BC 856W ... BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP 20.1 10.1 Type Code 1 1.250.1 3 2.10.1 0.3 Power dissipation - Verlustleistung 200 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 2 PNP 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 856W BC 857W BC 860W BC 858W BC 859W Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V Collector-Base-voltage E open - VCB0 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 200 mW 1) Collector current - Kollektorstrom (DC) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom IEM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 5 V, - IC = 10 :A hFE typ. 90 typ. 150 typ. 270 - VCE = 5 V, - IC = 2 mA hFE 110...220 200...450 420...800 typ. 220 typ. 330 typ. 600 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz Small signal current gain - Stromverstarkung hfe 1 Input impedance - Eingangs-Impedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance - Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsruckwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 16 01.11.2003 General Purpose Transistors BC 856W ... BC 860W Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. - Kollektor-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA -VCEsat - 75 mV 300 mV - IC = 100 mA, - IB = 5 mA -VCEsat - 250 mV 600 mV Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - VBEsat - 700 mV - - IC = 100 mA, - IB = 5 mA - VBEsat - 850 mV - - VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV - VCE = 5 V, - IC = 10 mA - VBEon - - 820 mV IE = 0, - VCB = 30 V - ICB0 - - 15 nA IE = 0, - VCB = 30 V, Tj = 150/C - ICB0 - - 4 :A - IEB0 - - 100 nA 100 MHz - - - 10 pF 12 pF BC 856W... F BC 858W - - 10 dB BC 859W... BC860W - - 4 dB Base-Emitter voltage - Basis-Emitter-Spannung 1) Collector-Base cutoff current - Kollektorreststrom Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 30...15 kHz BC 859W F - - 4 dB BC 860W F - - 4 dB Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ 620 K/W 2) RthA BC 846W ... BC 850W BC 856AW = 3A BC 856BW = 3B BC 857AW = 3E BC 857BW = 3F BC 857CW = 3G BC 858AW = 3J BC 858BW = 3K BC 858CW = 3L BC 859BW = 4B BC 859CW = 4C BC 860BW = 4F BC 860CW = 4G ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 17