TOSHIBA 2SA1987 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA1987 POWER AMPLIFIER APPLICATIONS @ High Collector Voltage : VcRQ= 230V (Min.) @ Complementary to 25C5359 @ Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 20.5MAX. 33402 > 2 ca N pom es . 26.0405 t va oe] 2 q a 3.0 7 20.04 0.6 MAXIMUM RATINGS (Tc = 25C) 107025 I | | 5.45 +0.15 5.45 0.15 CHARACTERISTIC SYMBOL | RATING UNIT no AT zt Collector-Base Voltage VCBO 230 V 3 ol Collector-Emitter Voltage VCEO 230 Vv ops \ Emitter-Base Voltage VEBO 5 Vv 123 | Collector Current Ic 15 A 1. BASE Base Current Ip 1.5 A 2. COLLECTOR (HEAT SINK) Fact pati 3. EMITTER Collector Power Dissipation Po 130 Ww (Te= 25C) JEDEC Junction Temperature Tj 150 C JEITA _ Storage Temperature Range Tstg 55~150 Cc TOSHIBA 9 21F1A ELECTRICAL CHARACTERISTICS (Tc = 25C) Weight : 9.75g (Typ.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo VcB= 280V, Iz=0 5.0] uA Emitter Cut-off Current IEBO VEB= 5V, Ic =0 5.0] uA Collector-Emitter Breakdown Voltage VBR) CEO|!= 50mA, Ip=0 230) i Vv FE (1) VcE= 5V, Ic=-1A 55] 160 DC Current Gain (Note) CE C _ hE (2) |VCE=5V, Ic=-74 35] 70[ Collector-Emitter Saturation Voltage VCE (sat) |IC=8A, Ip=0.84 | 18] 3.0) V Base-Emitter Voltage VBE VcE=5V, Ic=-7A -10) -15] V Transition Frequency fr VcE=5V, IG=-1A 30| | MHz Collector Output Capacitance | Cob VcB=10V, In=0, f=1MHz 360} pF (Note) hrm (1) Classification R : 55~110, O : 80~160 2001-10-29