HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002. 03.04
Page No. : 1/3
HTIP41C HSMC Produc t Specification
HTIP41C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP41C is designed for use in general purpose amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper atur e............................................................................................ -55 ~ +150 °C
Junction Temper ature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 65 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
IC Collector Current............................................................................................................... 6 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE= 0
BVCEO 100 - - V IC=30mA, IB=0
ICES - - 400 uA VCE=100V, IB=0
ICEO - - 700 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V, IC=0
*VCE(sat) - - 1.5 V IC=6A, IB=600mA
*VBE(on) - - 2 V IC=6A, VCE=4V
*hFE1 30 - - IC=0.3A, VCE= 4V
*hFE2 15 - 75 IC=3A, VCE=4V
fT 3 - - MHZ VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank A B
hFE2 15-50 40-75
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002. 03.04
Page No. : 2/3
HTIP41C HSMC Produc t Specification
Characteristics Curve
Current G ain & Col lect or Current
10
100
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
hFE
hFE @ V
CE
=4V
25
o
C75
o
C
125
o
C
Satura tion Voltage & Collector Cur rent
10
100
1000
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
Sat u r ation Volt ag e (m V)
V
CE(sat)
@I
C
=10I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1 10 100 1000 10000
Colle cto r Current-I
C
(mA)
ON Voltage (mV
)
V
BE(ON)
@ V
CE
=4V
25
o
C
75
o
C125
o
C
Switching Time & Collector Current
0.01
0.1
1
10
0.1 1.0 10.0
Coll e c tor Cur rent (A)
Switing Times (us
)
Ton
Tstg
Tf
Capacit ance Reverse- Biased Vol t age
10
100
1000
0.1 1 10 100
R evers e- Biased Vol tage (V)
Capacitan ce ( p F)
Cob
Safe Oper atin g Area
1
10
100
1000
10000
100000
1 10 100
Forward Vol tage-V
CE
(V)
Collector Current-I
C
(mA)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002. 03.04
Page No. : 3/3
HTIP41C HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 A l l oy; solder pl ating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
H
4TIP
1C Rank
