DATA SH EET
Product specification
Supersedes data of 1999 Apr 15 2004 Jan 13
DISCRETE SEMICONDUCTORS
BSR15; BSR16
PNP switching transistors
2004 Jan 13 2
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
FEATURES
High current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Medium power switching.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: BSR13 and BSR14.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BSR15 T7*
BSR16 T8*
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BSR15 plastic surface mounted package; 3 leads SOT23
BSR16
2004 Jan 13 3
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−60 V
VCEO collector-emitter voltage open base
BSR15 −−40 V
BSR16 −−60 V
VEBO emitter-base voltage open collector −−5V
ICcollector current (DC) −−600 mA
ICM peak collector current −−800 mA
IBM peak base current −−200 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 13 4
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
BSR15 IE= 0; VCB =50 V −−20 nA
IE= 0; VCB =50 V; Tj= 150 °C−−20 µA
collector cut-off current
BSR16 IE= 0; VCB =50 V −−10 nA
IE= 0; VCB =50 V; Tj= 150 °C−−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−50 nA
hFE DC current gain IC=0.1 mA; VCE =10 V
BSR15 35
BSR16 75
DC current gain IC=1 mA; VCE =10 V
BSR15 50
BSR16 100
DC current gain IC=10 mA; VCE =10 V
BSR15 75
BSR16 100
DC current gain IC=150 mA; VCE =10 V; note 1 100 300
DC current gain IC=500 mA; VCE =10 V; note 1
BSR15 30
BSR16 50
VCEsat collector-emitter saturation
voltage IC=150 mA; IB=15 mA −−400 mV
IC=500 mA; IB=50 mA −−1.6 V
VBEsat base-emitter saturation voltage IC=150 mA; IB=15 mA −−1.3 V
IC=500 mA; IB=50 mA −−2.6 V
Cccollector capacitance IE=i
e= 0; VCB =10 V; f = 1 MHz 8pF
Ceemitter capacitance IC=i
c= 0; VEB =2 V; f = 1 MHz 30 pF
fTtransition frequency IC=50 mA; VCE =20 V; f = 100 MHz 200 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon =150 mA; IBon =15 mA;
IBoff =15mA 40 ns
tddelay time 12 ns
trrise time 30 ns
toff turn-off time 365 ns
tsstorage time 300 ns
tffall time 65 ns
2004 Jan 13 5
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
Fig.2 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
Vi
VCC
Vi=9.5 V; T = 500 µs; tp=10 µs; tr=t
f3 ns.
R1 = 68 ; R2 = 325 ; RB= 325 ; RC= 160 .
VBB = 3.5 V; VCC =29.5 V.
Oscilloscope: input impedance Zi=50.
2004 Jan 13 6
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2004 Jan 13 7
Philips Semiconductors Product specification
PNP switching transistors BSR15; BSR16
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Contact information
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Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document order number: 9397 750 12421