revision: 6
1(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, IF = 10 A VF- 0,95 - V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - 0,78 V
Ersatzwiderstand
slope resistance Tvj = 150°C rT-17 mW
Sperrstrom
reverse current Tvj = 150°C, VR = 1600 V IR-5-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA'+CC' - 11 - mW
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10 A VCE sat - 1,9 2,45 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10 A - 2,3 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,3mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 0,6 - nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 100 Ohm td,on -52-ns
VGE = ±15V, Tvj = 125°C, RG = 100 Ohm - 50 - ns
Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 100 Ohm tr-20-ns
VGE = ±15V, Tvj = 125°C, RG = 100 Ohm - 30 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 100 Ohm td,off - 292 - ns
VGE = ±15V, Tvj = 125°C, RG = 100 Ohm - 391 - ns
Fallzeit (induktive Last) IC = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 100 Ohm tf-65-ns
VGE = ±15V, Tvj = 125°C, RG = 100 Ohm - 90 - ns
Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 100 Ohm Eon - 1,42 - mWs
LS = 80 nH
Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 100 Ohm Eoff - 1,22 - mWs
LS = 80 nH
Kurzschlußverhalten tP £ 10µs, VGE £ 15V, RG = 100 Ohm
SC Data Tvj£125°C, VCC =720 V ISC -40- A
-mA
ICES - 5,0
VGE = 0V, Tvj =125°C, VCE = 1200V
2(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module LsCE - - 40 nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RCC'+EE' - 14 - mW
Diode Wechselrichter/ Diode Inverter min. typ. max.
Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 10 A VF- 1,7 2,1 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 10 A - 1,7 - V
Rückstromspitze IF=INenn, - diF/dt = 550 A/us
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V IRM -14- A
VGE = -10V, Tvj = 125°C, VR = 600 V - 15 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 550 A/us
recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr- 1 - µAs
VGE = -10V, Tvj = 125°C, VR = 600 V - 1,8 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 550 A/us
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V Erec - 0,26 - mWs
VGE = -10V, Tvj = 125°C, VR = 600 V - 0,56 - mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10,0 A VCE sat - 1,9 2,45 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10,0 A - 2,3 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,3mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 0,6 - nF
Kollektor-Emitter Reststrom - 5,0 - mA
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA
Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.
Durchlaßspannung Tvj = 25°C, IF = 10,0 A VF- 1,8 2,3 V
forward voltage Tvj = 125°C, IF = 10,0 A - 1,85 - V
NTC-Widerstand/ NTC-Thermistor min. typ. max.
Nennwiderstand
rated resistance TC = 25°C R25 -5-
kW
Abweichung von R100
deviation of R100 TC = 100°C, R100 = 493 WDR/R -5 5 %
Verlustleistung
power dissipation TC = 25°C P25 20 mW
B-Wert
B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
VGE = 0V, Tvj = 125°C, VCE = 1200V
3(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
Thermische Eigenschaften / Thermal properties
min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH - 1,9 - K/W
thermal resistance, junction to heatsink Trans. Wechsr./ Trans. Inverter lgrease=1W/m*K - 2,6 - K/W
Diode Wechsr./ Diode Inverter - 3,7 - K/W
Trans. Bremse/ Trans. Brake - 2,6 - K/W
Diode Bremse/ Diode Brake - 4,0 - K/W
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1,9 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 2,2 K/W
Diode Wechsr./ Diode Inverter - - 2,7 K/W
Trans. Bremse/ Trans. Brake - - 2,2 K/W
Diode Bremse/ Diode Brake - - 2,9 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,2 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter lgrease=1W/m*K - 0,6 - K/W
Diode Wechsr./ Diode Inverter - 1,3 - K/W
Trans. Bremse/ Trans. Brake - 0,6 - K/W
Diode Bremse/ Diode Brake - 1,4 - K/W
Höchstzulässi
g
e Sperrschichttemperatur
maximum junction temperature Tvj - - 150 °C
Betriebstemperatur
operation temperature Top -40 - 125 °C
La
g
ertemperatur
storage temperature Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation Al2O3
CTI
comperative tracking index 225
Anpreßkraft f. mech. Befestigung pro Feder F N
mounting force per clamp
Gewicht
weight G36g
Kriechstrecke
creeping distance 13,5 mm
Luftstrecke
clearance 12 mm
Kriechstrecke
creeping distance 7,5 mm
Luftstrecke
clearance 7,5 mm
Terminal - Terminal
terminal to terminal
40...80
Kontakt - Kühlkörper
terminal to heatsink
4(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
IC [A]
VCE [V]
IC [A]
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical)
VGE = 15 V
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50
9V
11V
13V
15V
17V
19V
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical)
Tvj = 125°C
5(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
IC [A]
VGE [V]
IF [A]
VF [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)
Forward characteristic of FWD Inverter (typical)
0
2
4
6
8
10
12
14
16
18
20
6 7 8 9 10 11 12
Tj = 25°C
Tj = 125°C
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
Transfer characteristic Inverter (typical)
VCE = 20 V
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3
Tj = 25°C
Tj = 125°C
6(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
600 V
100 Ohm
E [mWs]
IC [A]
600 V
E [mWs]
RG [W]
Schaltverluste Wechselr. (typisch) E
on = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff =
0
0,5
1
1,5
2
2,5
3
100 120 140 160 180 200 220
Eon
Eoff
Erec
Schaltverluste Wechselr. (typisch) E
on = f (RG), Eoff = f (RG), Erec = f (RG)
Switching losses Inverter (typical)
Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
0 5 10 15 20 25
Eon
Eoff
Erec
7(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
ZthJH [K/W]
t [s]
100 Ohm
IC [A]
VCE [V]
Transienter Wärmewiderstand Wechselr. ZthJH = f (t)
Transient thermal impedance Inverter
0,100
1,000
10,000
0,001 0,01 0,1 1 10
Zth-IGBT
Zth-FWD
i 1 2 3 4
IGBT: ri [K/W]: 169,8e-3 850,1e-3 667,8e-3 912,3e-3
ti [s]: 3e-6 78,7e-3 10,1e-3 225,6e-3
FWD: ri [K/W]: 245,4e-3 1,22 956,8e-3 1,27
ti [s]: 3e-6 80,4e-3 10,35e-3 227,3e-3
Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)
Reverse bias save operating area Inverter (RBSOA)
Tvj = 125°C, VGE = ±15V, RG =
IC,Chip
0
5
10
15
20
25
0 200 400 600 800 1000 1200 1400
8(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
IC [A]
VCE [V]
IF [A]
VF [V]
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50
Tj = 25°C
Tj = 125°C
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)
Output characteristic brake-chopper-IGBT (typical)
VGE = 15 V
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3 3,5
Tj = 25°C
Tj = 125°C
9(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
IF [A]
VF [V]
R[W]
TC [°C]
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
Forward characteristic of Rectifier Diode (typical)
0
2
4
6
8
10
12
14
16
18
20
0 0,2 0,4 0,6 0,8 1 1,2
Tj = 25°C
Tj = 150°C
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
Rtyp
100
1000
10000
100000
0 20 40 60 80 100 120 140
10(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Vorläufig
Preliminary
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
J
Bohrplan /
drilling layout
11(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FP10R12KE3
Gehäuseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
12(12)
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