1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
16 01.11.2003
12
3
Type
Code
2.1
±0.1
2
±0.1
1
±0.1
1.25
±0. 1
0.3
1.3
BC 856W ... BC 860W General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 200 mW
Plastic case SOT-323
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V
Collector-Base-voltage E open - VCB0 80 V 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 200 mW 1)
Collector current – Kollektorstrom (DC) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 :Ah
FE typ. 90 typ. 150 typ. 270
- VCE = 5 V, - IC = 2 mA hFE 110...220 200...450 420...800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung hfe typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz hie 1.6...4.5 kS3.2...8.5 kS6...15 kS
Output admittance – Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
17
01.11.2003
General Purpose Transistors BC 856W ... BC 860W
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA -VCEsat – 75 mV 300 mV
- IC = 100 mA, - IB = 5 mA -VCEsat – 250 mV 600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA - VBEsat – 700 mV –
- IC = 100 mA, - IB = 5 mA - VBEsat – 850 mV –
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV
- VCE = 5 V, - IC = 10 mA - VBEon – – 820 mV
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V - ICB0 – – 15 nA
IE = 0, - VCB = 30 V, Tj = 150/C- I
CB0 ––4 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V - IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 10 pF 12 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
BC 856W...
BC 858W F – – 10 dB
BC 859W...
BC860W – – 4 dB
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 30...15 kHz
BC 859W F – – 4 dB
BC 860W F – – 4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 620 K/W 2)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC 846W ... BC 850W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 856AW = 3A BC 856BW = 3B
BC 857AW = 3E BC 857BW = 3F BC 857CW = 3G
BC 858AW = 3J BC 858BW = 3K BC 858CW = 3L
BC 859BW = 4B BC 859CW = 4C
BC 860BW = 4F BC 860CW = 4G
