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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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2N5088
2N5089 MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Colle ctor-Emitter Voltage 2N5088
2N5089 30
25 V
V
VCBO Collector-Base Voltage 2N5088
2N5089 35
30 V
V
VEBO Emitter-Base Voltage 4.5 V
ICCollector Current - Continuous 100 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5088
2N5089 *MMBT5088
*MMBT5089
PDTotal Device Dissipatio n
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resista nce, Junction t o Case 83.3 °C/W
RθJ
A
Thermal Re sistance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088/2N5089/MMBT5088/MMBT5089, Rev A
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088
5089
IC = 1.0 mA , V CE = 5.0 V 5088
5089
IC = 10 mA , V CE = 5.0 V* 5088
5089
300
400
350
450
300
400
900
1200
VCE(sat)Collector-E mitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
VBE(on)Base-Emitter O n Voltage IC = 10 m A , V CE = 5.0 V 0.8 V
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO Collector-E mitter Breakdown
Voltage* IC = 1.0 mA, IB = 0 5088
5089 30
25 V
V
V(BR)CBO Collector-B as e Break down Voltage IC = 100 µA, IE = 0 5088
5089 35
30 V
V
ICBO Collector Cut off Current VCB = 20 V, IE = 0 5088
VCB = 15 V, IE = 0 5089 50
50 nA
nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0 50
100 nA
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.1 1 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.91 1f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
fTCurrent Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 m A ,
f = 20 MHz 50 MHz
Ccb Collector-Bas e Capacitance VCB = 5.0 V, IE = 0, f = 100 k Hz 4.0 pF
Ceb Em it t er-B as e Capac it ance VBE = 0.5 V, I C = 0, f = 100 kHz 10 pF
hfe Sm all-S ignal Current Gain IC = 1.0 mA, V CE = 5. 0 V , 5088
f = 1.0 kHz 5089 350
450 1400
1800
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088
RS = 10 kΩ,5089
f = 10 Hz to 15.7 kHz
3.0
2.0 dB
dB
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Co llector-E mitter Sa turati on
Volta ge vs C ol lector Cur rent
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - CO LL ECTOR CURRE NT (mA)
V - COLLEC TO R-EM ITTER VO LTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β = 10
Base- Emitter Saturati on
Voltage vs Col lect or Cu r rent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - CO LL ECTO R CURRE NT (mA)
V - CO LLEC TOR-EMITT ER VO LTAGE (V)
C
BESAT
β = 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - COLLEC T O R CURRENT ( m A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Typical Pu ls ed C ur r e nt Ga in
vs Co ll ect or Current
0.01 0.03 0.1 0.3 1 3 10 30 100
0
200
400
600
800
1000
1200
I - COLLEC TOR CURRENT ( mA)
h - TYPI CAL PUL SED CUR REN T G AI N
C
FE
125 °C
25 °C
- 4 0 °C
V = 5.0 V
CE
C o ll ector-C u to ff Cu r rent
vs A mbient Temper atu re
25 50 75 100 125 150
0.1
1
10
T - AMBIENT TEMP E RATURE ( C)
I - COLLE CTOR CURR ENT (nA)
A
CBO
V = 45V
°
CB
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Inp ut and Output Capacitance
vs Reverse Bias Voltage
048121620
0
1
2
3
4
5
REVERSE B IAS VOLT AGE (V)
CAPACITAN CE (pF)
f = 1.0 MH z
Cob
C
te
Wide band Nois e Fre que ncy
vs Source Resistanc e
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N F - NO IS E F IGU RE (d B)
V = 5.0 V
BA NDW IDTH = 15 .7 kHz
CE
I = 10 µA
C
I = 100 µA
C
SΩ
I = 30 µA
C
Contours of Constant Gain
B andwi dt h P r oduc t (f )
0.1 1 10 100
1
2
3
5
7
10
I - COLLECTO R CURRE NT (m A)
V - COLLECTOR VOLTAGE (V)
C
17 5 MHz
T
CE
15 0 MHz
12 5 MHz
75 MHz
10 0 MHz
Powe r Dis sipati on vs
Ambient Temperature
0 25 50 75 100 125 150
0
125
250
375
500
625
TEMPERATURE ( C)
P - POWER DISSIPAT ION (mW)
D
o
TO-92
SOT-23
Noise F ig ure vs Frequency
0.0001 0.001 0.01 0.1 1 10 100
0
2
4
6
8
10
f - FREQUE NC Y (MHz )
N F - NOIS E FIGURE (d B)
V = 5. 0V
CE
I = 200 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 500 Ω
C
S
I = 100 µA,
R = 10 kΩ
C
S
I = 1.0 mA ,
R = 5 . 0 kΩ
CS
No rmal ized Col lecto r-Cutoff C urren t
vs A mbient Temp eratu re
25 50 75 100 125 150
1
10
100
1000
T - AMBIENT TEMP ERATURE ( C)
CH AR AC TER ISTIC S R ELATI VE TO VALU E AT T = 25 C
A
A
°
°
Typical Characteristics (continued)
Contour s of C o nst a n t
Narrow Band Noise Figure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLEC TO R CURRE NT ( A)
R - SOURCE RESISTANCE ( )
µ
C
Ω
S
V = 5.0 V
f = 1.0 kHz
BANDWI DT H
= 200 Hz
CE
6. 0 dB
3. 0 dB
4. 0 dB
8. 0 dB
2. 0 dB
Cont ours of Const a nt
Narrow Band Noise Figure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - CO LLECTOR CUR RENT ( A)
R - SOU RCE RESI STANC E ( )
µ
C
Ω
S
V = 5.0 V
f = 1 00 Hz
BANDWIDTH
= 20 Hz
CE
3. 0 dB
4. 0 dB
8. 0 dB
10 dB
12 dB
14 dB
6. 0 dB
Contours of Cons tant
Nar r ow Band Nois e Figu r e
1 10 100 1000
100
200
500
1000
2000
5000
10000
I - COLL ECTO R CURRENT ( A )
R - SOURCE RESISTANCE ( )
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kH z
BANDWIDTH
= 2. 0k Hz
CE
Ω
S
µ
Contours of Constant
Na rrow Band Noise Figure
0.01 0.1 1 10
100
200
500
1000
2000
5000
10000
I - CO LLECTO R CU RRE NT ( A)
R - SOURCE RESISTAN CE ( )
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
Ω
S
µ
f = 1.0 MHz
BANDWIDTH
= 200kHz
6.0
dB
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
3
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Typical Common Emitter Characteristics (f = 1.0 kHz)
NPN General Purpose Amplifier
(continued)
Typical Common Emit ter Characteristi cs
0.1 0.2 0.5 1 2 5 10 20 50 100
0.01
0.1
1
10
100
I - CO LLECTO R CURRE NT (m A)
CHARACT ERIS TI CS RELA TIVE T O VA L UE ( I =1m A)
C
C
f = 1. 0kHz hoe
hoe
h and h
ie
hfe
hre
h ie h fe
re
Typical Common Emi tter Characteristi cs
-100 -50 0 50 100 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEM P ERATURE ( C)
CHARACTE RISTICS RELATIVE TO VALUE(T =25 C)
J
A
°
h oe
h re h ie
h fe
h oe
h re
h ie
h fe
V = 5 .0V
f = 1.0kHz
I = 1 .0 m A
CE
C
°
Typ ical C o mmo n Emi t ter Ch aracterist ics
0 5 10 15 20 25
0.8
0.9
1
1.1
1.2
1.3
1.4
V - COLLEC TOR VOLTAGE (V)
C H AR AC TER ISTI CS R EL ATI VE TO VALU E( V = 5V)
CE
CE
I = 1.0mA
f = 1. 0kHz
T = 25 C
C
A°
h oe
h oe
h re
h ie
h fe
h re
h ie
h fe
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